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  • 1
    Electronic Resource
    Electronic Resource
    Targeting of adoptively transferred experimental allergic encephalitis lesion at the sites of Wallerian degeneration (1990)
    Springer
    Acta neuropathologica 80 (1990), S. 521-526 
    Details
    ISSN: 1432-0533
    Keywords: Major histocompatibility complex class II ; Wallerian degeneration ; Microglia ; Autoimmune disease ; Experimental allergic encephalitis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary To clarify the implication of the major histocompatibility complex class II (Ia) antigen induction in microglia following Wallerian degeneration in the central nervous system (CNS), experimental allergic encephalitis (EAE) was adoptively transferred to Lewis rats in which Ia antigens had been induced in microglia at the sites of Wallerian degeneration. In addition to randomly distributed typical EAE lesions, the recipient rats developed distinct inflammatory lesions in accord with the distribution of Ia-positive microglia; i.e., in the ipsilateral thalamus after cortical cryoinjury, and in the ipsilateral optic nerve, the contralateral optic tract and superior colliculus after unilateral eye ball enucleation. Thus, the EAE locus may be targeted by this approach. The inflammatory response was inducible by transfer of myelin basic protein-stimulated lymphocytes but not by transfer of phytohemagglutinin-stimulated or non-stimulated lymphocytes. When examined using monoclonal antibody surface markers; OX-6 for Ia antigen, W3/13 for pan T lymphocyte and OX-8 for cytotoxic/suppresser T lymphocyte, the types of lymphocytes in these lesions did not differ from those in ordinary EAE lesions in the spinal cord. The potential role of non-immunologically induced Ia-positive cell clusters that serve as a target for autoimmune CNS diseases was discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00294613
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  • 2
    Electronic Resource
    Electronic Resource
    Tachykinin-evoked Release of Neurotransmitters from Isolated Spinal Cord of the Newborn Rat (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 632 (1991), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1991.tb33109.x
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  • 3
    Electronic Resource
    Electronic Resource
    Photon-gated persistent spectral hole burning by electron transfer from a doped donor to an acceptor branched to a host polymer matrix (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 374-379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-color photon-gated persistent spectral hole burning (PSHB) via donor-acceptor electron transfer is reported in systems where the acceptor, 10-chloroanthracene, was intentionally branched to a side chain of the poly(methylmethacrylate) (PMMA) host polymer while the donor, metal-free tetraphenylporphine, was dispersed in the polymer. The systems, which had an acceptor concentration of up to 10−1 M, were prepared without aggregation of the acceptor. Spectral holes were burnt in the Qx(0,0) absorption band of the donor when the systems were simultaneously irradiated with a frequency-selective excitation (duration: 500 ps; energy: 200 nJ/cm2) and a gating excitation (wavelength: 514.5 nm; duration: 33 ms; energy: 14 μJ/cm2). The difference absorption spectrum between the unburned absorption spectrum and one recorded after photon-gated PSHB has confirmed that the hole formation mechanism is donor-acceptor electron transfer from a photoexcited donor to a ground-state branched acceptor. The thermal stability of burnt holes measured with a temperature cycling experiment increased when the acceptor was branched into PMMA. The effect of acceptor branching on the PSHB characteristics is discussed with reference to those for an acceptor-doped system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353858
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties and read/write characteristics of Co-Cr-(Pt,Ta)/ (Cr-Ti,Cr) thin film media : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5569-5571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Cr-Ti underlayer is found to enhance the in-plane coercive forces of Co-Cr-Pt and Co-Cr-Ta films; the maximum coercive force was 3.5 kOe for (CoCr0.15)0.84Pt0.16/CrTi0.2. The crystallites of Cr-Ti grow in a more highly oriented and uniform manner than ones of Cr, and their lattice spacings are closer to those of Co alloys than Cr, improving the epitaxial growth of Co-alloy crystallites with c-axis in-plane oriented components on the Cr-Ti underlayer. The crystalline anisotropy constant of Co-Cr-Pt with a high Pt concentration is found by torque measurement to be larger than that of Co-Cr-Ta. These can produce extremely high coercive forces in Co-Cr-Pt/Cr-Ti. The C/Co-Cr-Pt/Cr-Ti thin film media with high coercive forces show excellent read/write characteristics; the linear densities at 50% signal drop are very high, 175 and 101 kFCI, for the C/Co-Cr-Pt/Cr-Ti media at head-to-magnetic layer spacings of 0.01 and 0.07 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353653
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopic study of the chemical vapor deposited W/Al interface (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 749-751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the amount of aluminum trifluoride (AlF3) piled up at the interface of chemical vapor deposited tungsten and the aluminum under layer on the deposition time and subsequent annealing in ultrahigh vacuum (UHV) or in monosilane (SiH4) gas has been studied. AlF3 is formed by the reaction of the aluminum under layer with tungsten hexafluoride (WF6) during the initial state of tungsten chemical vapor deposition. Tungsten was deposited on an Al layer under selective deposition conditions by SiH4 reduction at 250 °C. X-ray photoelectron spectroscopy measurement reveals that the amount of AlF3 decreases with an increase in the tungsten deposition time and that the reduction of AlF3 by volatilization of aluminum fluorides, which occurs at higher temperatures ((approximately-greater-than)400 °C) is not observed at low temperature (270 °C). Annealing in SiH4 gas after the tungsten deposition was effective to reduce the amount of AlF3 compared with annealing in UHV. This result and thermochemical data would suggest that the dependence of the amount of AlF3 on the tungsten deposition time is explained by the reduction of AlF3 with hydrogen atoms supplied from the dissociation of SiH4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355246
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of inorganic fillers in visible-light-cured dental composite resins (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of oral rehabilitation 19 (1992), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Inorganic fillers in seven visible-light (VL)-cured dental composite resins were examined for their size, composition, phase and content, employing the following analytical instruments. SEM observations indicated that five samples could be classified into the hybrid type while the remaining two belonged to micro-filled and sub-micron types. EDX analyses revealed that five samples contained BaO while others lacked BaO. XRD analyses showed that three were in vitreous phase, two were in the crystalline phase and two were mixtures of both. DTG thermal analyses indicated that the hybrid type composites had the higher inorganic filler content (wt%) than the composites of two other types.In conclusion, wide varieties exist in the inorganic fillers in VL-cured dental composite resins currently utilized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2842.1992.tb01578.x
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  • 7
    Electronic Resource
    Electronic Resource
    Luminescence in crosslinked polyethylene at elevated temperatures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5149-5153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical treeing is often responsible for the breakdown of insulating materials used in power apparatus such as high-voltage transformers, cables, and capacitors. Insulation, such as crosslinked polyethylene (XLPE), used in underground high-voltage cables usually operates at temperatures above ambient. This paper describes the characteristics of luminescence, emitted prior to electrical tree inception, at a crosslinked polyethylene-semiconducting material (XLPE-semicon) interface held above room temperature. Use of a sensitive light detection system showed that XLPE subjected to elevated temperatures emits luminescence even without voltage application. This light was attributed to thermoluminescence which decreased with the decrease in the concentration of the crosslinking by-products present in the polymer. The spectra of thermoluminescence were only in the visible range. On the other hand, electroluminescence occurred when the XLPE-semicon interface was held above room temperature and subjected to high electric stress. This light did not depend on the concentration of the crosslinking by-products and the spectra of electroluminescence were in the visible and the ultraviolet ranges. It is proposed that XLPE-semicon interface held at elevated temperature and subjected to long-term voltage application initially emits both thermoluminescence and electroluminescence. As the crosslinking by-products exude out of the polymer, thermoluminescence decreases with time and ultimately ceases, but electroluminescence occurs as long as the voltage is applied to the polymer. Although the intensity of electroluminescence emitted at high temperature was lower than that emitted at ambient, sufficient ultraviolet radiation was emitted. The ultraviolet radiation could photodegrade the polymer and lead to electrical tree inception.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354277
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  • 8
    Electronic Resource
    Electronic Resource
    Photon-gated persistent spectral hole burning by donor-acceptor electron transfer in tetraphenylporphine/halogenated anthracene systems (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4671-4678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photon-gated persistent spectral hole burning was observed for metal-free tetraphenylporphine with halogenated anthracene derivatives in poly(methylmethacrylate) or poly(ethylene) at liquid-helium temperatures. The hole formation yield was markedly dependent on the polymer matrices and the sample composition as well as on the gating wavelength. The irreversible broadening of holes in the systems measured by temperature cycling experiment was smaller than that by proton tautomerization of tetraphenylporphine. We concluded that the hole formation mechanism is donor-acceptor electron transfer on the basis of combined analysis of the matix and acceptor concentration dependence of hole formation yield, the action spectrum of the gating photon and the photoproduct spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349058
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic properties of 1% Al-iron and its applications : 35th Annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5927-5929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study was carried out to improve permeability and coercivity of pure iron without decreasing its saturation magnetization. It was found that about 1-wt % addition of aluminum in combination with a high-temperature annealing process greatly increases its permeability (μm) up to 60 000, which is close to that of Permalloy B, and reduces its coercivity (Hc) to 0.2 Oe without decreasing the high-saturation magnetization of pure iron. This marvelous effect of the 1-wt %-Al addition can be attributed to a stabilization of the ferrite phase which enables ferrite grains to coarsen drastically due to abnormal grain growth during the high-temperature annealing. The ferrite stabilization also helps to avoid both residual strain and grain refining due to the austenite-ferrite phase transformation, which are thought to be undesirable for soft magnetic properties. In the present paper, the performance of this Fe–1-wt %-Al soft magnetic alloy, and an example of its practical application to the magnetic shielding, will be described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347818
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of ball-forming conditions on the hardness of copper balls (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5610-5614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effect of ball-forming conditions on the microstructure and the hardness of balls has been investigated in order to obtain soft balls suitable for a reliable ball-bonding process using copper wire. Copper balls formed in a room-temperature shield gas are found to be harder by 6 Hv than fully annealed copper wires of the same purity. This is caused by many dislocation loops which are generated in balls due to inclusion of gaseous impurities from the atmosphere and due to rapid solidification. On the other hand, copper balls formed in a shield gas heated above 175 °C are found to be softer by the amount of 4.5 Hv than balls formed in a room-temperature shield gas. This is due to disappearance of dislocation loops caused by the reduction of solidification rate and by elimination of gaseous impurities from the balls during solidification. Impurities, especially oxygen, are found to have a strong influence on the hardening of copper balls. From these results, we conclude that copper balls formed in a shield gas heated at 175 °C are suitable for mass production.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346972
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