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  • 2020-2023  (22)
  • 2000-2004  (303)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3009-3011 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (GaIn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (GaIn)(NAs)/GaAs at elevated carrier densities. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 7831-7838 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The optical near-field response of a three dimensional subwavelength aperture-semiconductor system is analyzed within a finite difference time domain scheme for Maxwell's and excitonic material equations. The analysis includes the field modification due to the high refractive index environment and the excitonic response to a near-field distribution. The resonant optical response is illustrated for anisotropic dipole transitions in quantum wells and the enhancement of the quadrupole transition in materials with dipole forbidden interband transitions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4131-4135 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a medium exhibiting extremely efficient light scattering properties: a liquid network formed in a porous silicon matrix. We find that the scattering efficiency depends strongly on the filling factor of the liquid in the pores, its dielectric constant, and the type of termination of the internal surface of the layer. The spectral dependence of the scattering length of photons evidences the fact that the phenomenon is governed by a Mie-type scattering mechanism. The mean free path of photons in this medium is found to be in the micrometer range. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3529-3532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropically nanostructured silicon layers exhibit a strong in-plane birefringence. Their optical anisotropy parameters are found to be extremely sensitive to the presence of dielectric substances inside of the pores. Polarization-resolved transmittance measurements provide an extremely sensitive tool to analyze the adsorption of various atoms and molecules in negligible quantities. A variation of the transmitted linearly polarized light intensity up to two orders of magnitude combined with a fast optical response in the range of seconds make these layers a good candidate for sensor applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: X-ray backlighting is a powerful tool for diagnosing a large variety of high-density phenomena. Traditional area backlighting techniques used at Nova and Omega cannot be extended efficiently to National Ignition Facility scale. New, more efficient backlighting sources and techniques are required and have begun to show promising results. These include a backlit-pinhole point-projection technique, pinhole and slit arrays, distributed polychromatic sources, and picket-fence backlighters. In parallel, there have been developments in improving the data signal-to-noise and, hence, quality by switching from film to charge-coupled-device-based recording media and by removing the fixed-pattern noise of microchannel-plate-based cameras. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1529-1533 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Measurements of the magnetic field noise and the spatial correlation of the noise were made in a typical laboratory environment using two three-axis fluxgate magnetometers. The magnitude of the magnetic field noise was found to be approximately 100 pT/Hz at 10 Hz with a correlation of 90% at a separation of 1 m between the two sensors. The correlation was significantly reduced from noise induced eddy currents near large metallic surfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 698-700 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Two static x-ray imagers (SXI) will be used to monitor beam pointing on all target shots in the National Ignition Facility. These pinhole-based instruments will provide time integrated two-dimensional images of target x-ray emissions in the energy range between 2 and 3 keV. These instruments are not DIM based and will view along dedicated lines of sight from near the top and bottom ports of the target chamber. Beams that miss or clip the hohlraum laser-entrance holes will produce x-ray emission on the ends of the hohlraum, indicating improper beam pointing and/or target positioning. The SXIs will also be used to quantify beam focusing and pointing by producing x-ray images of dedicated test targets irradiated by focused beams at precalculated positions. A proposed design is presented, along with supporting data from NOVA target experiments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4294-4299 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design procedure for and realization of microwave bandpass filters that use two direct-coupled cylindrical cavities. Use of rectangular-to-circular waveguide transitions scrounged from commercial waveguide variable attenuators solved two problems: how to mate the filters to our microwave system that used rectangular waveguide and how to realize filters cheaply and quickly that could be used at different frequencies by changing only a small number of easily fabricated parts. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4636-4642 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positive oxide charge (Qox) and the concentration of nonradiative recombination defects (Nit) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during electron injection. Qox and Nit decreased strongly due to electron injection. The observed effect is suggested to be inverse to the negative-bias-temperature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 7685-7696 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Molecular dynamics simulations were employed to investigate the dynamics of surface-induced (N2)n cluster fragmentation. The calculated translational and rotational state distributions of the monomer products of (N2)n clusters scattered off a hard surface indicate that the translational states follow a single Maxwell–Boltzmann distribution, whereas the rotational state distributions are best represented by a sum of two distinct Boltzmann distributions, in agreement with previous experimental findings obtained with a graphite surface. Analysis of the scattering dynamics provides insight into a molecular-level explanation for the differing behaviors of energy transfer to the translational and rotational modes of the monomer products. Our simulation results indicate that translational excitation of scattered products depends on the instantaneous cluster temperature at which the monomers evaporate. The obtention of two rotational distributions indicates that two rotational excitation mechanisms occur during the scattering event. The first mechanism is related to evaporation during cluster–surface impact of molecules lying at the outskirts of the cluster. The degree of rotational excitation of these molecules is shown to depend both on the degree of cluster heating during impact and on the degree of rotational hindrance imparted on a given molecule prior to evaporation. The second mechanism is related to evaporation of molecules that were caged within the interior of the cluster during surface impact. These molecules evaporate after the molecules lying at the outskirts with a degree of excitation that depends on the stabilized instantaneous cluster temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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