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  • 1
    Electronic Resource
    Electronic Resource
    Moessbauer study of the kinetics of iron(3+) photoreduction on titanium dioxide semiconductor powders (1985)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 3076-3080 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100260a025
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  • 2
    Electronic Resource
    Electronic Resource
    Studies of chemical reactivity in the condensed phase. IV. Density dependent molecular dynamics simulations of vibrational relaxation in simple liquids (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 6687-6696 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Molecular dynamics simulations of the photodissociation/recombination process for iodine in liquid xenon at several densities are reported in this paper. These simulations were performed to aid in the understanding and interpretation of recent picosecond experimental investigations on model chemical reaction systems. From these calculations, it was found that geminate recombination occurs primarily within a few picoseconds at all densities considered. This is in agreement with previous molecular dynamics simulations with significantly smaller systems, and with the current interpretation of experimental results. Simulated iodine ground electronic state vibrational relaxation times range from about 1 ns at the lowest density to approximately 250 ps at the highest density reported here. In addition, the functional form of the decay of the average iodine vibrational energy was observed to be nearly independent of density. This result is discussed in terms of simple gas phase isolated binary collision models. Various force correlation functions projected onto the iodine vibrational coordinate were also examined, and indicate that the iodine molecule significantly perturbs the local solvent environment. These force correlation functions may be helpful when assessing the usefulness of liquid phase theories of vibrational relaxation of highly excited molecules. Finally, the simulation results on iodine vibrational relaxation are compared with the available experimental data. These comparisons indicate that the molecular dynamics calculations overestimate the rate of vibrational relaxation over the lower third of the iodine ground electronic state potential surface, and that the efficiency of V–TR transfer, relative to V–V transfer, may have been underestimated. The sensitivity of these results to several system parameters are analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455341
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  • 3
    Electronic Resource
    Electronic Resource
    Childhood dysgraphia. Part 2. A study of hand function (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Child 15 (1989), S. 0 
    Details
    ISSN: 1365-2214
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Summary Sixty-six children were studied who had presented to the paediatric neurology service over a 2-year period, because they were failing to make the expected progress in mainstream school. Their parents were interviewed with a structured questionnaire and the children had a full neurodevelopmental examination which included a detailed assessment of hand function. Thirty-nine per cent of the children had a specific dysgraphia and there was a male predominance. The different populations of affected children had distinguishing characteristics. A family history of written language skill difficulties was elicited for most of the children with a developmental spelling dysgraphia, but it was uncommon in the children with an acquired spelling dysgraphia or motor dysgraphia. Slow speech development occurred frequently in developmental and acquired spelling dysgraphic children. Mixed handedness was significantly commoner in dysgraphic children who had acquired problems (P 〈 0·05), whereas handedness in the developmental groups was within the expected normal distribution. Aspects of hand function such as power of hand grip did not distinguish the dysgraphic children. However, children with a spelling or motor dysgraphia had speeds of motor performance on successive finger movements and rapid hand pats outwith the normal range. These simple tests are a useful way of examining pertinent handskill difficulties in dysgraphic children.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2214.1989.tb00612.x
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  • 4
    Electronic Resource
    Electronic Resource
    A study of normal baby movements (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Child 13 (1987), S. 0 
    Details
    ISSN: 1365-2214
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Summary Summary Twenty-five normal newborns aged between 3 and 6 days had their movements recorded by (a) clinical observation in a controlled environment, (b) chart recording from an automatic movement mattress over 4 hours, and (c) cine photography triggered by the movement mattress. Over 80 different individual types of movement were grouped into six categories: (a) progression movements (obligatory reciprocal movements), (b) symmetrical movements (slower flexion or extension movements), (c) startle movements, (d) asymmetrical tonic neck reflex and ‘Moro’, (e) facial movements and (f) athetoid movements. The normal newborn's motor activity is significantly related to the level of arousal, gestational age, and environmental variables sueh as position, temperature, light and noise.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2214.1987.tb00522.x
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of GaAs grown by metalorganic chemical vapor deposition on Si-on-insulator (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1188-1190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaAs layers were grown by metalorganic chemical vapor deposition on Si-on-insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01–4 μm). The surface morphology, ion backscattering yield, x-ray diffraction peak width, and Si implant activation efficiency all improve substantially with GaAs thickness. At a film thickness of 4 μm many of these properties are comparable to bulk GaAs, but some cracking of the epitaxial film is evident. Cross-sectional transmission electron microscopy reveals an average defect density of ∼108 cm−2 in the GaAs layer, which is similar to the density in GaAs films grown directly on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98728
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  • 6
    Electronic Resource
    Electronic Resource
    Disordering of InGaAs-InP quantum wells by Si implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1428-1430 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective disordering of In0.53Ga0.47As-InP multiple quantum well structures by ion implantation is demonstrated for the first time. As grown, annealed, and Si implanted and annealed samples were studied by transmission electron microscopy, optical absorption, and photoluminescence. A shift of the photoluminescence and absorption edge to higher energy was observed in implanted and annealed samples with respect to annealed only samples. This shift is attributed to a combination of disordering and Burstein–Moss effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99136
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  • 7
    Electronic Resource
    Electronic Resource
    Thickness dependence of material quality in GaAs-on-Si grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 775-783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution with increasing layer thickness of the structural and electrical properties of GaAs grown directly on Si or Si-on-insulator (SOI) by metalorganic chemical vapor deposition is reported. There is a substantial improvement in the surface morphology and near-surface crystallinity of the GaAs in thicker films (≥1.5 μm). The implant activation efficiency of 60-keV 29Si ions at a thickness of 4 μm is comparable to that seen in bulk GaAs. The deep level concentration is also observed to decrease with increasing layer thickness. Transmission electron microscopy reveals average defect densities near 108 cm−2 in films deposited either on misoriented or exact (100) Si, and in those grown on SOI.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341141
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  • 8
    Electronic Resource
    Electronic Resource
    High-speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2609-2612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trichloride vapor-phase epitaxy has been employed in a single chamber reactor to achieve the continuous (noninterrupted) growth of n−InP/n−In0.53Ga0.47As/InP superlattice structures for avalanche photodetector applications. Very low background doping has been achieved in both the InP (n≈1×1014 cm−3) and the superlattice layers (n=1×1015 cm−3). We report the details of the epitaxial crystal growth as well as analysis of the structures by secondary ion mass spectrometry and transmission electron microscopy. Avalanche photodiodes have been fabricated by Zn diffusion in the InP layer and mesa etching. The devices exhibit an intrinsic response time (full width at half maximum) of 66 ps at λ=1.5 μm which is the shortest so far achieved in superlattice photodetectors. Dark currents of 50 nA at unity gain, multiplication factors of 6, and breakdown voltages exceeding −120 V have been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337129
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  • 9
    Electronic Resource
    Electronic Resource
    Ion implantation damage and annealing in InAs, GaSb, and GaP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 629-636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of ion implantation induced damage in InAs, GaSb, and GaP, and its removal by rapid thermal annealing have been investigated by Rutherford backscattering and transmission electron microscopy. There is relatively poor regrowth of these materials if they were amorphized during the implantation, leaving significant densities of dislocation loops, microtwins, and in the case of GaSb, polycrystalline material. For implant doses below the amorphization threshold, rapid annealing produces good recovery of the lattice disorder, with backscattering yields similar to unimplanted material. The redistribution of the implanted acceptor Mg is quite marked in all three semiconductors, whereas the donor Si shows no measurable motion after annealing of InAs or GaP. In GaSb, however, where it appears to predominantly occupy the group III site, it shows redistribution similar to that of Mg.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341952
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  • 10
    Electronic Resource
    Electronic Resource
    Psychosexual trauma of an abnormal cervical smear (1988)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 95 (1988), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. The psychosexual sequelae of diagnosis and treatment of pre-invasive cervical atypia were assessed in three groups of women. The first group included 30 women referred to a colposcopy clinic with an abnormal cervical smear indicating cervical intraepithelial neoplasia (CIN), the second comprised 50 women who were traced as sexual partners of men with penile human papillomavirus (HPV) infection; 26 of them had histologically proven cervical atypia and 24 had no such evidence. The third group included 25 women traced as partners of men with non-specific urethritis and who did not have cervical disease. Before and after questionnaires assessed six aspects of sexual behaviour and responses before diagnosis and 6 months after treatment in women with cervical atypia. These were compared with answers given by women investigated and treated, if necessary, as partners of men with sexually transmitted disease (control group). There were statistically significant adverse psychosexual sequelae associated with diagnosis and treatment of pre-invasive cervical epithelial disease.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1988.tb06848.x
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