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  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Time dependence of radiation-induced generation currents in irradiated InGaAs photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1629-1635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354812
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7244-7249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354012
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy of irradiated p-type InP grown by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1435-1439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented of a deep level transient spectroscopy study of radiation-induced defects in p-type (Zn-doped) InP grown by metalorganic chemical vapor deposition. Three major hole traps (H3, H4, and H5) and two electron traps (EA and EB) were observed. The electron trap structure in particular is significantly different from that reported in the literature for p-type InP grown by other methods. Activation energies of 0.22 eV (EA) and 0.76 eV (EB) have been measured, and capture cross sections (σ∞) of 4.4×10−15 cm2 (EA), and 1.4×10−12 cm−2 (EB) have been determined. The H5 center has a thermally activated capture cross section with an energy barrier of 0.35 eV. The measured injection annealing rate of the primary hole trap (H4) was different than previously observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347284
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of carrier concentration on the properties of irradiation-induced defects in p-type indium phosphide grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4201-4207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to monitor the effect of carrier concentration on the properties of radiation-induced defects in InP n+p mesa diodes grown by metalorganic chemical vapor deposition. The activation energy Ea for hole emission from H4 and H5 centers and the injection-enhanced annealing rate of H4 at 200 K have been measured as a function of carrier concentration NA over the range ∼1×1016– 4×1017 cm−3. The measured values of Ea decrease with increasing NA in a way that can be semi-quantitatively explained by a combination of the Frenkel–Poole effect and phonon-assisted tunneling produced by the electric field in the junction. The results suggest that hole emission from H4 and H5 centers takes place to maxima in different valence bands. The injection-enhanced annealing rate of H4 centers increases with increasing NA at low concentrations, but approaches a maximum value near NA ∼ 1017 cm−3, indicating a limiting dopant (Zn) concentration for impurity-enhanced defect annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351386
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    Paper (German National Licenses)
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