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  • 1990-1994  (17)
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  • 1
    Electronic Resource
    Electronic Resource
    Electrical and structural properties of silicon layers heavily damaged by ion implantation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 61-68 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high-dose silicon and arsenic ion implantation on the electrical and structural properties of silicon layers are investigated. Combining electrical, transmission electron microscopy, and triple-crystal x-ray-diffraction measurements made it possible to characterize the effects of thermal annealing both on defect annihilation mechanisms and on electrical doping activation. It is clearly shown that a low-temperature (≤450 °C) electrical activation process is taking place in the amorphous surface layer induced by high-dose ion implantation. This phenomenon is found to be completely independent of the recrystallization regrowth by solid phase epitaxy which occurs at higher temperature. This electrical activation process is found to be well described by a local relaxation model involving point defect migration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352147
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Properties of the TiSi2/p+n structures formed by ion implantation through silicide and rapid thermal annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 73-77 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicided p+n junctions and contact resistivity test structures were formed by implantation of BF2 through TiSi2 in crystalline as well as in Si+ or Ge+ preamorphized silicon. A subsequent rapid thermal annealing at 950 °C in nitrogen atmosphere was performed to activate the dopant, to remove the ion implantation damage, to increase the silicide conductivity, and to improve the electrical characteristics of the junction. Very low leakage currents and low contact resistivities were measured on samples without preamorphization. With Si+ or Ge+ implantation the channeling of boron was suppressed but residual defects below the original amorphous-crystalline (a-c) interface gave rise to an increased leakage current. A Ti-related defect level was found by deep level transient spectroscopy in the silicon substrate up to a depth of some micrometers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352097
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Raman investigations of elastic strain relief in Si1−xGex layers on patterned silicon substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7223-7227 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The appearance of an elastic strain relief in narrow mesalike patterned Si1−xGex heteroepitaxial layers is shown. A Si1−xGex layer was deposited on a mesalike patterned Si(001) substrate by molecular-beam epitaxy. The germanium concentration was x=14%, the layer thickness h=96 μm was several times larger than the critical thickness hc. The layers on top of the mesas were investigated by Raman microscopy. The Raman line shifts of the wider mesas and their dislocation densities agree with the predicted strain reduction by generation of misfit dislocations. On the narrow mesas an additional shift of the Raman lines toward the unstrained alloylike Raman frequency was measured. It is caused by an elastic strain relief on top of the narrow mesas. An estimation of the expected Raman line shifts is given assuming an uniaxially strained SiGe layer. The calculated line shifts agree sufficiently with the measured values. The elastic strain relief reduces the free energy of the layer-substrate system, reduces the stress in the pseudomorphic layer, and stabilizes the structure. The effect arises if the mesas are narrower than 2 μm. It is therefore of interest in all submicrometer technologies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355335
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x-ray diffraction (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3177-3180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si1−xGex layers, grown by molecular beam epitaxy (MBE) and by chemical vapor deposition (CVD) on Si(001) substrates, with thicknesses between 20 and 50 nm and Ge contents from 4% to 23% were investigated by micro Raman backscattering, x-ray double crystal diffractometry, and transmission electron microscopy. A quite simple phenomenological model was developed to derive the Raman shift of the Si–Si mode as a function of the germanium content for the two limiting cases, the pseudomorphically strained layer, and the alloy-like stress-free layer. A measure for the degree of relaxation can be obtained from the measured Raman shift and from the independently determined germanium content, using the results of the model. The degree of relaxation was determined for a number of CVD- and MBE-grown Si1−xGex layers. The as-grown pseudomorphic layers relax partially after annealing at 900 °C. The Raman scattering allows the monitoring of the development of relaxation during the semiconductor device processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354587
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray in situ observation of relaxation and diffusion processes in Si1−xGex layers on silicon substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2191-2196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is presented to simultaneously investigate in situ the relaxation and diffusion behavior of Si1−xGex layers on silicon substrates using a conventional x-ray powder diffractometer with a high-temperature attachment. The method allows the direct determination of the time and temperature dependence of the relaxation and of the maximum Ge content. The diffusivity of Ge in silicon was studied by x-ray diffraction and secondary ion mass spectroscopy measurements. A nonlinear dependence of the effective diffusion coefficient on the Ge content was deduced by solving a diffusion equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357633
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray reflection properties of annealed silicon single crystals : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 907-910 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a series of x-ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E〈50 keV using sealed tube sources. To analyze the origin of the enhanced reflectivity of this material compared to perfect, FZ-grown silicon, double and triple crystal diffractometer measurements were carried out. The results are discussed with regard to the application of ACS for monochromatization of synchrotron radiation in the mentioned energy range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143775
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3440-3442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−x−yGexCy layers have been grown on Si(001) substrates with molecular beam epitaxy and investigated with transmission electron microscopy and x-ray diffraction. We show that it is possible to adjust the strain in pseudomorphic SiGe layers by adding small amounts of carbon. A simple linear extrapolation between the different lattice constants opens the possibility to predict the SiGeC structure in dependence on the carbon content. It is possible to grown epitaxial SiGeC layers with up to 2% carbon. Larger carbon concentrations lead to a crystallographic degradation of the layers. We were able to grow the first pseudomorphic SiGeC layer on Si(001) that is under tensile stress. These layers exhibit a lattice plane spacing in growth direction smaller than that of silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111235
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  • 8
    Electronic Resource
    Electronic Resource
    Independent determination of composition and relaxation of partly pseudomorphically grown Si-Ge layers on silicon by a combination of standard x-ray diffraction and transmission electron microscopy measurements (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2051-2053 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concentration of Ge and the relaxation of partly pseudomorphically grown thin SiGe layers on Si can be found independently by a combination of standard x-ray double-crystal diffractometry (DCD) and transmission electron microscopy (TEM). DCD and TEM determine the lattice constant variations of the netplanes parallel and perpendicular to the surface from the angular distance between substrate and layer peak and from the average distance of misfit dislocations or the distance of Moiré fringes, respectively. The method is demonstrated for three samples with low, medium, and high Ge content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109476
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray diffraction studies of annealed Czochralski-grown silicon. I. Double-crystal diffractometry (1993)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 26 (1993), S. 185-191 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: X-ray reflection properties are reported of annealed Czochralski-grown silicon (ACS) single crystals at photon energies between 8 and 50 keV, studied by double- and triple-crystal diffractometry (DCD and TCD, respectively) and with X-radiation from sealed-tube sources. The report is divided into two parts. In this paper (paper I), the results of double-crystal topography and rocking-curve measurements are discussed in detail with regard to the application of ACS for the monochromatization of synchrotron X-radiation in the above-mentioned energy range. The analysis of the defects which enhance the reflectivity of ACS compared with that of perfect float-zone-grown silicon, carried out by TCD measurements and transmission electron microscopy, is presented in the following paper (paper II). [Zaumseil, Joksch & Zulehner (1993). J. Appl. Cryst. 26, 192–197].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889892009956
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray diffracton studies of annealed Czochralski-grown silicon. II. Triple-crystal diffractometry (1993)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 26 (1993), S. 192-197 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: This paper reports a series of X-ray triple-crystal diffractometry (TCD) measurements performed on annealed Czochralski-grown silicon (ACS) single crystals to investigate in more detail the reasons for the observed broadening of double-crystal diffractometer rocking curves described in the previous paper [Joksch, Zaumseil & Zulehner (1993). J. Appl. Cryst. 26, 185–191]. It is shown that diffuse scattering by structural defects created during the high temperature heat treatment is responsible for the changes in the reflection properties. With TCD, the dominant defects are identified as stacking faults on (111) planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S002188989201001X
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