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  • 1
    Electronic Resource
    Electronic Resource
    p on n heterostructures in HgCdTe on GaAs analyzed by transmission electron microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7952-7954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of p on n HgCdTe heterostructures grown by molecular beam epitaxy on GaAs(211) B substrates have been analyzed by transmission electron microscopy. The HgCdTe absorber layer is grown on a CdTe buffer and doped n type with indium. The p-type arsenic dopant is incorporated in the heterostructure during growth into a HgTe/CdTe cap superlattice and annealed ex situ to form the random alloy. The active p-n junction is formed below the as-grown p-n interface as a result of As diffusion. We compare the device performance with the microstructural defects in the various regions of the device layers and show the importance of dislocations near the p-n junction as well as in the n layer in influencing device quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354093
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  • 2
    Electronic Resource
    Electronic Resource
    Allowance-intake relations of cattle grazing vegetative tall fescue (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 47 (1992), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Herbage allowance is one of the important pasture factors in the determination of intake by grazing livestock. Ingestive behaviour of 12 adult Angus cows (Bos taurus) was measured over a range of allowances (0·25 to 0·72 kg dry matter (DM) per 100 kg live weight (LW) for a 1-h period) of vegetative tall fescue (Festuca arundinacea Schreb.). A balanced change-over design was used to estimate direct, residual and permanent effects of herbage allowance on rate of DM intake, rate of biting and herbage DM intake per bite. In Experiment 1, herbage DM intake per meal increased linearly from 0·68 to 1·72 kg (100 kg LW)−1 as DM allowance increased from 0·25 to 0·72 kg (100 kg LW)−1 h−1. Cows grazed at ·30 kg (100 kg LW)−1 h−1 and stopped grazing when the sward was reduced to a height about 10 to 12 cm above the soil surface, approximately defined by the tops of pseudostems. In Experiment 2, herbage DM intake rates of 0·29, 0·47 and 0·42 kg (100 kg LW)−1 h−1 were recorded as cows grazed allowances of 0·43, 0·70 and 0·90 kg (100 kg LW)−1 h−1 for most of the 1-h grazing period. Limiting herbage DM allowances in Experiment 2 were associated with small reductions in rate of biting and herbage DM intake per bite as allowance declined. Sward DM density (〉5 cm) was an important variable in the determination of herbage DM intake rates at lower herbage allowances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2494.1992.tb02265.x
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  • 3
    Electronic Resource
    Electronic Resource
    HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4620-4622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the demonstration of an all molecular beam epitaxy HgCdTe bias-selectable dual-band infrared photodetector. The mesa device, an n-p-n three layer HgCdTe heterostructure, was in situ doped with arsenic and indium for p- and n-type doping. The device design is similar to a heterostructure floating base transistor. The feasibility of the two-color bias-switchable detector was demonstrated by obtaining backside illuminated spectrally pure dual-band detection at 77 K. Wavelength cutoff (λco) selection to 5.2 μm with 60% quantum efficiency (QE) was obtained by applying a negative bias of −250 meV, and to λco=7.9 μm with 36% QE by applying a positive bias of 250 meV. The current-voltage characteristics of this device can be described in terms of a simple back-to-back diode model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349099
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4300-4305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we have applied the admittance spectroscopy technique to characterize the DX centers in AlxGa1−xAs alloys doped with silicon. Our experimental results reveal the existence of two DX centers related to silicon in AlxGa1−xAs alloys, named DX-I and DX-II centers, with thermal activation energies of 0.370 and 0.415 eV, respectively. These values are lower than those obtained by other authors using capacitance techniques. To explain this disagreement it should be noticed that capacitance techniques can be affected by the nonexponential behavior of the thermal emission transients of the DX centers in AlxGa1−xAs alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348403
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  • 5
    Electronic Resource
    Electronic Resource
    A study of metal-oxide-semiconductor capacitors fabricated on SF6 and SF6+Cl2 reactive-ion-etched Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2710-2716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor capacitors have been fabricated on SF6 and SF6+Cl2 reactive-ion-etched silicon in order to study the resulting defects at the Si-SiO2 interface and in the bulk of the silicon substrate. The reactive-ion-etching (RIE) induced damage reveals itself by the presence of positive charge in the oxide, by interfacial states, and by two deep levels in the silicon bulk located at 300 and 335 meV above the valence band and probably related to fluorine atoms. We have studied the effect of the chamber pressure and the plasma composition on the resulting damage. This damage is more important when the chamber pressure is low because of the higher free-mean path of the plasma ions. On the other hand, when the Cl2 concentration in the plasma is raised the densities of interface states and of the deep levels decrease while the positive charge in the oxide increases. Finally, we have shown that a post-RIE thermal annealing can be used to restore the electrical properties of the RIE-damaged silicon surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351043
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  • 6
    Electronic Resource
    Electronic Resource
    Optical capture cross sections of palladium in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 298-301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical electron and hole capture cross sections for the deep levels Ec−0.22 eV and Ev+0.33 eV associated to Pd in Si have been measured using constant-capacitance deep level optical spectroscopy and optical admittance spectroscopy. The experimental results fit well to the model of Lucovsky. The threshold energies obtained for the electron and hole emission from the Ec−0.22 eV level are 250 and 890 meV, respectively. The threshold energies obtained for the electron and hole emission from the Ev+0.33 eV level are 820 and 330 meV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347712
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  • 7
    Electronic Resource
    Electronic Resource
    Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1196-1198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient minority carrier lifetime and steady state diffusion length measurements have been performed on n-type HgTe/CdTe superlattices grown on CdZnTe(100) substrates. The n-type (100) superlattice sample shows a lifetime of 90–100 ns at 77–160 K which then decreases with increasing temperature down to 50 ns near 300 K. p-type HgTe/CdTe superlattices show normal behavior for temperature-dependent lifetimes. The measured lifetime is approximately 20 ns at 77 K and increases continuously to 85 ns at 300 K. An independent measurement of minority carrier diffusion length in a p-type HgTe/CdTe superlattice has led to an excellent agreement with a transient lifetime value of 66 ns at 200 K. The minority carrier diffusion length in a direction parallel to the interfaces indicates that the lateral transport properties are not much different from the transport properties of bulk HgCdTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107592
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  • 8
    Electronic Resource
    Electronic Resource
    Planar p-on-n HgCdTe heterostructure photovoltaic detectors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x〈y) heterostructure photodiodes with the p-on-n configuration. The material used for this demonstration was grown by molecular beam epitaxy. The p-on-n planar devices consist of an arsenic-doped p-type epilayer (y=0.28) on top of a long wavelength infrared n-type epilayer (x=0.225, λ=10 μm). The planar junctions were formed by selective pocket diffusion of arsenic deposited by ion implantation. The detailed analysis of the current-voltage characteristics of these diodes as a function of temperature show that they have high performance and that their dark currents are diffusion limited down to 52 K. The results also show that the R0A values for these devices are highly uniform at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108538
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  • 9
    Electronic Resource
    Electronic Resource
    HgCdTe double heterostructure injection laser grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1022-1024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While a variety of light-detecting devices have been made with HgCdTe, little has been done to apply this technology to light-emitting devices. We report here the successful fabrication and operation of the first HgCdTe injection laser. This stripe-geometry double-heterostructure laser was operated under pulsed current at temperatures between 40 and 90 K. At 77 K, the emission wavelength was 2.86 μm with a linewidth of 0.3 meV, and the pulsed threshold current density was 625 A/cm2. The double heterostructure, with a 1.4-μm-thick active layer, was grown and in situ doped by molecular beam epitaxy (MBE). The p+ and n+ confinement layers were doped with arsenic and indium, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106332
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  • 10
    Electronic Resource
    Electronic Resource
    p-i-n HgCdTe photodiodes grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2806-2808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful molecular beam epitaxy (MBE) growth of in situ arsenic- and indium-doped p-i-n HgCdTe double heterostructures. High-performance, short-wavelength, infrared (2.09 μm) photodiodes operating at 300 K have been fabricated with these double heterostructures. The observed current-voltage characteristics and quantum efficiency of these diodes can be explained by assuming that the current components are dominated by generation-recombination currents. These photodetectors exhibit quantum efficiencies of 78%. Growth of this kind of in situ doped structures indicates that the HgCdTe MBE technology has matured to the point where doped HgCdTe multilayer heterostructures can be grown and used to fabricate advanced infrared electronic devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104742
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