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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7124-7129 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1−xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 A(ring). Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1−xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1−xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A(ring). © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1233-1235 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The interdiffusion of lateral composition modulated (GaP)2/(InP) 2 short-period superlattices (SPSs) is reported. The lateral composition modulation is achieved by the strain induced lateral layer ordering (SILO) process. A blueshift in the interband transition is observed by photoluminescence spectroscopy for capless and SiO 2 encapsulated annealed SPSs (800 °C, 5.5 h), while the intensity and wavelength of Si3N4 encapsulated annealed SPSs are only slightly perturbed. From transmission electron microscopy, capless annealed SPSs (800 °C, 5.5 h) retain their lateral composition modulation, however, the (001/2) satellite reflections disappear. For long anneal times (48 h), the interband transition corresponds to that of a In0.50Ga 0.50P alloy, suggesting the lateral composition modulation disappears. The observed lateral interdiffusion coefficient exceeds the vertical by a factor of ∼30, suggesting SPS interdiffusion is enhanced by native point defects. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4045-4048 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Near band edge absorption spectra of the narrow-gap semiconductor alloys InxTl1−xP, InxTl1−xAs, and InxTl1−xSb were calculated and compared with those of HgxCd1−xTe. To test accuracy, we compared the calculated absorption spectra in GaAs with experimental results and found good agreement. Within 50 meV from the absorption edge, the absorption coeffi cient of InxTl1−xP is found to have about the same magnitude as that in HgxCd1−xTe and GaAs, whereas that in InxTl1−xAs and InxTl1−xSb is much smaller. This result and other merits found from previous studies indicate that InxTl1−xP has a potential to compete favorably with HgxCd1−xTe for long-wavelength infrared applications. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2386-2388 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the photoluminescence (PL) properties of GaxIn1−xAs strained multiple-quantum-wire (MQWR) heterostructures formed in situ by the strain-induced lateral-layer ordering (SILO) process. Samples with moderately strained MQWR active regions demonstrate a negligible variance in emitted PL spectra with respect to temperature. The net temperature dependence of PL wavelength for these samples is less than 0.1 A(ring)/°C between 77 and 300 K. For MQWR samples with stronger lateral composition modulation, the PL peak wavelength blue shifts with increasing temperature. The SILO process induced multiaxial strain in the (GaAs)2/(InAs)2.2 short-period-superlattice active region is responsible for this temperature insensitivity and blueshift of PL wavelength with temperature. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2694-2696 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the effects of misoriented GaAs substrates and varied substrate temperatures on the formation of GaxIn1−xP lateral quantum wells (LQWs) by the strain-induced lateral-layer ordering (SILO) process. Nominally [001] GaAs on-axis substrates, [001] substrates cut 2° off toward the [110] direction, and [001] substrates cut 2° off toward the [1¯10] direction were used to simultaneously grow LQWs. The samples were characterized using plan-view and cross-sectional transmission electron microscopy and polarized photoluminescence spectroscopy. We found that regardless of the substrate misorientation or substrate growth temperature, the SILO process induced LQWs always formed along the [1¯10] direction; primarily determined by the direction of the group-V dimer bonds on the surface during growth. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2261-2263 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the carrier dynamics in a spontaneously organized array of quantum wires grown by a novel technique that involves strain induced lateral ordering (SILO). Our cw–photoluminescence (PL) measurements reveal a very strong optical anisotropy associated with these wires, while the time-resolved PL measurements demonstrate a very interesting carrier dynamics due to localization of excitons and slow interwire scattering. The high quality and freedom from defects of the SILO multiple quantum wire array are nicely borne out by the long decay photoluminescence times (∼4 ns). © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2815-2817 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth of in situ As doped Hg1−xCdxTe by molecular beam epitaxy and activation of As at 250 °C is reported. We have used elemental arsenic, As4, as the p-type dopant source. The activation of As was observed in the 1016–1018 cm−3 range after a low temperature annealing step at 250 °C. However, for doping levels above 5×1018 cm−3, we have observed that the As activation efficiency drops. It is speculated at this time that self-compensation and formation of neutral As complexes may limit doping efficiency at very high levels. We also report our data on the structural and electrical characteristics of these As doped p-type layers using secondary ion mass spectroscopy analysis, and Hall effect measurements. An acceptor activation energy of 5.4 meV was obtained based on the dependence of the Hall coefficient on temperature. This value was attributed to singly ionized As located on a Te site (AsTe•) acting as an acceptor. A brief discussion on activation mechanism of As doped p-type HgCdTe material is also presented. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 10347-10353 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A semiempirical method that yields accurate band gaps and atomic positions in sp2-hybridized, organic, semiconducting polymers has been obtained. This method is a tight-binding calculation where most of the parameters are determined via an ab initio local density approximation method leaving only π–π interactions to be adjusted empirically. Once fitted for one or two systems, the method can be applied to other similar systems without further adjustment. Accurate results have been demonstrated for a number of semiconducting polymers that contain C, S, N, and H. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 46 (1981), S. 0 
    ISSN: 1750-3841
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: The rheological properties of commercial enzyme modified cheese products (Dariteen®, Miles Laboratories, Inc.) are investigated with a micro-rheolog type of viscometer with cone-and-plate geometry. These products exhibit thixotropic shear-thinning behavior, where viscosity changes with the duration and the rate of the applied shear. A viscosity model invoking gradually increasing and decreasing shear rate is investigated. The model involves expression of viscosity as a function of shear rate in the range 1.92-384 sec−1 for the case of Increasing shear rate and 384-1.92 sec−1 for the case of decreasing shear rate. In these investigations, temperature and moisture content range from 24-72°C and 42.3-59.3%, respectively. Hysteresis curves representative of the phenomena are also illustrated.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Real estate economics 12 (1984), S. 0 
    ISSN: 1540-6229
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Wirtschaftswissenschaften
    Notizen: This paper presents the results of a study dealing with a number of issues regarding real estate investment. Utilizing a data set consisting of returns from two of the oldest, continuously operating commingled real estate funds (CREFs), questions relative to investment performance, inflation hedging attributes and diversification benefits are addressed. The methodology used in exploring these issues are variants of the traditional capital asset pricing model (CAPM), extended to consider uncertain inflation (CAPMUI) and an arbitrage pricing model in which real estate performance is judged relative to a more inclusive market index representing larger numbers of substitute investments. Finally, issues relative to portfolio performance are considered by constructing portfolios containing all possible combinations of real estate, stocks and bonds to assess the potential for diversification benefits and portfolio performance.
    Materialart: Digitale Medien
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