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  • 1995-1999  (6)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of anodized silicon carbide (1997)
    Springer
    Semiconductors 31 (1997), S. 202-203 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The luminescence of single-crystalline 6H-SiC plates after electrochemical etching has been investigated. The photoluminescence spectrum was found to change strongly after etching; the decay times of separate bands were determined. Just as in the case of silicon, the change in the photoluminescence could be due to the formation of nanostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187109
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Growth and optical properties of BiI3 and PbI2 microcrystals (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1568-1573 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study has been made of low-temperature absorption and luminescence spectra of bismuth iodate microcrystals in various hosts (layered cadmium iodate, microporous glasses and polymers), as well as of the spectra of mesoscopic domains formed in bulk bismuth iodate by mechanical strains. The structure of the spectra and the quantum shifts of the exciton levels yielded information on the dimensions and size dispersion of the microcrystals and domains, as well as on the effect of microcrystal size on the Stokes losses. The quantum exciton-line shifts in microcrystalline lead-iodate films grown in pores of the glass host have been used to calculate the film thicknesses. A photoinduced change in the mechanism of radiative recombination was observed in PbI2 microcrystals. The spectrum of resonant Raman scattering in lead iodate microcrystals consists of broad bands corresponding to the branches of optical phonons undergoing strong angular dispersion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130599
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices (1998)
    Springer
    Semiconductors 32 (1998), S. 136-139 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The transmittance, luminescence, and Raman spectra in PbI2 microcrystals of 2H polytype, grown in the voids of alkali-borosilicate glasses (void dimensions 4–30 nm), are investigated. Depending on the conditions of growth, the exciton states of the microcrystalline systems were found to shift toward higher energies by 35–60 meV relative to the free exciton energy in bulk single crystals as a result of the quantum-well effect. The resonant Raman spectra of PbI2 microcrystals exhibit not only the conventional Raman component A 1g , but also components associated with the appearance of the E u and A 2u optical phonons and the two-phonon processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187333
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of γ irradiation on the photoluminescence kinetics of porous silicon (1999)
    Springer
    Semiconductors 33 (1999), S. 1315-1317 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187915
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Rapid luminescence saturation of the Mn2+ 3d shell in the Cd1−x MnxTe dilute magnetic semiconductor with a high manganese concentration (1999)
    Springer
    Physics of the solid state 41 (1999), S. 41-44 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The dependence of manganese-ion intracenter-luminescence intensity on optical excitation level has been studied in the Cd1−x MnxTe dilute magnetic semiconductor with 0.4〈x〈0.7. It is shown that the intracenter luminescence saturates due to effective nonlinear quenching already at low excitation levels. Mechanisms are proposed which can provide nonlinear quenching and offer a qualitative explanation for the temperature dependence of the luminescence saturation in samples with different manganese concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130726
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment (1998)
    Springer
    Semiconductors 32 (1998), S. 1075-1076 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Plasma processing of single-crystal wafers of gallium arsenide and gallium phosphide is employed to obtain thin wideband layers. The spectral dependence of the photoluminescence of the layers and of the photosensitivity of the corresponding layer/substrate structures is investigated. An analysis of the results of these studies gives us reason to believe that the described process leads to replacement of arsenic and phosphorus atoms by nitrogen and to the formation of wideband layers of solid solutions on the surface of the indicated semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187570
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    Paper (German National Licenses)
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