Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Arterial patterns in the thoracic and abdominal segments of the esophagus: anatomy and clinical significance (1999)
    Springer
    Surgical and radiologic anatomy 20 (1999), S. 399-402 
    Details
    ISSN: 1279-8517
    Keywords: Esophageal artery ; Esophageal anatomy ; Semicircular esophageal artery ; Cadaver
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Cadaver studies were made to obtain more details about the arterial patterns in the thoracic and abdominal segments of the esophagus, with emphasis on the arterial supply to the lower esophageal sphincter (LES). The results showed that the inferior thoracic segment of the esophagus usually received blood supply from a single artery, with an average diameter of 1.42 ± 0.49 mm (X ± s), whereas the abdominal segment was commonly supplied by two arteries. The abdominal esophageal arteries coming from the left gastric artery were semi-circular in shape with an average diameter of 2.06 ± 0.70 mm. From these semi-circular esophageal arteries, 3 to 8 smaller arteries branched off and penetrated into the muscle of the abdominal segment of the esophagus or anastomosed with arterial branches from the inferior thoracic segment. Thus, the blood supply of the abdominal segment was richer than that of the inferior thoracic segment. This richness of blood supply, characterized by semicircular esophageal arteries in the abdominal segment, may be important for the function of the LES.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s00276-998-0399-1
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Acetate enhances solvent production and prevents degeneration in Clostridium beijerinckii BA101 (1999)
    Springer
    Applied microbiology and biotechnology 52 (1999), S. 170-173 
    Details
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract Addition of sodium acetate to chemically defined MP2 medium was found to increase and stabilize solvent production by Clostridium beijerinckii BA101, a solvent-hyperproducing mutant derived from C. beijerinckii NCIMB 8052. C. beijerinckii BA101 demonstrated a greater increase in solvent production than C. beijerinckii NCIMB 8052 when sodium acetate was added to MP2 medium. In 1-l batch fermentations, C. beijerinckii BA101 produced 32.6 g/l total solvents, with butanol at 20.9 g/l, when grown in MP2 medium containing 60 mM sodium acetate and 8% glucose. To our knowledge, these values represent the highest solvent and butanol concentrations produced by a solventogenic Clostridium strain when grown in batch culture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002530051504
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Helicobacter pylori clearance and serum gastrin and pepsinogen I concentrations in omeprazole treatment of duodenal ulcer patients (1999)
    Springer
    European journal of clinical pharmacology 54 (1999), S. 817-820 
    Details
    ISSN: 1432-1041
    Keywords: Key words Gastrin ; Pepsinogen I ; Duodenal ulcer ; Omeprazole ; Helicobacter pylori
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Abstract Objective: To determine which demographic factors may influence serum gastrin and pepsinogen I (PGI) levels in duodenal ulcer patients undergoing omeprazole treatment. Methods: We conducted an outpatient-based prospective study in the Veterans General Hospital, Taipei, to investigate the pharmacological effects on patients with duodenal ulcers receiving omeprazole treatment for 4 weeks. Sixty-eight patients (61 males/7 females, aged 25–73 years) with endoscopically confirmed duodenal ulcer were included. Gastrin and pepsinogen I levels were measured before and after treatment. Demographic factors including age, sex, smoking, ulcer healing and antral Helicobacter pylori colonization/clearance were analyzed, in order to measure their probable influences on serum gastrin and pepsinogen I levels. Results: Ulcer healing was seen in 92.6% of patients while 48 (70.6%) antral clearances were seen in 66 H. pylori colonized patients at the end of trial. Omeprazole monotherapy led to a marked elevation of serum gastrin (85.8 pg · ml−1, SD 32.0 pg · ml−1 vs 133.9 pg · ml−1, SD 71.6 pg · ml−1, P 〈 0.01), and pepsinogen I (111.0 ng · ml−1, SD 36.7 ng · ml−1 vs 253.6 ng · ml−1, SD 64.8 ng · ml−1, P 〈 0.01) levels when measured on day 29. Only patients showing antral H. pylori clearance exhibited an influence on the magnitude of pepsinogen I elevation following omeprazole monotherapy (143.9%, SD 67.3% vs 78.6%, SD 51.2%, P 〈 0.01). Moreover, the sensitivity and specificity of serum pepsinogen I variations were plotted on a receiving operating characteristic (ROC) curve. The 140% increased pepsinogen I level yielded a maximum accuracy of 80% specificity or 50% sensitivity to predict antral H. pylori clearance. Conclusion: Antral H. pylori clearance is at least partially responsible for the omeprzaole-induced hyperpepsinogenemia I. The magnitude of hyperpepsinogenemia I probably provides a non-invasive alternative for predicting H. pylori clearance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002280050559
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Congenital hypothyroidism with multiple ovarian cysts (1999)
    Springer
    European journal of pediatrics 158 (1999), S. 851-852 
    Details
    ISSN: 1432-1076
    Keywords: Key words Congenital hypothyroidism ; Multicystic ovaries ; Precocious puberty ; Premature thelarche
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract A case of ectopic thyroid with congenital hypothyroidism presenting with bilateral multicystic ovaries without marked precocious puberty is reported. The cystic ovaries disappeared dramatically after thyroid hormone therapy. Conclusion When ovarian cysts are found in prepubescent females, the possibility of associated hypothyroidism should be considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004310051221
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Percolative phase separation underlies colossal magnetoresistance in mixed-valent manganites (1999)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 399 (1999), S. 560-563 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Colossal magnetoresistance—an unusually large change of resistivity observed in certain materials following application of magnetic field—has been extensively researched in ferromagnetic perovskite manganites. But it remains unclear why the magnetoresistive response increases ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/21142
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Effect of chloride on the photoluminescence of ZnS:Mn thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4154-4159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS:Mn thin films at various substrate temperature are grown by halide transport chemical vapor deposition. These films show blue and red photoluminescence (PL) in addition to the typical yellow-orange emission. The manganese crystal environment is characterized by electron spin resonance (ESR) spectroscopy. A computer simulation of the ESR spectra is used to quantify the number of isolated manganese and the number of clustered manganese in the crystal lattice. These data reveal that the red emission occurs in films with low manganese concentration, and, therefore, occurs from a mechanism different than those previously posed. The activation energy for Mn incorporation is measured to be Ea=137 kJ/mol. From these data, a Mn–Cl defect pair is proposed as the red emission center. Self-activated blue emission in intentionally Cl-doped ZnS films is also demonstrated. Thus both red and blue PL in ZnS thin films result from chloride impurities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370324
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Thermoelectric characterization of Si thin films in silicon-on-insulator wafers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3204-3208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heat dissipation becomes an important issue for highly compacted integrated circuit chips because of device performance and reliability concerns. Thermoelectric cooling has been considered as one of the possible solutions for cooling high density, locally heated integrated circuits. It excels in scalability and reliability. In this study, the thermoelectric behavior of silicon thin films in silicon-on-insulator wafers has been investigated. We have designed a testing structure to measure Seebeck coefficient which is one of the most important thermoelectric parameters. In addition, a testing structure with platinum temperature sensors was built to measure Peltier cooling effects for the powered Si channels. We found that the implanted dopant concentration and postimplantation annealing play important roles on thermoelectric properties of the Si thin films. Also, an asymmetrical thermal behavior due to Peltier effect was observed for the implanted Si thin films, especially for samples annealed at lower temperatures. The thermoelectric power of the Si thin films could be improved by appropriate ion implantation and annealing processes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371190
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6895-6901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With continuing scaling down in microelectronic devices, the current density and the power consumption in the devices must increase. Hence, device reliability under high current density is an issue for ultralarge-scale integration technology. This study investigates the heating behavior of the heavily doped Si channels under high current stress. Thermal and electrical characterization of the channels in bulk Si and in silicon-on-insulator were conducted. An abnormal asymmetrical heating along the channels in bulk Si has been observed. We propose a junction leakage mechanism to explain the phenomenon observed. Other asymmetrical thermal effects, such as electron–hole recombination and Peltier effect, have also been discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371769
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5850-5857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we discuss parameters influencing (a) the properties of thin AlxGa1−xN layers grown by metalorganic chemical vapor deposition and (b) the electrical properties of the two-dimensional electron gas (2DEG) forming at the AlxGa1−xN/GaN heterojunction. For xAl〉0.3, the AlxGa1−xN layers showed a strong tendency towards defect formation and transition into an island growth mode. Atomically smooth, coherently strained AlxGa1−xN layers were obtained under conditions that ensured a high surface mobility of adsorbed metal species during growth. The electron mobility of the 2DEG formed at the AlxGa1−xN/GaN interface strongly decreased with increasing aluminum mole fraction in the AlxGa1−xN layer and increasing interface roughness, as evaluated by atomic force microscopy of the surfaces prior to AlxGa1−xN deposition. In the case of modulation doped structures (GaN/AlxGa1−xN/AlxGa1−xN:Si/AlxGa1−xN), the electron mobility decreased with decreasing thickness of the undoped spacer layer and increasing silicon doping. The electron mobility was only moderately affected by the dislocation density in the films and independent of the growth temperature of the AlxGa1−xN layers at xAl=0.3. For Al0.3Ga0.7N/GaN heterojunctions, electron mobility values up to 1650 and 4400 cm2/V s were measured at 300 and 15 K, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371602
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 412-414 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Perovskite Ba0.5Sr0.5TiO3 thin films have been synthesized on (001) LaAlO3 substrates by pulsed laser ablation. Extensive x-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of 〈100〉BSTO//〈100〉LAO. Rutherford backscattering spectrometry studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield χmin of only 2.6%. The dielectric property measurements by the interdigital technique at 1 MHz show room-temperature values of the relative dielectric constant, cursive-epsilonr, and loss tangent, tan δ, of 1430 and 0.007 with no bias, and 960 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown Ba0.5Sr0.5TiO3 films can be used for development of room-temperature tunable microwave elements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124392
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...