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  • 2000-2004  (5)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4619-4624 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser nitriding is a very efficient method to improve the mechanical properties, surface hardness, corrosion, and wear resistance of iron and steel, with the advantages of a high nitrogen concentration, fast treatment, and accurate position control, and without any undesired heating effect on the substrate. However, the stability of laser-produced iron nitrides is still under investigation. This article reports investigations of the thermal stability of these iron nitrides upon annealing treatments, which were conducted both in vacuum and air. The phase and elemental composition of the nitride layers were deduced from conversion electron Mössbauer spectroscopy, resonant nuclear reaction analysis, and grazing incidence x-ray diffraction. The surface hardness was measured by the nanoindentation method. In laser-nitrided iron, two critical temperatures are found: at 523 K the predominant iron-nitride phase changes from the γ/ε to the γ′ phase. When the temperature exceeds 773 K, all of the nitrogen has escaped from the surface layer. For annealing in air the nitrogen escapes completely already at 673 K, where a thick oxide layer has formed. Stainless steel proved to be more stable than iron, and even up to 973 K no new phases or oxides were produced, here, also, only at 973 K the nitrogen content decreased significantly. Therefore, laser-nitrided stainless steel is well suited for applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3611-3618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, our results on the epitaxial crystallization of ion-bombarded crystalline silicon dioxide (α quartz) are reviewed. The epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650–875 °C. The systematic behavior of alkali ions in enhancing the regrowth rate both with decreasing ion size and increasing concentration is shown. The role of oxygen in the recrystallization was investigated by means of nuclear reaction analysis, by performing thermal treatments of the samples in 18O. A large amount of 18O diffuses inside the amorphous layer in the alkali-ion implanted samples at 600–800 °C. From the strong correlation between the migration of 18O and implanted alkali, it was possible to gain further insights into the recrystallization mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1091-1093 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed-laser nitriding is an attractive method to improve metal surface properties, such as hardness, wear, and corrosion resistance, with the advantage of simple experimental setup, rapid treatment, and precise process control. Here, the dependence of the laser nitriding process on the laser pulse duration was investigated over five orders of magnitude in a series of experiments employing pulsed lasers ranging from nanosecond excimer laser pulses (55 ns) and Nd-doped yttrium aluminum garnet (Nd:YAG) laser pulses (8 ns), to ultrashort Ti:sapphire laser pulses (150 fs). The results revealed that for all laser pulse durations and different wavelengths a large nitriding effect was observed. The excimer laser shows the highest nitriding efficiency. The basic processes for the femtosecond pulsed laser are not well understood but seem to result at least partly from processes within the plasma, whereas nanosecond nitriding is based mainly on processes within the liquid/solid surface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 42 (2004), S. 193-204 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. Thin polycrystalline Ni films of typically 75 nm thickness evaporated on Si or SiO2 substrates were irradiated with 30-900 keV Xe-ions to fluences of 2.5 x 1013 - 4 x 1014/cm2. The magnetization of the Ni films was measured using the longitudinal Magneto-Optical Kerr Effect and Vibrating Sample Magnetometry. The Ni-film thickness and Xe-concentration profiles were determined with Rutherford backscattering spectroscopy and the lattice dilation with X-ray diffraction. The Xe-irradiations were found to induce an in-plane uniaxial magnetic anisotropy within the Ni-films. This magnetic texture was investigated in relationship to the microstructure as function of the ion energy and fluence, the sample temperature, the presence of an external magnetic field during the irradiation and the stress field produced before, during and after the implantations.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 71 (2000), S. 43-45 
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The iron di-silicide β-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 °C is reported. The obtained single-phase β-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mössbauer spectroscopy.
    Type of Medium: Electronic Resource
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