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  • 1
    Electronic Resource
    Electronic Resource
    Evidence of magnetic fields imprinted in ferromagnetic targets by the spontaneous magnetic field of a laser-produced plasma demonstrated by after-pulse pulsations of Kα emission (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3676-3683 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of an unusually long sequence of Kα pulses from planar Fe foil targets irradiated by a 180 ps laser pulse at intensities of(0.1–3)×1016 W/cm2 is presented. The duration of the Kα emission was up to 5 ns: approximately 30 times longer than the laser pulse. A proposed interpretation of these observations is that suprathermal electrons generated in the laser-produced plasma survive after the laser pulse and are gradually decelerated as they circulate in the magnetic field imprinted during the laser pulse in the ferromagnetic target material. Short bursts of Kαemission occur as these electrons pass through the target. The magnetic field in the cold part of the ferromagnetic target with temperature below the Curie temperature is an integral imprint of the spontaneous magnetic field generated in the laser-produced plasma. A model of this process provides a good fit to the experimental data. The effect could be useful as a diagnostic tool for measuring the spontaneous magnetic field and the energy of fast electrons. These results also open an opportunity for studies of magnetization processes in a ferromagnetic at an extremely high magnetic field: on the megagauss scale. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872565
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  • 2
    Electronic Resource
    Electronic Resource
    White light continuum as a tunable radiation source for second-harmonic generation experiments (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3312-3316 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have used a white light continuum generated with ultrashort laser pulses from a Ti:sapphire laser system as the radiation source for second-harmonic generation measurements. The white light continuum provides easily tuned radiation for experiments requiring a range of wavelengths. Despite the small coherence length of the radiation, parametric processes, such as second-harmonic generation, are possible with this source. In particular, surface second-harmonic generation using the white light continuum is reasonable because the extent of the interface is much smaller than the coherence length of the radiation. We demonstrate second-harmonic generation from a gold surface and show that surface second-harmonic generation using the white light continuum can be used to measure absorption spectroscopy of molecules adsorbed to surfaces via resonance enhancement of the surface second-harmonic signals. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148290
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  • 3
    Electronic Resource
    Electronic Resource
    Development of a Gold Amalgam Voltammetric Microelectrode for the Determination of Dissolved Fe, Mn, O2, and S(-II) in Porewaters of Marine and Freshwater Sediments (1995)
    s.l. : American Chemical Society
    Environmental science & technology 29 (1995), S. 751-761 
    Details
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/es00003a024
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of pp60c-src Tyrosine Kinase Activities Using a Continuous Assay: Autoactivation of the Enzyme Is an Intermolecular Autophosphorylation Process (1995)
    s.l. : American Chemical Society
    Biochemistry 34 (1995), S. 14843-14851 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00045a027
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2156-2158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750 °C for up to 25 h. However, at 900 °C the growth of an oxide approximately 5000 Å thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga–O to Ga–N bonding. The Ga L3M45M45 core level binding energy was also investigated and β-Ga2O3 and GaN each presented a characteristic peak shape. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118944
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  • 6
    Electronic Resource
    Electronic Resource
    Ultraviolet laser ablation of polymers: spot size, pulse duration, and plume attenuation effects explained (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5458-5468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A versatile model for ultraviolet (UV) laser ablation of polymers is presented, which is very successfully applied to the calculation of a variety of different properties of this process, including the influence of plume attenuation dynamics. The polymer is described as a system of chromophores with two possible electronic states. The model is based on the combination of photothermal decomposition and photodissociative bond breaking in the electronically excited state. Laser induced chemical modifications are incorporated via different absorption coefficients for the initial and for the modified polymer after absorption of UV light. Dynamic attenuation of the expanding ablation plume and heat conduction are taken into account. The results of the theoretical calculations are compared with the results of three different series of experiments performed with polyimide (PI) and polymethylmethacrylate at the excimer laser wavelength 248 nm and with PI also at 308 nm: (1) Measurement of the ablation rate as a function of fluence for four different pulse durations between 20 and 250 ns; (2) Measurements of the ablation rate as a function of fluence for five different laser irradiation spot radii between 10 and 150 μm, and (3) Time resolved measurement of the dynamic plume attenuation at the ablating laser wavelength as a function of fluence for four different pulse durations between 20 and 250 ns. The model leads to a prediction of etch rates, ablation thresholds, plume attenuation, and surface temperatures during the ablation process, which is in good agreement with the experimental results. The observed increase of the ablation rate with increasing pulse length and with decreasing laser spot size can be explained by the model as a consequence of laser induced modified absorption in combination with the dynamic shielding of the expanding plume. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367377
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  • 7
    Electronic Resource
    Electronic Resource
    Interfacial reactions between nickel thin films and GaN (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 650-654 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Ni films on GaN were annealed at temperatures between 400 and 900 °C in N2, Ar, and forming gas and were analyzed using glancing angle x-ray diffraction and Auger depth profiling. The first indication of an interfacial reaction was found after an anneal at 600 °C for 1 h, after which Ga was observed to be dissolved in the face-centered cubic Ni film. The extent of dissolution increased with continued annealing. After annealing at 750 °C for 1 hr in either N2 or Ar, greater intermixing occurred. The reaction product was either Ni3Ga or face-centered cubic Ni with dissolved Ga. Annealing at 900 °C resulted in the formation of the B2 phase NiGa. It was clear from Auger depth profiles that the reacted film contained significantly more Ga than N and that N2 gas was released to the annealing environment, even when the samples were annealed in N2 gas at 1 atm. Thus, a trend of increasing Ga content in the reacted films was observed with increasing temperature. The observed reactions are consistent with the thermodynamics of the Ni–Ga–N system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365593
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  • 8
    Electronic Resource
    Electronic Resource
    Ultrafast ablation with high-pulse-rate lasers. Part II: Experiments on laser deposition of amorphous carbon films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4222-4230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast pulsed laser deposition is a novel technique for depositing particle-free, thin solid films using very high repetition rate lasers. The process involves evaporation of the target by low energy laser pulses focused to an optimum intensity to eliminate particles from the vapor. This results in films with very high surface quality while the very high repetition rate increases the overall deposition rate. Here we report an experimental demonstration of the process by creating ultrasmooth, thin, amorphous carbon films using high repetition rate Nd:YAG lasers. Both a 10 kHz, 120 ns Q-switched Nd:YAG laser, or a 76 MHz 60 ps mode-locked Nd:YAG laser were used in the experiments. The number of particles visible with an optical microscope on the carbon film deposited using the mode-locked laser was less than one particle per mm2. Scanning electron microscopy images demonstrated that the deposited film had a very fine surface texture with nanoscale irregularities. Atomic force microscopy surface microroughness measurements revealed a saturation-like behavior of the root-mean-square roughness at 〈12 nm over the whole deposited surface area for 10 kHz Q-switched laser evaporation; and almost at the atomic level (〈1 nm) for the 76 MHz mode-locked laser evaporation. Raman spectroscopy of the deposited films indicated that they consisted of a mixture of sp3 and sp2 bonded amorphous carbon. The thickness of the amorphous carbon film deposited simultaneously on two 4 in. silicon wafers varied by only ±5% over an area of ∼250 cm2. The deposition rate was ∼2–6 Å/s at a distance of ∼150 mm from the target, which is 10 to 25 times higher than that achieved with conventional high energy low repetition rate nanosecond lasers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370334
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  • 9
    Electronic Resource
    Electronic Resource
    A quasiclassical trajectory study of energy transfer in benzene–benzene collisions (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 3391-3394 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Collisional energy transfer from large, highly vibrationally excited molecules has been studied by quasiclassical trajectory calculations and results for large polyatomic colliders are reported for the first time. Highly excited benzene molecules in a thermal bath gas of benzene were investigated using a sum of atom–atom Lennard-Jones interactions for the intermolecular potential. Excellent agreement with experiment has been found for the first moment of energy transfer 〈ΔE〉 and its energy dependence. 〈ΔE〉 is increasing with a slight leveling off at high energies. The results suggest that vibrational energy loss of the excited molecule is dominated by V–V transfer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471043
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1902-1904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etch rates and selectivity of Si3N4 over SiO2 have been investigated by microwave discharging a mixture of NF3 and Cl2 and flowing the resultant fluorine and chlorine atoms and interhalogenous molecules simultaneously over a silicon wafer covered with low pressure chemical vapor deposition (LPCVD) Si3N4, and a wafer covered with thermally grown SiO2. The temperature dependence of the etch rates of Si3N4 and SiO2 in the NF3/Cl2 mixture was examined in the range from 25 to 500 °C, and the selectivity of the nitride etch over the oxide etch as well as nitride etch rate was found to increase with increasing temperature. It was also found that both etch rates and selectivities increase with NF3 flow rates within the range used in this study. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114371
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