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  • 1995-1999  (9)
  • 1
    Electronic Resource
    Electronic Resource
    Influence of nitrogen profile on electrical characteristics of furnace- or rapid thermally nitrided silicon dioxide films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7114-7122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacitors. Differences between the two nitridation processes were observed and explained. In lightly nitrided films, nitrogen occupies two configurations. Nitrogen is bound to three silicon atoms with at least one in the substrate or all three in the oxide. In RTP-nitrided films, both of these species are confined to within 1.5 nm of the Si/SiO2 interface. In furnace-nitrided films, the first species is also located close to the interface whereas the second one fills most of the regrown oxide thickness. In furnace-grown films, which are more heavily nitrided, a third structure due to Si2=N–O is observed throughout the layer. The electrical characteristics are well correlated with the amount of nitrogen at the interface that is bound to Si atoms in the substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361481
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  • 2
    Electronic Resource
    Electronic Resource
    Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: An internal photoemission study (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3258-3261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured by internal photoemission the conduction-band discontinuity ΔEc in p-In0.53Ga0.47As/n-InP heterojunctions with a Si δ layer (1×1012 cm−2) inserted in InP at 10 A(ring) from the interface. The n-type Si δ doping induced an inhomogeneous and temperature-dependent conduction-band offset reduction as revealed by two onsets in the spectral response. The first one was absent in room-temperature data and was due to the Si intralayer presence. The second correlated with the conduction-band discontinuity value for heterojunctions without δ doping and its presence served as an indication of the inhomogeneity of the Si δ layer. The measured value of the modification was 0.11±0.04 eV in good agreement with the calculated one. Current-voltage measurements confirmed that the Si δ layer modified the transport parameters of the heterojunction only at low temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360014
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  • 3
    Electronic Resource
    Electronic Resource
    Photoemission electron microscopy studies of Pt/GaP(001) buried interfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1460-1464 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using (secondary) photoelectron emission microscopy, we studied the fully formed 80 A(ring) Pt/n–GaP(001) interface with a lateral resolution better than 2 μm. We probed the chemically etched and sulfur passivated GaP(001) surface by ultraviolet and soft x rays. The radiation source was either a deuterium lamp or the radiation from ELETTRA's U12.5 undulator. Due to their escape depth, the photoemitted secondary electrons carry chemical information of buried interfaces. The use of tunable synchrotron radiation enabled us to obtain chemical contrast by digital subtraction of the microimages taken at photon energies above and below each core-level absorption edge. The microimages revealed lateral changes in photoyield efficiency and chemical composition. The results were confirmed by x-ray photoemission spectromicroscopy measurements performed using Al Kα radiation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362983
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  • 4
    Electronic Resource
    Electronic Resource
    Ar+ bombardment of Si(100) in oxygen atmosphere: Room temperature oxide formation studied by x-ray photoelectron spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3820-3823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the formation of silicon oxide thin films at room temperature obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0≤Eb≤400 eV) and characterized by x-ray photoelectron spectroscopy. The oxidation rate, as well as the SiO2/SiOx (x=0.5, x=1, and x=1.5) ratio, have been found to increase with the ion beam energy. For the highest energy bombardment, Eb=400 eV, we observed the formation of a uniform, electrically insulating, SiO2 top layer about 37 A(ring) thick. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359896
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  • 5
    Electronic Resource
    Electronic Resource
    Indented barrier resonant tunneling rectifiers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4174-4176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article concerns a novel negative-conductance device consisting of a series of N laterally indented barriers which exhibits resonant tunneling under one bias polarity and simple tunneling under the opposite one, thus acting as a rectifier. Electrons undergo resonant tunneling when the bias creates a band profile with N triangular wells which can each contain a resonant state. From 1 to N the addition of each indentation can be used to increase the current density and the rectification ratio, calculated at the current-peak bias at resonance, provided that at a given bias all the states in the triangular wells align each other with the emitter Fermi energy in order to form a resonance along the structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363290
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  • 6
    Electronic Resource
    Electronic Resource
    Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 292-296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a modification by thin silicon nitride intralayers of the Au/n-GaAs(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon–nitrogen mixture plasma. The nitridation was performed at a beam energy 〈40 eV, with 573 K sample temperature. Gold was deposited to study in situ the Schottky barrier formation process with x-ray photoelectron spectroscopy. Internal photoemission spectroscopy and current–voltage measurements were used to evaluate the barrier modification on fully formed interfaces. Such a modification was analyzed in terms of theoretical calculations of the dipole created by the substrate–intralayer bonds. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363847
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  • 7
    Electronic Resource
    Electronic Resource
    Novel spectromicroscopy: Pt–GaP studies by spatially resolved internal photoemission with near-field optics (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2361-2363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on Pt–GaP is described in which topographic and nontopographic phenomena are revealed, in particular recombination rate variations and small lateral changes of the Schottky barrier height. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117525
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic force microscopy characterization of sputtered vanadium oxide thin films grown on Al2O3 substrate (1998)
    Springer
    Applied physics 66 (1998), S. 1175-1178 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.16.Ch; 68.55.-a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 2 O5) thin films, which are good candidates for the realization of gas detectors, have been grown on rough alumina substrates and characterized by atomic force microscopy (AFM). The films were prepared by radiofrequency reactive sputtering, with different concentrations of oxygen in the growth atmosphere; after deposition the samples were thermally treated in order to get the best sensitivity to different gases. Because of the structures already present on the rough alumina substrate, AFM showed large topographical variations (several hundred nanometers) for V2O5 films grown on a rough alumina substrate. For both thermally treated and untreated samples, the roughness increases with increasing percentage of oxygen, but the sample with the best sensing properties (15% of oxygen) shows a characteristic minimum. Moreover, we observe that the thermal treatment also produces a general decrease in roughness, which is especially marked in samples with a low percentage of oxygen. The sensor has been tested with NO2, and the best sensitivity was obtained for an operating temperature around 300 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/
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  • 9
    Electronic Resource
    Electronic Resource
    Realistic cluster approach for interpreting the valence band structure of phosphorus oxyanions (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 477-483 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The electronic structures of different phosphates were studied by using the DV-Xα cluster molecular orbital method. Experimental data on crystal structures from x-ray diffraction measurements were used to set up realistic model clusters. Theoretical XPS valence band spectra obtained from the DV-Xα calculations were compared to our high-resolution XPS measurements on polycrystalline powder Li3PO4, Na3PO4, Na4P2O7 and (NaPO3)n samples. These new measurements made possible a more rigorous test of the theoretical approach and more reliable shape analysis than the previous set of data obtained by non-monochromatized measurements combined with the resolution enhancement technique. Systematic study of different clusters showed that the cations around the PO4 cluster and the distortion of the PO4 tetrahedra due to the anisotropic crystal forces play only a minor role and their influence on the valence band spectra was found to be negligible. In the case of polyphosphates, considerable changes were found in the valence band spectra as a consequence of small changes in the bond angle of the P - O - P bridges. Our results, based on cluster parameters specific to the anhydrous crystals, are in good agreement with the experiments.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740230707
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