Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 600-603 (Sept. 2008), p. 1263-1268
ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
GaN MOS capacitors were characterized to optimize the electric properties of SiO2/GaNinterface. With optimized anneal conditions, an interface state density of 3.8×1010/cm2-eV wasestimated at 0.19 eV near the conduction band and decreases deeper into the band gap.Enhancement-mode GaN MOSFETs were experimentally demonstrated on both p and n GaN epilayerwith record high field-effect mobility of 167 cm2/V-s. Lateral RESURF-type GaN MOSFETs exhibitnon-destructive high voltage (up to 940V) blocking capabilities. Other characterization includingmobility orientation dependence, MOS-gated Hall mobility, current collapse and an NMOS inverterutilizing E/D mode GaN MOSFETs have also been experimentally demonstrated
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1263.pdf
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