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  • 1
    Electronic Resource
    Electronic Resource
    Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage (2000)
    Springer
    Semiconductors 34 (2000), S. 115-118 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Epitaxial-diffused 6H-SiC diodes incorporating a high-resistivity interlayer in the base were studied; the resistance of this interlayer varied when the forward-bias voltage was applied. It is shown that, in spite of the absence of direct indications of the effects of the series resistance (the capacitance is independent of frequency and the value of capacitive cutoff voltage is small), the capacitance measurements for such structures may be incorrect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187964
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  • 2
    Electronic Resource
    Electronic Resource
    Radiation defects in n-6H-SiC irradiated with 8 MeV protons (2000)
    Springer
    Semiconductors 34 (2000), S. 861-866 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Capacitance methods and electron spin resonance (ESR) were applied to study deep centers in n-6H-SiC irradiated with 8 MeV protons. Schottky diodes and p-n structures grown by sublimation epitaxy or commercially produced by CREE Inc. (United States) were used. The type of the irradiation-induced centers is independent of the material fabrication technology and the kind of charged particles used. Irradiation results in an increase in the total concentration of donor centers. The possible structure of the centers is suggested on the basis of data on defect annealing and ESR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188089
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature deformation of nanocrystalline niobium (2000)
    Springer
    Physics of the solid state 42 (2000), S. 1066-1069 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The strain characteristics of nanocrystalline niobium are measured in the temperature range 4.2–300 K. It is shown that the development of a strong local deformation with clearly delineated macroscopic slip bands occurs at 4.2 K and 10 K. The thermal effects at a stress jump observed upon transition of the sample (or a niobium strip placed close to the sample) from the superconducting state to the normal state are estimated. It is demonstrated that the temperature dependence of the yield point σs(T) can be divided into three portions: two portions (T〈10 K and T〉70 K) with a slight change in σs and the third portion with a strong dependence σs(T). The strain characteristics of polycrystals with nano-and larger-sized grains are compared with those of single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131349
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  • 4
    Electronic Resource
    Electronic Resource
    Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum (2000)
    Springer
    Semiconductors 34 (2000), S. 1133-1136 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The parameters of deep-level centers in lightly doped 4H-SiC epilayers grown by sublimational epitaxy and CVD were investigated. Two deep-level centers with activation energies E c -0.18 eV and E c -0.65 eV (Z1 center) were observed and tentatively identified with structural defects of the SiC crystal lattice. The Z1 center concentration is shown to fall with decreasing uncompensated donor concentration N d -N a in the layers. For the same N d -N a , the Z1 center concentration is lower in layers with a higher dislocation density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1317570
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  • 5
    Electronic Resource
    Electronic Resource
    6H-SiC epilayers as nuclear particle detectors (2000)
    Springer
    Semiconductors 34 (2000), S. 243-249 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Schottky diodes based on the n-n + 6H-SiC epilayers grown by sublimation epitaxy and also the layers produced by CREE company (USA) were used as detectors of α-particles of spontaneous decay. Since the thickness of n-layers was smaller than the range of the particles, geometrical parameters of the experiment differed from conventional ones; in the latter case, a particle is brought to rest in the region of electric field in the detector. The calculated and experimental data were compared to study the special features of transport of nonequilibrium charge under the conditions of complete and partial depletion of the structure. It is shown that characteristics of the material that govern the transport of charge carriers can be deduced from the analysis of the behavior of the signal amplitude and the shape of the pulse-height spectrum in relation to bias voltage applied to the Schottky diode. It follows from the results that the present-day sublimation-grown SiC layers are suitable for use as the basis for fabrication of nuclear particle detectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187940
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of uniaxial deformation on electrophysical parameters of 6H-SiC p-n structures (2000)
    Springer
    Semiconductors 34 (2000), S. 538-540 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of uniaxial pressure on the electroluminescence (EL) spectrum and current-voltage (I–V) characteristics of a 6H-SiC p-n structure was studied. Under the effect of pressure, a fast quenching of the excitonic EL is observed and a slower quenching of the impurity EL bands. Uniaxial pressure also distorts the shape of the forward I–V characteristic and shifts it to lower voltages. A conclusion is made that the application of pressure leads to the transformation of thermal injection currents into tunneling currents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188023
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  • 7
    Electronic Resource
    Electronic Resource
    Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum (2000)
    Springer
    Physics of the solid state 42 (2000), S. 1422-1426 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The structural perfection of silicon carbide substrates and homoepitaxial layers grown on the substrates by sublimation has been studied by x-ray diffraction (topography and diffractometry) and optical microscopy. The optimum diffraction conditions (hkil reflections, radiation wavelength λ, and recording geometry) for revealing “micropipes” of the dislocation nature are determined. It is shown that the growth conditions used make it possible to obtain highly perfect epitaxial layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1307045
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  • 8
    Electronic Resource
    Electronic Resource
    Special features of alpha-particle detection with thin semi-insulating 6H-SiC films (2000)
    Springer
    Semiconductors 34 (2000), S. 1386-1390 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The p +-n-n + structures based on 6H-SiC films grown by chemical vapor deposition on the n + substrate were irradiated with 8-MeV protons with a dose of 8×1015 cm−2. In order to stabilize the material, it was annealed for 10 min at 450°C. As a result, the resistivity of the film was ρ=5×109 Ω cm. The effect of proton irradiation was studied by alpha spectrometry. The 5.77-MeV alpha particles were detected for both reverse and forward bias voltages applied to the structure. The results of the following two modes of detection were compared: (i) a particle traverses the structure without losing much of its energy, and (ii) a particle is stopped in the structure. It is shown that, in the former case and under a forward bias, a signal is formed by a mechanism involving a “through-conducting channel.” This makes it possible to determine the product of lifetime of electrons by their mobility. The situation in which the particle range R does not exceed the film thickness was analyzed; this situation is typical of spectrometry. It is noted that a decrease in R results in different behavior of the signal for the bias voltages of opposite polarity. Thus, for forward bias, the signal amplitude decreases more rapidly and for larger values of R.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1331796
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  • 9
    Electronic Resource
    Electronic Resource
    Radiation defects in n-4H-SiC irradiated with 8-MeV protons (2000)
    Springer
    Semiconductors 34 (2000), S. 1016-1020 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Capacitance-related methods and electron spin resonance were used to study the deep-level centers formed in n-4H-SiC as a result of irradiation with 8-MeV protons. For the samples, Schottky diodes and p-n structures formed on the layers either obtained by sublimational epitaxy or produced commercially by CREE Inc. (United States) were used. It was found that the type of centers introduced by irradiation is independent of the technology of the material growth and the type of charged particles. On the basis of the results of annealing the defects and the data of electron spin resonance, the possible structure of the centers is suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1309411
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  • 10
    Electronic Resource
    Electronic Resource
    Bifurcations of the shape of a magnetic fluid droplet in a rotating magnetic field (2000)
    Springer
    Journal of experimental and theoretical physics 91 (2000), S. 1029-1032 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An analysis is made of the behavior of a magnetic droplet suspended in a liquid in a high-frequency uniform, rotating magnetic field. In weak fields the droplet is spheroidal while in strong fields it is disk-shaped. The observed change in the shape of the droplet as the amplitude of the field increases depends on the magnetic permeability μ of the liquid and takes place according to three scenarios: (a) for small μ the spheroidal droplet is continuously converted into a disk; (b) for intermediate μ there is a range of fields in which the droplet becomes a triaxial ellipsoid with its major axis lying in the plane of the field, and spheroid-triaxial ellipsoid-disk transitions take place as a result of a soft bifurcation; (c) at high μ both transitions are hard. Theoretical calculations are made of the stability curve for the various droplet shapes. It is predicted that a change in the types of droplet shape bifurcations will occur in strong fields. A comparison is made with the experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1334993
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