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  • Digitale Medien  (206)
  • 1990-1994  (201)
  • 1970-1974  (5)
  • 1
    Digitale Medien
    Digitale Medien
    The I-V characteristics of double-barrier resonant tunneling diodes: Observation and calculation on their temperature dependence and asymmetry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3131-3136 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a calculation on the current-voltage characteristics of double-barrier resonant tunneling diodes. The results can well-explain experimental observations, in particular, the temperature dependence of both the absolute current amplitude and the resonant voltage positions. Our calculation takes into account the self-consistent Poisson equation, quantum mechanical tunneling, and band-gap offset at the heterojunctions. In addition, the calculation includes a realistic scattering-induced broadening effect, with which a quantitative fit throughout the entire negative differential resistance (NDR) region is demonstrated. Finally, we show that the differential resistance in the NDR region can be tuned, when asymmetrical tunneling barriers are used.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349292
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  • 2
    Digitale Medien
    Digitale Medien
    On the intrinsic bistability in resonant tunneling structures: Observation of area and temperature dependence of hysteresis (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2473-2475 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report experimental observation on the area and temperature dependence of the hysteresis in the current-voltage characteristics of double-barrier resonant tunneling diodes. Our observation shows that the hysteresis can simply result from a load line effect, since (1) the hysteresis will disappear when the the device area is reduced, and (2) the hysteresis becomes wider at lower temperatures. We compare the data with theoretical predictions from the intrinsic bistability picture, and obtain the criterion for observing current bistability.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349404
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  • 3
    Digitale Medien
    Digitale Medien
    Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3711-3716 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Zn-doped GaxIn1−xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1−xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at EV+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345011
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  • 4
    Digitale Medien
    Digitale Medien
    Interband tunneling through a heavy hole state (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6443-6445 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated interband tunneling transport through a hole well in five GaSb/AlSb/GaSb/AlSb/InAs type II tunnel devices in which the effect of the variation of barrier and well widths is systematically studied. Low temperature measurements were performed using high magnetic fields applied perpendicular to the current and hydrostatic pressures as external perturbations. A resonant current through the ground heavy hole subband in the GaSb well could be identified for the first time. This examination points out (i) the role of in-plane momentum conservation in determining the resonance onset voltage, and (ii) the occurrence of a shoulder in the current when a maximum of states conducts through a resonant subband.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355128
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  • 5
    Digitale Medien
    Digitale Medien
    Instability of a GexSi1−xO2 film on a GexSi1−x layer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4444-4446 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The stability of an amorphous GexSi1−xO2 in contact with an epitaxial (100)GexSi1−x layer obtained by partially oxidizing an epitaxial GexSi1−x layer on a (100)Si substrate in a wet ambient at 700 °C is investigated for x=0.28 and 0.36 upon annealing in vacuum at 900 °C for 3 h, aging in air at room temperature for 5 months, and immersion in water. After annealing at 900 °C, the oxide remains amorphous and the amount of GeO2 in the oxide stays constant, but some small crystalline precipitates with a lattice constant similar to that of the underlying GeSi layer emerge in the oxide very near the interface for both x. Similar precipitates are also observed after aging for both x. The appearance of these precipitates can be explained by the thermodynamic instability of GexSi1−xO2 in contact with GexSi1−x. In water at RT, 90% of GeO2 in the oxide is dissolved for x=0.36, while the oxide remains conserved for x=0.28.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352211
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  • 6
    Digitale Medien
    Digitale Medien
    The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4432-4435 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose and study a new GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode by varying the thicknesses of the InAs layer. A twice-higher peak current density and a three-times-higher peak-to-valley current ratio in the proposed structure with a 30-A(ring)-thick InAs layer were observed relative to the structure with no InAs layer. This result indicates that the characteristic of the negative differential resistance can be improved simply by placing a thin effective InAs barrier on the GaSb side of the GaSb/AlSb/InAs single-barrier structure. The increase of the peak current is interpreted as the result of forming a quasi-bound state in the GaSb well. This interpretation is supported by the observation that the current-voltage characteristic of the proposed structure is similar to that of a conventional GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structure.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350783
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  • 7
    Digitale Medien
    Digitale Medien
    Rapid thermal annealing of sol-gel derived lead zirconate titanate thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4465-4469 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Sol-gel derived ferroelectric thin films of lead zirconate titanate have been annealed through the rapid thermal annealing (RTA) technique to investigate the effect of various annealing temperature-time combinations. Crystallization of the film into the perovskite phase required 10 s at 600 °C and a mere 1 s at 700 °C. Rapid thermally annealed films recorded weak-field permittivities greater than 1000, dissipation losses of 0.02–0.05, maximum remanent polarization of 29 μC/cm2, and coercive field around 40 kV/cm. RTA films are distinguished by superior breakdown strengths, and morphologically smoother surfaces. The frequency dependent dielectric constants have been discussed in terms of a lumped circuit model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350789
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  • 8
    Digitale Medien
    Digitale Medien
    Dielectric properties of polypyrrole doped with tosylate anion in the far infrared and microwave (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 899-905 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report measurements of the dielectric behavior in the far infrared (10–200 cm−1) and in the microwave (8.5–12.5 GHz) regime for the conducting polypyrrole (PP) doped with tosylate anion. The dielectric constants have been determined from reflection and transmission data using the Fresnel equations. The magnitude and dispersive nature of the complex index of refraction is described for a number of samples with different levels of conductivity. The ability to tailor the dielectric behavior of these materials has been demonstrated by suitably reducing the oxidized PP films. The high reflectivity in the far infrared and microwave region cannot be accounted for in terms of the Drude model defining metallic behavior. An application exploiting the large real part of the index of refraction and relatively low loss observed in the microwave region is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347331
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  • 9
    Digitale Medien
    Digitale Medien
    Observation of nonbolometric responses to microwave irradiation on YBaCuO films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7316-7318 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nonbolometric response to 8.3-GHz microwave radiation in the resistive transition region of electron-beam-deposited YBaCuO thin films is distinguished from the bolometric response by their different applied microwave power dependence with the nonbolometric effect dominating the voltage response below the boiling temperature of liquid nitrogen. In the presence of a dc magnetic field, the microwave-induced dc voltage in unbiased films shows an oscillatory behavior as a function of microwave power as well as a polarity reversal depending upon the direction of the dc magnetic field. This behavior is consistent with the electromagnetic response arising from the Josephson vortex motion in the junction regions within these granular films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347581
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  • 10
    Digitale Medien
    Digitale Medien
    Weak links and critical current density in Bi2Sr2CaCu2Ox thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3886-3889 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magnetization measurements were performed on epitaxial and textured Bi2Sr2CaCu2Ox thin films deposited on (100) LaAlO3 and MgO substrates. An anomalous dependence of the critical current density derived from magnetization hysteresis measurement on magnetic field is observed. The measured critical current density shows a minimum at a magnetic field (Hm) far below the upper critical field Hc2. The measured Hm in epitaxial films has an exponential dependence on temperature, e−T/T0 (T0∼12.5 K). The anomalous field dependence of critical current density is attributed to the presence of weak links in the films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352875
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