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  • 1
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs distributed feedback structure with multiquantum well for surface-emitting laser (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 874-877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate laser emission by photopumping at room temperature from a distributed feedback structure for a surface-emitting laser constructed by alternating growths of a GaAs/AlGaAs multiquantum well and an Al0.7Ga0.3As layer using molecular-beam epitaxy. A threshold photoexcitation intensity lower than 3.1×105 W/cm2, a 34-nm longitudinal mode spacing, and a 2.3-nm peak width of the laser emission were observed for the 6-μm-thick multilayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337328
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  • 2
    Electronic Resource
    Electronic Resource
    Ionized Mg doping in molecular-beam epitaxy of GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1092-1095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular-beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have been achieved. Photoluminescence measurements suggest that the damage due to Mg-ion bombardment is negligible when the ion accelerating voltage (Va) (approximately-less-than)130 V. For higher Va , the damage can be removed by postgrowth annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336545
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of thermal annealing on Si-doped GaAs grown by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4826-4827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (∼4 K) photoluminescence has been studied on as-grown and thermally annealed Si-doped GaAs grown by molecular beam epitaxy. The peak intensities of the defect-related emissions, due to the defect-induced bound exciton (d, X) and the defect complex (d) are decreased by thermal annealing. On the other hand, Hall measurements show that free carrier concentrations are decreased only slightly by thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335302
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  • 4
    Electronic Resource
    Electronic Resource
    Electron traps in AlGaAs grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5062-5069 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep-level transient capacitance spectroscopy we have investigated deep electron traps in n-AlGaAs grown by molecular-beam epitaxy (MBE). The thermal activation energies of seven traps, labeled ME1–ME7, observed in this study increase with increasing Al content(x) up to the direct-indirect crossover point (x∼0.42), but show only a small change with further increases in Al content. Traps ME4–ME7 are dominant in samples with x≤0.2. Traps ME4–ME6 strongly depend on the growth ambient. The concentration of ME7 is almost independent of the ambient in the growth chamber but decreases rapidly with increasing growth temperature. ME7 is a native defect and can almost certainly be identified with the trap EL2 observed in bulk and vapor-phase epitaxially grown GaAs. Traps ME4–ME6 are probably formed by impurities involving oxygen such as CO, H2O, and AsO in the growth ambient. All of the traps, ME5–ME7 are clearly responsible for a decrease in the photoluminescence intensity of MBE grown AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338330
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  • 5
    Electronic Resource
    Electronic Resource
    Electron degradation and yields of initial products. IV. Subexcitation electrons in molecular oxygen (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3081-3086 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron slowing-down processes in molecular oxygen gas in the subexcitation domain (below the ionization threshold) are studied by using the Spencer–Fano (SF) equation and its simplification, the continuous-slowing-down approximation (CSDA), both in time-dependent and time-independent representations. Compared to the previously studied cases of N2 and CO2, O2 has the special features in its inelastic cross sections of (i) strong delta-function-like peaks in the vibrational excitation cross section below 1.3 eV and (ii) very low energy thresholds of electronic excitation channels. These features provide a stringent test for the CSDA. Indeed, our results clearly show for the first time that the CSDA fails even qualitatively to reproduce the electron degradation spectrum given by the exact SF method over the whole energy regime studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456652
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  • 6
    Electronic Resource
    Electronic Resource
    Self-matched high-voltage rectangular wave pulse generator (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 2116-2118 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the self-matched pulse generator, an efficient high-voltage generator which produces a rectangular wave pulse. It generates rectangular wave pulses with a duration from a few nanoseconds to a few microseconds. The waveform of the generated pulses is maintained regardless of the resistivity of the load. The principles of its operation and applications are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138430
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  • 7
    Electronic Resource
    Electronic Resource
    Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wells (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1864-1866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/Al0.22Ga0.78As single quantum wells with localized Si doping were grown by molecular beam epitaxy. Low-temperature (1.8, 4.2 K) photoluminescence due to excitons bound to Si donors, which were located at the center of wells, was observed. The binding energies of the exciton are 1.8–1.3 meV for well widths ranging from 7.4–15.4 nm, and substantially agree with the theoretical results obtained by Kleinman [Phys. Rev. B 28, 871 (1983)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336015
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  • 8
    Electronic Resource
    Electronic Resource
    Farber's lipogranulomatosis in siblings: light and electron microscopic studies (1989)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 121 (1989), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Two cases of Farber's lipogranulomatosis in siblings are reported. The clinical features included contractures of the limbs with swelling of the joints and subcutaneous nodules and erythematous infiltrated plaques. On histology there were many large foam cells in the dermis, and electron microscopy showed numerous large cells with round cytoplasmic lamellar and microtubular bodies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.1989.tb08222.x
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  • 9
    Electronic Resource
    Electronic Resource
    Bronchial responsiveness to methacholine during airway cooling in normal subjects (1986)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical & experimental allergy 16 (1986), S. 0 
    Details
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In order to investigate the effects of airway cooling on bronchial responsiveness in normal subjects, we measured bronchial responsiveness to inhaled methacholine with and without the inhalation of cold air. Two out of seven subjects showed an increase in baseline respiratory resistance (Rrs) during cooling of the airway but the other five subjects showed little change in their baseline Rrs. All subjects increased bronchial responsiveness to methacholine. Additionally, the threshold dose of methacholine decreased to one-third of the control dose with cooling of the airway. We speculate that airway cooling increased bronchial responsiveness to methacholine in normal subjects presumably due to increased vagal tone, increased alpha-adrenergic activity and/or a release of chemical mediators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2222.1986.tb01951.x
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  • 10
    Electronic Resource
    Electronic Resource
    Allergic contact sensitivity to quinophthalone (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Contact dermatitis 20 (1989), S. 0 
    Details
    ISSN: 1600-0536
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A 73-year-old patient, diagnosed as having seborrheic dermatitis, was patch tested with his hair preparations. The hair stick gave a positive reaction. Among its ingredients, D & C Yellow No. 11, from 0.0001% to 0.1%, and perfume showed positive reactions. D & C Yellow No. 11 was found to consist only of quinophthalone by chemical analyses. The concentration of quinophthalone in the hair stick was determined as 9.41 ppm w/w by high-performance liquid chromatography.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0536.1989.tb04653.x
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