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  • 1
    Electronic Resource
    Electronic Resource
    Reduction of defects in laser-induced crystallized and amorphized silicon films using plasma hydrogenation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7377-7383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation of laser-crystallized and -amorphized films was investigated. The hydrogen concentration was determined to be 1.5 at. % using a method of laser-induced hydrogen effusion for 20-nm-thick crystallized films which were hydrogenated at 250 °C for 30 s. The defect density was reduced from 1×1017 to 4×1016 cm−3. The hydrogen concentration was 2.5 at. % for amorphized films of 12 nm-thickness. This low hydrogen concentration resulted in a low optical band-gap energy of 1.7 eV for amorphized films, while the width of the Urbach tail was 0.06±0.005 eV, which is close to that of hydrogenated amorphous silicon (a-Si:H) films fabricated using radio-frequency glow discharge (rf GD). The defect density of the laser-amorphized silicon films was reduced from 2×1020 to 4×1015 cm−3 eV−1 comparable to a-Si:H films fabricated by rf GD. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357962
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  • 2
    Electronic Resource
    Electronic Resource
    Solution properties of ionomers. 2. Simple salt effect (1989)
    s.l. : American Chemical Society
    Macromolecules 22 (1989), S. 754-757 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00192a040
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  • 3
    Electronic Resource
    Electronic Resource
    Extraction of infrared radiation from SPring-8 : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1543-1546 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Extraction of infrared beams from SPring-8 storage ring is investigated. SPring-8 is a third generation insertion device oriented synchrotron radiation source in x-ray region. It is noticeable, however, that a highly powerful radiation source in infrared region can be obtained from the bending magnet because of the large bending radius of 40 m. In this wavelength region, SPring-8 storage ring has a very sharp natural collimation in the vertical direction and the source size is very small. Extraction of infrared radiation in wavelength of 2–25 μm was designed. Source is a bending magnet and a water-cooled copper mirror is incorporated into the crotch laid just downstream by the bending magnet. The design of crotch and the transport system is carried out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143016
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  • 4
    Electronic Resource
    Electronic Resource
    Use of long straight sections of SPring-8 : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 355-358 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The SPring-8 project is in progress in Japan. The main facility is an 8 GeV storage ring dedicated to synchrotron radiation [H. Kamitsubo et al. (this conference)]. The main feature of the ring is in the free straight sections 30 m long. In this paper the design of the long straight sections and how to use them is described. The long free straights are achieved through two phases to make the commissioning of the ring smooth. In the second phase, the long free straight sections are available. These long straight sections have the following potential to realize (1) extremely high brilliance, (2) multiundulators with broadband, and (3) free electron lasers. The emittance of the stored electron beam can be reduced to subnano m rad at 4 GeV with damping wigglers. Three-order higher brilliance can be obtained around 4 keV. With these optics, three-dimensional simulation was performed for free electron lasers (FEL). The calculated gain was not so large in the practical peak current level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142754
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  • 5
    Electronic Resource
    Electronic Resource
    Bolometric measurements in JT-60 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1866-1868 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Radiation losses from the main plasma of the JAERI Tokamak-60 (JT-60) were measured by a 15-channel bolometer array and those from divertor chambers in the ion and electron drift sides were each measured by two bolometers. The bolometric detector consisting of three layers (5-μm-thick gold absorber, 7-μm-thick polyimide foil, and 0.1-μm-thick gold resistor grid) was developed for this measurement. In typical diverted discharges with NB heating, the ratios of power radiated from the main and divertor chambers to the absorbed power were approximately 10% and 20%, respectively. Intense poloidal asymmetries of radiated power localized near the X point outside the torus were observed in diverted discharges. The profiles of the radiated power were reconstructed by an Abel inversion with an asymmetric term. On the other hand, a poloidally asymmetric radiation band localized near the inner wall, "marfe,'' was observed for dense plasmas in limiter discharges with neutral beam heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140090
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  • 6
    Electronic Resource
    Electronic Resource
    6-GeV synchrotron radiation project : International conference on synchrotron radiation instrumentation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1719-1721 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper outlines the status of a 6-GeV synchrotron radiation designed at RIKEN. This facility consists of a main storage ring, a booster synchrotron, a 1.5-GeV preinjector linac, positron injection linacs, and others. The electronan GeV. The storage ring has a circumference of 1069.2 m and 7-m-long straight sections for insertion devices. The lattice of the main ring is a Chasman–Green-type one and has 36 periodicity. The low emittance (εx=8.2 nm rad) and large dynamic aperture are expected even with field errors and misalignments of magnetic elements. Three years of a preconstruction research and development period and 5 years of construction period are scheduled.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140937
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  • 7
    Electronic Resource
    Electronic Resource
    Surface reaction of diiodomethane with an aluminum(111) surface (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 2637-2641 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100185a045
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  • 8
    Electronic Resource
    Electronic Resource
    Etching of aluminum film by hydrogen atoms (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1793-1795 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction between hydrogen atoms and an ultrathin aluminum film (2 monolayer) on a Mo(111) substrate was studied by thermal desorption (TD) and Auger electron spectroscopy (AES). Through TD experiments for the hydrogen precovered aluminum films, desorption of aluminum hydride was observed at 370 K. It was confirmed that 1/3 monolayer of aluminum was desorbed as aluminum hydrides after a TD experiment for the aluminum film on which hydrogen was preadsorbed to a full monolayer coverage. The aluminum film was continuously etched at 410 K by a steady flow of hydrogen atoms. These results indicate the potential capability of hydrogen atoms as a selective etchant for aluminum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106203
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  • 9
    Electronic Resource
    Electronic Resource
    A new technique for diagnostics of a radio-frequency parallel-plate remote plasma (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 162-164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new parallel-plate remote plasma reactor was developed, containing a metal grid between the powered and the grounded electrode. Plasma parameters between the grid and a substrate holder have been measured in radio-frequency (13.56 MHz) argon plasmas using another grid with large surface area as a positive electrostatic probe. The electron density is lower than 106 cm−3 at rf power lower than 10 W; this demonstrates that the plasma is effectively confined. The electron energy distribution function is well approximated to a Maxwellian one. The electron temperature decreases as the pressure increases, and it is lower than 3 eV at pressures above 13.3 Pa, in agreement with electron temperatures in conventional plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112659
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  • 10
    Electronic Resource
    Electronic Resource
    SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1018-1020 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reactive evaporation of SiO in an oxygen atmosphere was investigated for forming a good interface of SiO2/Si. SiO2 films are formed at room temperature by evaporation of a SiO powder in an oxygen atmosphere with a flow rate of 2 sccm at a pressure of 1×10−4 Torr. The interface trapping density at SiO2/Si was lower than 5×1010 cm−2 eV−1. n- and p-channel Al-gate polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated at 270 °C with the present SiO2 films as a gate oxide and laser crystallized poly-Si films formed using a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.1 V (n-channel) and −1.2 V (p-channel), and a high carrier mobility of 450 cm2/V s (n-channel) and 270 cm2/V s (p-channel).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110956
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