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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 891-895 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of spacers in modulation-doped Zn1−xCdxSe/ZnSe:Cl multiple quantum wells (MD-MQWs) was investigated by photoluminescence (PL) and time-of-flight secondary-ion-mass spectrometry (TOF-SIMS). A comparison was made between structures with and without spacers as a function of annealing temperature. The diffusion of Cl and Cd was monitored by TOF-SIMS depth profiling and photoluminescence. Although TOF-SIMS does not show any significant diffusion of Cl and Cd in both structures at temperatures up to 385 °C, the PL results indicate the modification of optical properties in the Zn1−xCdxSe/ZnSe:Cl MD-MQWs due to annealing. Up to an annealing temperature of 385 °C, the MD-MQWs with spacers show superior optical quality in the quantum well regions, while quenching of the quantum well band-edge PL and strong enhancement of deep-level emission were observed from the MD-MQWs without spacers. This phenomenon suggests that the radiative deep-level emission may provide more efficient channel for electron–hole recombination with increasing annealing temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1730-1734 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The inversion problem of angle dependent chord integrals is theoretically studied and a rotating type optical probe is developed for its application. The proposed solution is computationally efficient and robust to measurement additive noise. The probe system constructed is tested in an inductively coupled plasma source by measuring a spectral line intensity of argon plasma. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2516-2519 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A frequency modulated interferometer is developed, which uses a 94 GHz Gunn oscillator and a single sideband (SSB) upconverter as a frequency modulator. An SSB upconverter makes it possible to use a heterodyne phase measurement technique with one mm-wave source. In addition, the influence of frequency drift and phase noise of a mm-wave source on the phase measurement can be reduced. In this work, the performance of a SSB upconverter as a frequency modulator is examined. Also, overall performance of the mm-wave interferometer with a SSB upconverter and line density measurement results in a mirror device are described. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1397-1401 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Korea Superconducting Tokamak Advanced Research (KSTAR) project is the Korean national fusion program for constructing a superconducting tokamak, that is capable of a steady-state operation. Currently, the KSTAR diagnostic group is concentrating on conceptual design activities to provide measurements of the plasma behavior that is necessary to satisfy the KSTAR missions. A diagnostic overview for the KSTAR device is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4115-4115 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To match the requirements for development of transformer cores with lower iron losses, many new materials are under development including amorphous materials, 6.5% Si–Fe sheets and thin gauged 3% Si–Fe sheets. Among these materials, the thin gauged 3% Si–Fe sheets are attracting attention due to their good magnetic properties and scientific interest. Arai et al. reported that the magnetic properties of the sheets were comparable to those of the amorphous materials and (110)[001] preferred orientation of the sheets are developed by tertiary recrystallization.1 The 100 μm thick 3% Si–Fe sheets were prepared via conventional metallurgical processes including melting and casting, hot rolling to 25 mmT at 1200 °C, first cold rolling to 0.5 mmT, intermediate annealing at 800 °C for 30 min, second cold rolling to 0.25 mmT, intermediate annealing at 800 °C for 30 min, final cold rolling to 100 μm and final annealing at 1200 °C for 1 h in a vacuum of 5×10−6 Torr. Among these processes, the cold rolling process is an important one because preferred orientation of the sheets was developed in the process. Nakano et al. reported that there was an optimum cold rolling ratio to get required magnetic properties of the sheets.2 Recently, we found that the reduction rate, i.e., number of passes, as well as reduction ratio affected the preferred orientation and magnetic properties of the sheets. The number of passes in the first cold rolling process was changed from 7 to 60 and B10 values of the final sheets were changed from 1.30 to 1.84 T according to the number of passes. From x-ray experiments, it was found that intensity of (110) peak in the cold rolled and annealed sheets strongly affected the magnetic properties of the final sheets. We will discuss the relationship between the reduction rate and preferred orientation, and magnetic properties of the thin gauged 3% Si–Fe sheets. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 237-243 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing incidence x-ray scattering and x-ray diffraction techniques have been employed to investigate the microstructures in various ZnSe-based semiconductor thin films grown on GaAs substrates by molecular beam epitaxy and metalorganic chemical vapor deposition methods. The results are also used for a comparison of the interfacial roughness and overall quality of the II–VI thin films prepared by these two different growth methods. Structural parameters such as the interfacial roughness and layer thickness obtained from the scattering measurements and lattice constants obtained from the x-ray diffraction pattern around the GaAs(004) peak can be correlated with the film deposition rate, compound composition, and lattice strain in the epilayers. We thus demonstrate that x-ray scattering techniques in conjunction with diffraction measurements are useful tools for nondestructive characterization of buried interfaces in semiconductor layer materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4994-4999 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen ions were implanted into ZnSxSe1−x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in a N2 ambient. Schottky structures employing the implanted p-type ZnSxSe1−x were fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current–voltage (I–V), current–voltage temperature (I–V–T), and high frequency capacitance–voltage (C–V) measurements. PL spectra showed a clear donor–acceptor pair (DAP) recombination at an energy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respectively, regardless of the postannealing temperatures. The diode conduction in forward bias proceeds by the combination of thermionic and tunneling emission. C–V measurement proved the maximum doping concentration to be around 1017 cm−3 after ion implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 698-700 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three photoluminescence (PL) bands at 340–370, 400–430, and 740 nm were observed at room temperature in a-Si:H:O films fabricated by plasma enhanced chemical vapor deposition without any postprocessing. The violet-blue emission is very strong and stable, and its intensity is closely related to the oxygen content in the films, which can be controlled by the applied dc biases on the sample substrates during deposition. The first two PL peaks are ascribed to Si–O related species, and the last one to the quantum size effect of the nanocrystallites embedded in the a-Si:H:O matrix. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract : Familial Alzheimer's disease (FAD) mutant forms of presenilin 1 (PS1) and 2 have been shown to sensitize cells to apoptotic cell death. Here we explore the effects of FAD mutant forms of PS1 on caspase activation during apoptosis. We show that caspase activation leads to increased generation of alternative C-terminal fragments (CTFs) from mutant as compared to wild-type (wt) PS1. For this purpose, very low expression levels of wt, A246E, L286V, and ΔE10 FAD mutant PS1 proteins in stably transfected human H4 neuroglioma cells were used to avoid artifactual induction of spontaneous apoptosis due to overexpression of PS1. Staurosporine treatment of these cells resulted in increased cell death and up to a 10-fold increase in caspase-3 activation in mutant versus wt PS1-expressing cell lines. Correspondingly, relative levels of caspase-cleaved PS1 CTFs were increased by five-to sixfold in the FAD mutant versus wt PS1 cells. Elevated caspase activation and caspase cleavage of FAD mutant PS1 suggest the possibility of either a direct proapoptotic effect of mutant PS1 or interference of mutant PS1 with antiapoptotic effects of wt PS1.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Fatigue & fracture of engineering materials & structures 22 (1999), S. 0 
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The object of this study is to establish a new test method for evaluating stress corrosion cracking (SCC) susceptibility of high-strength steel using a small punch (SP) test and acoustic emission (AE). A miniaturized specimen (10 × 10 × 0.5 mm) is adopted for SCC evaluation. The experiments are conducted at various loading rates and at various orientations of the specimen. The cumulative average amplitude of the AE signal per unit equivalent fracture strain (εqf ) increases as the SCC susceptibility increases. Through the load–displacement behaviour, the fracture energy (ESP ), the SEM fractographs, and the correlation between the SCC susceptibility and the AE characteristics, it is proved that the small punch test method combined with AE measurements is a useful method to evaluate the SCC susceptibility of high-strength steel.
    Type of Medium: Electronic Resource
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