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  • 1
    Electronic Resource
    Electronic Resource
    Two-photon ionization of trimethylamine using KrF laser radiation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2728-2731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multiphoton ionization of a low-pressure (3×10−5 Torr) fill of trimethylamine using an electron-beam pumped KrF laser has been studied. A microwave resonator probe was used to measure the resultant free-electron density. The scaling of electron density with the square of the incident laser intensity was verified in the low flux limit. The electron production decreased significantly from the I2 scaling at laser fluxes exceeding 4 MW/cm2. These results are consistent with a simple two-photon model describing the interaction in the low flux limit and a saturation of the electron production in the high-flux limit. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361145
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  • 2
    Electronic Resource
    Electronic Resource
    Oxide precipitation at silicon grain boundaries (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen precipitates at various grain boundaries in crystalline silicon, formed after prolonged high temperature annealing, grow within a narrow size distribution. This narrow size distribution appears to depend on the specific grain boundary. On the basis of this observation a model is derived which is based on the energy balance between grain boundary energy, Si/SiO2 interface energy, and an additional term describing the energy of the ledges of the faceted precipitates. This model predicts an energy minimum for a defined size of the precipitates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118405
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  • 3
    Electronic Resource
    Electronic Resource
    Quantitative high resolution electron microscopy of III-V compounds: A fuzzy logic approach (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1763-1765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the study of interdiffusion phenomena in layered structures of III-V compounds by high resolution electron microscopy, contrast features in the micrographs can be correlated with the variation of the chemical composition of the crystals. For quantitative interpretation of the micrographs a fuzzy logic approach is adapted to extract chemical information. The linguistic variable "similarity of images'' is derived from the standard deviation (SD) of their difference patterns, which proved to be an appropriate measure. The approach developed is used to analyze simulated contrast tableaus of GaAs/P (As/P variation) and experimental micrographs of Al/GaAs (Al/Ga variation). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114375
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  • 4
    Electronic Resource
    Electronic Resource
    Radiative recombination in type-II GaSb/GaAs quantum dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 656-658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained GaSb quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix using molecular beam epitaxy. The dots are growing in a self-organized way on a GaAs(100) surface upon deposition of 1.2 nm GaSb followed by a GaAs cap layer. Plan-view transmission electron microscopy studies reveal well developed rectangular-shaped GaSb islands with a lateral extension of ∼20 nm. Intense photoluminescence (PL) is observed at an energy lower than the GaSb wetting layer luminescence. This line is attributed to radiative recombination of 0D holes located in the GaSb dots and electrons located in the surrounding regions. The GaSb quantum dot PL dominates the spectrum up to high excitation densities and up to room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115193
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  • 5
    Electronic Resource
    Electronic Resource
    The contribution of vacancies to carbon out-diffusion in silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 392-394 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of carbon is mostly assumed to be governed by carbon interstitials via the kick-out mechanism. Carbon in-diffusion experiments are associated with thermal equilibrium concentrations of point defects, whereas in the case of carbon out-diffusion a remarkable undersaturation of Si self-interstitials may develop provided the carbon concentration is several orders of magnitude over its solubility value. New carbon out-diffusion experiments demonstrate that this model qualitatively describes the observed carbon diffusion profiles. However, we demonstrate that an accurate description of the experimental profiles is only possible if the Frank–Turnbull mechanism, involving vacancies, is additionally taken into account. Detailed investigations of carbon and boron profiles in the same sample can be used to determine the splitting of the known vacancy component of the silicon self-diffusion coefficient into the vacancy diffusion coefficient and the vacancy thermal equilibrium concentration at 900 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123081
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  • 6
    Electronic Resource
    Electronic Resource
    Electron-beam-enhanced precipitation in highly carbon-doped GaAs layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 409-411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly carbon-doped GaAs layers grown by metalorganic vapor phase epitaxy were investigated by transmission electron microscopy (TEM). Secondary-ion-mass spectroscopy as well as Hall measurements indicated that nearly all the doping atoms incorporated are electrically active. Electron irradiation has been applied to generate point defects interacting with native defects, e.g., substitutional carbon. Owing to this irradiation periodically arranged striations perpendicular to the growth direction were induced, which were observed in situ by TEM. Furthermore, precipitates (Ø=10–15 nm) occurred incorporating noncrystalline material, which most likely is gallium. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118077
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of coherent superdots using metal-organic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate direct growth of electronically coupled zero-dimensional structures forming a super-quantum dot using metal-organic chemical vapor deposition. After the first sheet with InGaAs pyramids is formed on GaAs surface, alternate short-period GaAs-InGaAs deposition leads to spontaneous formation of layered structures driven by the energetics of Stranski–Krastanow growth. As a result columnlike InGaAs structures each having a characteristic lateral size of ∼23 nm at the top and composed of many closely packed InGaAs parts are formed. The full width at half maximum of superdot luminescence of 28 meV at 8 K indicates good average uniformity of the superdot ensemble. Absorption is found to be resonant with luminescence. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117069
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  • 8
    Electronic Resource
    Electronic Resource
    Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3072-3074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing at higher temperature (700 °C) of structures with two-dimensional and three-dimensional arrays in InAs–GaAs quantum dots (QDs) results in an increase in the size and in a corresponding decrease in the indium composition of the QDs. The change in the In composition is monitored by the contrast pattern in the plan-view transmission electron microscopy (TEM) images viewed under the strong beam imaging conditions. Increase in the size of the QDs is manifested by the plan-view TEM images taken under [001] zone axis illumination as well as by the cross-section TEM images. We show that the dots maintain their geometrical shape upon annealing. Luminescence spectra demonstrate a shift of the QD luminescence peak toward higher energies with an increase in the annealing time (10–60 min) in agreement with the decrease in indium composition revealed in TEM studies. The corresponding decrease in the QD localization energy results in an effective evaporation of carriers from QDs at room temperature, and the intensity of the QD luminescence decreases, and the intensity of the wetting layer and the GaAs matrix luminescence increase with the increase in the annealing time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116843
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  • 9
    Electronic Resource
    Electronic Resource
    Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3284-3286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.5Ga0.5As/GaAs (001) quantum dots (QDs) were grown by metalorganic chemical vapor deposition (MOCVD) on exactly (001) oriented substrates using the Stranski–Krastanow growth mode. The dot density and their relative geometrical arrangement are found to be strongly dependent on the substrate temperature. The dots have identical square shaped bases oriented along 〈100〉. For high densities a preferential relative alignment of the dots along the 〈110〉 directions is found. These dots tend to be arranged in a chainlike pattern with decreasing dot size towards the ends of the chains. From these observations the dot formation process for In0.5Ga0.5As quantum dots is suggested to be driven by energetics whereas the relative orientation is governed by kinetic effects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116575
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  • 10
    Electronic Resource
    Electronic Resource
    Carbon diffusion in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2465-2467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon diffusion in silicon has been investigated by using a superlattice structure of carbon spikes (10 nm-wide, carbon concentration 〉1019 cm−3, spikes spaced 100 nm apart) grown epitaxially by Si molecular beam epitaxy. Samples were annealed in the range between 680 and 850 °C. The diffusive behavior of carbon was monitored by secondary ion mass spectrometry. Carbon diffusion profiles observed at temperatures above 800 °C show highly nonregular behavior. The diffusion results are interpreted in terms of the kick-out mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122483
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