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  • 1990-1994  (17)
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  • 1
    Electronic Resource
    Electronic Resource
    Origin of n-type conductivity of low-temperature grown InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 600-602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the PIn antisite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357052
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  • 2
    Electronic Resource
    Electronic Resource
    High dose Cl implantation in ZnSe: Impurity incorporation and radiation damage (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1378-1383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characteristics of ZnSe thin films grown by organometallic vapor phase epitaxy and implanted heavily with Cl ions (5×1015 and 1×1016/cm2) were investigated using ion beam techniques, x-ray diffraction, and Raman spectroscopy. We have found that although the as-implanted ZnSe layers were severely damaged, no amorphous layer was formed with an implant dose as high as 1×1016 Cl ions/cm2. Crystalline damage in the ZnSe layers was not fully removed even after annealing at 700 °C for 10 s. Ion channeling reveals that after annealing over 50% of the Cl atoms sit substitutionally in the lattice and they are preferentially located in the Se site. However, a significant fraction of the substitutional Cl are found to be slightly displaced from the normal Se sites. The projected displacement was found to be ≈0.2 A(ring). Electrical measurements and Raman spectroscopy results suggest that a large concentration of Zn vacancies (VZn) are present in the annealed samples. We believe that the Cl displacement and the low conductivity in these samples are due to the formation of (ClSe−VZn) complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356417
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  • 3
    Electronic Resource
    Electronic Resource
    Lattice location of diffused Zn atoms in GaAs and InP single crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2998-3006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 1020 cm−3 for GaAs, but the maximum concentration for InP appears at mid 1018 cm−3. The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn3P2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348613
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of coimplantation on the electrical activity of implanted carbon in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7118-7123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radiation damage and stoichiometry on the electrical activity of carbon implanted in GaAs are studied. Damage due to implantation of an ion heavier than C increases the number of C atoms which substitute for As (CAs). Creation of an amorphous layer by implantation and the subsequent solid phase epitaxy during annealing further enhances the concentration of CAs. However, the free carrier concentration does not increase linearly with increasing concentration of CAs due to compensating defects. Activation of implanted C is maximized by maintaining the stoichiometry of the substrate which reduces the number of compensating defects in the crystal. Under optimum conditions for carbon implanted at a dose of 5×1014 cm−2, the carbon acceptor activity can be increased from 2% to 65% of the total implanted carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355027
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of rapid quenching on the impurity site location in Zn-diffused InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 86-90 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice locations of Zn atoms in heavily Zn-doped InP single crystal have been investigated by ion channeling techniques. The InP samples were rapidly quenched in diffusion pump oil after high-temperature Zn diffusion. Ion channeling experiments performed along various major crystal axes suggest that a large fraction (20%–30%) of the Zn atoms are in the tetrahedral interstitial position in the InP lattice. It has been found that although the maximum hole concentration is not significantly affected by the cooling rate, there is a substantial increase in the incorporation of Zn on substitutional and tetrahedral interstitial lattice locations in the rapidly cooled samples as compared to the slowly cooled samples. The consequences of these results for understanding the mechanisms leading to the saturation of the free-hole concentration in compound semiconductors are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355202
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  • 6
    Electronic Resource
    Electronic Resource
    Annealing studies of low-temperature-grown GaAs:Be (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1699-1707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isochronal and isothermal annealing characteristics of acceptor-doped GaAs:Be grown at low substrate temperatures (300 °C) by molecular-beam epitaxy (LTMBE) have been studied. The Be was introduced in a range of concentrations from 1016 to 1019 cm−3. Electrical measurements of as-grown material up to the highest Be concentration of 1019 cm−3 show that no free holes are contributed to the valence band even though Raman spectroscopy of the Be local vibrational mode indicates that the majority of the Be impurities occupy substitutional sites. It is proposed that Be acceptors are rendered inactive by the high concentration of AsGa-related native donor defects present in LTMBE material. The concentration of AsGa-related defects in the neutral charge state was estimated from infrared absorption measurements to be as high as 3×1019 cm−3. A distinct annealing stage at 500 °C, similar to that found in irradiation-damaged and plastically deformed GaAs, marks a rapid decrease in the concentration of AsGa-related defects. A second annealing stage near 800 °C corresponds to the activation of Be acceptors. The presence of gallium vacancies VGa was investigated by slow positron annihilation. Results indicate an excess concentration of VGa in LTMBE layers over bulk-grown crystals. Analysis of isothermal annealing kinetics for the removal of AsGa-related defects gives an activation energy of 1.7±0.3 eV. The defect removal mechanism is modeled with VGa-assisted diffusion of AsGa to As precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351200
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of scattering by native defects on electron mobility in modulation-doped heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1638-1640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of scattering by native defects on carrier mobility in modulation-doped heterostructures is calculated. The concentration of the defects is determined using the amphoteric native defect model. It is shown that the Fermi level induced reduction of the defect formation energy leads to an increased incorporation of native defects and reduced mobility in AlGaAs/GaAs inverted modulation-doped heterostructures. This new mechanism explains the experimentally observed difference in the values of electron mobilities in normal and inverted modulation-doped heterostructures. The effects of native defects on the carrier mobilities in heterostructures based on other semiconductor systems are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105150
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  • 8
    Electronic Resource
    Electronic Resource
    Absolute pressure dependence of the second ionization level of EL2 in GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1143-1145 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of deep level transient spectroscopy experiments with the second ionization level of the double donor defect (EL2) under uniaxial stress in p-type GaAs. We measure the shift in the hole emission rate as a function of stress applied in the [100] and [110] directions. By modeling the valence band with two independently displacing bands and appropriately derived effective masses, we determine the absolute hydrostatic pressure derivative of the defect to be 39±15 meV GPa−1. The shear contribution is negligible. These results are very different from those obtained for the first ionization level, which has a much higher absolute pressure derivative of 90 meV GPa−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102544
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  • 9
    Electronic Resource
    Electronic Resource
    Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2383-2385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65±3%, corresponding to a sheet free-carrier concentration of 3.5×1014 cm−2, was achieved by coimplanting Ga and annealing at 950 °C for 10 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107004
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  • 10
    Electronic Resource
    Electronic Resource
    Amphoteric substitutionality and lattice distortion of Ge in InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1543-1545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electrical and structural properties of InP implanted with Ge ions (2×1015/cm2). The implantation was performed at both room temperature (RT) and liquid nitrogen temperature (LNT). After annealing at 850 °C for 5 s, both sets of samples exhibited n-type conductivity. The n-type activation efficiency in the RT implanted sample was about a factor of 2 higher than that in the LNT sample (15% and 8%, respectively). Extended x-ray absorption fine structure spectroscopy (EXAFS) shows direct evidence of the amphoteric substitutionality of the Ge atoms in InP for both samples. The ratios of Ge on In sites to Ge on P sites, derived from the EXAFS results, are consistent with the electrical behavior of the samples. The EXAFS results also reveal that the Ge—In and Ge—P bond lengths in the RT sample are very similar to their theoretical values, but are very different from the original In—P bond length. A relaxation in the Ge—In bond is observed in the LNT sample, resulting in a Ge—In bond length very similar to the original In—P bond length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111886
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