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  • 1
    Electronic Resource
    Electronic Resource
    Positron lifetime and 2D-ACAR studies of divacancies in Si (1995)
    Springer
    Applied physics 61 (1995), S. 65-70 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.70; 61.70; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V2) with the definite charge states, V0 2, V-1 2 or V-2 2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V- 2 using a specimen containing oriented divacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538213
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Cathodoluminescence study on dislocations in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3253-3260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study was made on the characteristics of cathodoluminescence (CL) from Si crystals with various configurations of dislocations. D3 and D4 were observed along slip lines, while D1 and D2 were found to be strong in the region where plural slip lines intersect each other. It was shown that not only Lomer–Cottrell dislocations but also jogs act as recombination centers for D1 and D2 luminescence. The spatial distributions of D1 and D2 luminescence were observed to be similar to each other, this was also true of D3 and D4. The effect of hydrogenation on CL distribution was also investigated. Contrary to the reports of other groups, no evidence was obtained on the enhancement of D line luminescence due to metal contamination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361271
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Recombination-enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6198-6203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the recombination-enhanced Fe atom jump between the first (1st) and second (2nd) neighbor sites of Fe–Al and Fe–B pairs in Si. We first annealed specimens at 80 °C to generate Fe–acceptor pairs after doping of Fe. Concentrations of the 1st and 2nd neighbor Fe–acceptor pairs were determined by electron-spin-resonance (ESR) measurement after annealing at around 150 K under optical excitation. The concentration of the 1st neighbor pair was decreased and that of the 2nd neighbor pair was increased by the above annealing. Activation energy for the above changes was about 0.11 eV in the case of the Fe–Al pair. This is much smaller than that (0.8 eV) of thermal annealing alone. In the case of the Fe–B pair, the ESR signal of the 2nd neighbor pair could be detected due to annealing at around 160 K under optical excitation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363695
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Precipitation behaviors of Cu and Fe on Frank-type partial dislocations in Czochralski-grown silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 214-216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Precipitation behaviors of Cu and Fe on Frank-type partial dislocations bounding bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron beam-induced-current (EBIC) technique and transmission electron microscopy (TEM). Frank partials in a Cu-contaminated specimen do not exhibit an EBIC contrast at room temperature when the specimen is cooled slowly; however, in the Fe-contaminated specimen, they exhibit EBIC contrast at room temperature due to their Fe contamination. The TEM micrograph shows that Cu develops precipitate colonies in the region away from stacking faults and does not precipitate on Frank partials in the specimen. The results indicate that Fe impurity decorates Frank partials more easily than Cu impurity in Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116464
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  • 5
    Electronic Resource
    Electronic Resource
    Differential effects of the serotonin receptors on cultured rat cerebral cortical neurons (1997)
    Springer
    Cellular and molecular life sciences 53 (1997), S. 233-236 
    Details
    ISSN: 1420-9071
    Keywords: Key words. Serotonin; ligand-gated receptor; G-protein-coupled receptor; patch-clamp; cerebral cortical neuron.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract. Effects of serotonin (5-HT) on cerebral cortical neurons were examined by patch clamp techniques. 5-HT produced a variety of responses such as outward (19/73 patches/neurons), slow inward (15/73 patches/neurons), fast inward (8/73 patches/neurons), and mixed currents (initially fast inward deflection followed by an outward response: 2/73 patches/neurons), with a latency of 12 sec, 15 sec, 0 sec, and 0 sec respectively, at a holding potential of −60 mV in whole-cell patches. The fast inward currents were again evoked by a selective 5-HT3 receptor agonist, 1-(m-chlorophenyl)-biguanide hydrochloride (CPBG). In the cell-attached patch clamp configuration, 5-HT inside the patch pipette elicited single channel currents with slope conductances of 42 pS and 132 pS (4/42 patches/neurons). CPBG inside the patch pipette evoked inward single channel currents with a lower slope conductance of 41 pS (3/23 patches/neurons). In contrast, application of 5-HT or a 5-HT2 receptor agonist, α-methyl-5-hydroxytryptamine-maleate, outside the patch pipette induced outward single channel currents with a major slope conductance of 140 pS (8/30 patches/neurons) or 135 pS (6/20 patches/neurons), respectively. These results indicate that the outward and fast inward currents may be mediated respectively by the 5-HT2 receptor, which is coupled to a G-protein, and by the 5-HT3 receptor, which contains the non-selective cation channel, and that the mixed type may be caused by both the 5-HT2 and 5-HT3 receptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00000596
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Positron lifetime and 2D-ACAR studies of divacancies in Si (1995)
    Springer
    Applied physics 61 (1995), S. 65-70 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V2) with the definite charge states, V 2 0 , V 2 −1 or V 2 −2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V 2 − using a specimen containing oriented divacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538213
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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