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  • 1
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of a sputtered Bi-substituted Dy–Fe garnet-ferrite/hematite bilayer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5106-5108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing was performed after a Bismuth-substituted Dy iron garnet-ferrite (Bi2DyFe4GaO12) was deposited on a quartz glass substrate having a hematite underlayer, and the effect of the hematite underlayer on the magneto-optical characteristics of the garnet ferrite film was evaluated. The presence of the underlayer greatly improved the magneto-optical effect of the garnet film, but the amount of improvement depended on the hematite phase. Big improvement was obtained using underlayer phases that are easily crystallized, i.e., Fe3O4 and γ-Fe2O3 which have a spinel structure, but not with α-Fe2O3 which has a corundum structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369092
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  • 2
    Electronic Resource
    Electronic Resource
    Status of ion sources for the Heavy Ion Medical Accelerator HIMAC : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 962-964 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Heavy Ion Medical Accelerator in Chiba (HIMAC) at National Institute of Radiological Sciences (NIRS) is the first heavy-ion accelerator complex dedicated to cancer therapy. HIMAC is equipped with two kinds of ion sources. The PIG ion source is an indirectly heated cathode type, which is operated with a very low-duty factor. The ECR ion source has a single closed ECR zone with 10 GHz microwaves. Both sources realize good stability and reproducibility with easy operation, and satisfy the requirements for radiotherapy. They have been successfully used for clinical trials since June of 1994, and several tens of cancer patients have already been treated with 290–400 MeV/u carbon beams. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146784
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  • 3
    Electronic Resource
    Electronic Resource
    Polarization measurement of SR from a helical undulator using a quarter-wave plate for a wavelength of 12.8 nm : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1920-1922 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: At a wavelength of 12.8 nm, polarization states of nominally circularly polarized light emitted from a helical undulator and monochromatized by a grating monochromator were measured (KEK-PF BL-28A). With a transmission-type multilayer quarter-wave plate and a multilayer mirror polarization analyzer mounted on a beamline ellipsometer, all polarization parameters of the circularly polarized SR at various conditions were determined. The best degree of circular polarization after the grating monochromator was found to be as high as 0.95. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145758
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  • 4
    Electronic Resource
    Electronic Resource
    Longitudinal impedance tuner using new material FINEMET (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2988-2992 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We designed an impedance tuner consisting of an inductive material, FINEMET, to cancel the space charge impedance in the longitudinal direction. It was installed in the KEK Proton Synchrotron (PS) main ring. We observed the frequency shift of the coherent quadrupole oscillations and inferred the shift of the incoherent synchrotron oscillation. The total reactive impedance can be estimated as the coefficient between the shift and the beam intensity. The measured impedance is reduced from −j2475Ω to −j1182Ω by the impedance tuner which consists of 12 pieces of FINEMET cores. We demonstrated that the space charge impedance is compensated by the impedance tuner. This is the first time for FINEMET to be equipped with an accelerator component. One may think that the characteristics of FINEMET deteriorate under an environment with strong radiation generated by unavoidable beam loss. We have proved that the radiation dose not affect FINEMET even with a total neutron dose of 1.83×1012(n cm−2), which is considered to be the highest dose of the main ring. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149859
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of annealing, using a plasma-excited chemical vapor deposition SiN film as a cap, on the carrier density of AlGaAs/GaAs heterostructures and Si-doped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4401-4406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate how the mobility and carrier density of AlGaAs/GaAs two-dimensional electron gas are influenced by the fabrication process with plasma-excited chemical vapor deposition (plasma-CVD) SiN film. These properties are greatly reduced by annealing with plasma-CVD SiN film as a cap but are restored by reannealing after removing the SiN film. We further use capacitance-voltage measurements to investigate the influence of this same process on a more simplified structure, Si-doped GaAs layer. Annealing with a plasma-CVD SiN film changes the defect density of Si-doped GaAs in two, temperature dependent ways: annealing below 380 °C reduces deposition damage, and annealing above 300 °C produces new defects, which might be caused by the film stress. These new defects can be reduced by reannealing after removing the SiN film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359846
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  • 6
    Electronic Resource
    Electronic Resource
    1.3 μm InAsP compressively strained multiple-quantum-well lasers for high-temperature operation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4119-4121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature operation of InAsP-based laser diodes at 1.3 μm has been realized according to guidelines of a large conduction-band-offset material (ΔEc) with a large optical confinement factor (Γ). Using photoluminescence excitation spectroscopy measurements, it was found that the conduction-band offset of InAs0.52P0.48P/InGaAsP is the half of the band-gap energy difference (0.5 ΔEg), which is larger than that of conventional quaternary material systems. A strain-compensation growth technique enabled the fabrication of a large number of wells for large Γ. For broad-area laser diodes, the maximum operating temperature increased as the number of wells increased from 4 to 15. In buried heterostructure lasers with ten wells, with high-reflectivity coating on both facets, continuous-wave lasing operation at temperatures up to 150 °C was achieved with a characteristic temperature of 59 K (30〈T〈70 °C) demonstrating the suitability of InAsP for high-temperature operation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359497
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  • 7
    Electronic Resource
    Electronic Resource
    Time-resolved optical waveguide study of the reorientation in a nematic liquid crystal under applied electric field (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1135-1142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reorientation behavior of nematic liquid crystal molecules induced by an electric pulsed field was investigated by means of time-resolved optical waveguide spectroscopy (TROWS) which was developed to observe transient changes in dielectric constants and to measure the thickness of a thin dielectric medium. Time evolution of the waveguide mode patterns was successfully obtained by using TROWS, which records the reflectivity as both functions of the incident angle of laser light and the time from switching-on or -off of the external electric field. The transient dielectric tensor profile in the 4′-pentyl-4-cyanobiphenyl (5CB) layer both after switching-on and -off of the electric field could be precisely determined in a three-dimensional coordinate system by using Deuling's theory which treats the orientational deformation induced by an external electric field. Theoretical analysis of TROWS data clearly indicated that half of the 5CB molecules rotate clockwise in the plane defined by the rubbing direction and the substrate normal, and the other half rotates counter-clockwise in the same plane. The counter rotation compensates the effect of birefringence observed in the direction parallel and perpendicular to the rubbing direction and the reorientation kinetics could be well described by the Ericksen–Leslie equation. Relaxation behavior from homeotropic to planar orientation could be treated as an orientation diffusion process by applying a Gaussian distribution function to the maximum tilting angle at the middle of the cell. We report the usefulness of TROWS which provided more detailed information about the dynamics of the 5CB molecules. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363859
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  • 8
    Electronic Resource
    Electronic Resource
    New hydride vapor phase epitaxy for GaP growth on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1245-1247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium phosphide films are successfully grown on (100) Si substrates by a new hydride vapor phase epitaxy. Mixing of reactant vapors just above the substrate makes the growth rate as high as 50 nm/min even in the temperature range of 350–450 °C. This makes the two-step growth procedure applicable for growing a single domain GaP film on Si from H2-HCl-PH3-Ga reactants. An etch pit density of 7.5×106 cm−2 and a full width at half-maximum of 93 arcsec in a double-crystal x-ray rocking curve are achieved. Green light-emitting diodes with 565 nm peak wavelength are successfully fabricated using nitrogen-doped GaP films grown on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98693
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-induced fluorescence spectroscopy for the determination of the absolute density and spatial distribution of Si atoms in a SiH4-He-Ar glow discharge (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1050-1054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the absolute density and the spatial distribution of silicon atoms in a SiH4-He-Ar dc glow discharge measured by the laser-induced fluorescence method. The absolute sensitivity of the fluorescence-photon-counting system was calibrated by using the same system to measure Rayleigh scattering by Ar gas in the discharge chamber. The fluorescence quantum efficiency and the polarization degree of emitted light were measured to confirm the absence of excited-state quenching induced by collisions with the buffer-gas atoms. The measured spatial distribution profile of the ground-state silicon atoms is compared with that of the excited-state atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342476
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  • 10
    Electronic Resource
    Electronic Resource
    Primary low cerebrospinal fluid pressure syndrome with galactorrhea: findings at MR imaging (1996)
    USA/Oxford, UK : Blackwell Science Ltd
    Cephalalgia 16 (1996), S. 0 
    Details
    ISSN: 1468-2982
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A case of primary low cerebrospinal fluid (CSF) pressure syndrome with galactorrhea is reported. Magnetic resonance imaging demonstrated diffusely enhanced meninges, edematous brain, and enlarged pituitary gland. Coincidental enlargement of pituitary gland and edematous brain due to low CSF pressure compressed the pituitary portal system. The 1ow-perfused anterior lobe of pituitary gland would be the mechanism of galactorrhea.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1468-2982.1996.1602124.x
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