Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (24)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1366-1368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of strained-layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid-state lasers such as neodymium-doped yttrium aluminum garnet. A structure having 50 periods of 100 A(ring) InAsyP1−y quantum wells with 100 A(ring) InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104310
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Optoelectronic device mapping using differential imaging techniques (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3837-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mapping technique has been developed that uses differential imaging to characterize semiconductor optoelectronic devices. Although the technique was developed for examination of optical modulators, it has been extended to provide information on the uniformity and bandgap of any material through which one can transmit light. The sharpness of the bandedge, maximum absorption strength, and the film thickness determine the sensitivity of the technique for any particular application. For example, the bandedge sensitivity in 100 periods of InGaAs/GaAs multiple quantum wells was ±20 μeV and can be detected at each location in the field of view in under three minutes. This technique has been applied to modulators designed using strained layer materials for use at a 1-μm operating wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349187
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8426-8428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant difference between beryllium and carbon distribution in GaAs after zinc diffusion is presented. It is shown that grown-in carbon is stable and remains localized even after zinc diffusion, whereas grown-in beryllium diffuses very rapidly in the presence of diffusing zinc. This effect can be attributed to the difference in the crystal lattice site which the dopant occupies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347413
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Chemical beam epitaxial growth of strained carbon-doped GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of the growth characteristics of GaAs by chemical beam epitaxy using trimethyl-Ga and arsine. The growth rate behaviors as a function of temperature, As overpressure, and alkyl arrival rate are qualitatively similar to those using triethyl-Ga with differences that can be explained by differences in the alkyl-Ga bond strength. A unified description of the growth kinetics assuming a unimolecular reaction mechanism is possible. Lattice parameter is found to decrease with increasing carbon concentration. A high quality GaAs/GaAs:C doping superlattice has been prepared. Although the composition modulation is too small for x-ray diffraction measurement, the structural deformation gives rise to satellite peaks with order n up to ±7 observed for the first time. X-ray analysis of the superlattice after annealing has been employed to study the carbon diffusion in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103974
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Enhanced diffusion of Si due to He ion implantation in Si-delta doped GaAs layers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2657-2659 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced diffusion of Si due to He ion implantation in Si-delta doped GaAs layers has been observed by the capacitance-voltage technique. After an 800 °C anneal, an increase as large as an order of magnitude in the diffusion coefficient compared to thermal diffusion was observed. We also observe a decrease in the integrated sheet carrier concentration as a result of the He implants, and the decrease appears independent of annealing time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102844
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Is the cation sticking coefficient unity in molecular beam epitaxy at low temperature? (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1425-1427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using identical Ga flux density, we have measured the growth rate difference between GaAs and GaSb. The large discrepancy of 15% seems to suggest a change in the sticking coefficient of Ga when different group V species are involved. However, when lattice parameters are taken into account correctly, the discrepancy appears to be a natural consequence because fewer Ga atoms are needed to complete a monolayer on the GaSb surface. Similar results are also observed for the growth of Al(Sb,As) and In(Sb,As). This points to the possible systematic error in the estimation of ternary composition, such as InGaAs, by adding the growth rates of binary constituents InAs and GaAs without correction for change in lattice constants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103455
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Chemical beam epitaxial growth of InAs using trimethylindium and arsine (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2219-2221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth study of InAs by chemical beam epitaxy. Growth conditions for high quality epilayer has been determined from in situ reflection high-energy electron diffraction measurement, surface morphology, photoluminescence, and Hall measurement. The growth rate measurement shows that the pyrolysis characteristics of trimethylindium are qualitatively similar to that of triethylgallium which have previously been simulated by a surface chemical kinetics model. The boundary condition between In- and As-stabilized surface in the previously unexplored temperature range of 520–560 °C gives an activation energy of 3.1 eV for the As desorption from the InAs surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102972
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1688-1690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Te evaporated from a Sb2Te3 compound source has been used to dope GaSb grown by molecular beam epitaxy. Te concentrations up to 2×1019 cm−3 followed a simple Arrhenius behavior with respect to source temperature. Efficient incorporation of Te remained insensitive to growth temperature until above 540 °C. Carrier density was found very close to Te doping level up to about 2×1018 cm−3. Above that, electron mobility as well as crystallinity deteriorated with increasing Te concentration. A dependence of surface reconstruction on Te doping level was observed. A complete change from (1×3) to (2×1) pattern occurred when Te concentration considerably exceeded its solubility limit in GaSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103118
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Surface cleaning of GaAs by in situ chemical beam etching (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3368-3370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical beam etching using AsCl3 has been shown to provide accurate etch rate control at the atomic level, mask feature transfer at submicron scale, and a clean damage-free surface for regrowth. The etching process can be maintained in a two-dimensional fashion, if the etching conditions are designed to enable efficient cation diffusion that smooths the microroughness. In this work, we show from etching the heavily Be-doped GaAs surface that the in situ etching prior to growth is potentially a useful method for etch cleaning the surface. However, the effectiveness of this method depends on the ability to form volatile species with the contaminant in competition with the formation of group III chloride. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112394
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 448-450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction has been used to monitor the layer-by-layer removal of GaAs during chemical beam etching. The etching is accomplished by injecting AsCl3 gas directly into the growth chamber at a temperature typical for the growth. The development of a spotty pattern provides an early indication of surface roughness. A roughening mechanism of the etched surface due to a sluggish cation diffusion is identified. A migration enhanced etching method has been investigated in the etching of InP using AsCl3, which results in mirror like morphology. A two-dimensional etching mechanism and a in situ monitoring technique at atomic scale are essential for a true monolayer etching technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112329
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...