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  • 1
    Electronic Resource
    Electronic Resource
    Damage induced by laser irradiation of NiSi2/Si 〈111〉 structures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2522-2526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally grown NiSi2 layers on 〈111〉 Si substrates were irradiated with single pulses of a Q-switched Nd laser. Melting and solidification dynamics, orientation and structure of the irradiated layers were investigated by in situ time-resolved reflectivity, Rutherford backscattering in combination with channeling and scanning electron microscopy. Melt starts from the surface at 0.35 J/cm2. When the energy density is enough to melt the entire layer, the epitaxially solidified NiSi2 is mainly of B-type orientation. The thermally grown or partially melted layers are a mixture of A- and B-type crystals. A substantial decrease in the reflectivity signal has been found in the case of a partial melting of the thermally grown NiSi2 layers several microseconds after the laser pulse. This decrease has been correlated with the exfoliation of surface materials as found by the scanning electron microscopy of the irradiated samples. Slip planes were also observed after solidification either of a partially melted mixture of A and B type or of a B-type NiSi2 silicide. No exfoliation and a much lower density of slip planes were observed after solidification of a completely melted silicide layer. The dynamics of melting and the damage of the irradiated layers are explained in terms of heat-flow calculation and thermomechanical and mismatch stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337927
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial NiSi layers on 〈111〉-oriented Si obtained by pulsed laser irradiation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 861-866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally grown NiSi layers on (111) Si substrates have been irradiated by 35-ns Nd laser pulses in the energy density range of 0.3–2.0 J/cm2. The duration of the laser-induced melt was monitored in situ by transient reflectivity measurements. Samples have been subsequently analyzed by Rutherford backscattering in combination with channeling and by transmission electron microscopy. It is shown that laser irradiation in a narrow energy density range results in the formation of a novel epitaxial NiSi phase on (111) Si. Electron microscopy studies show that this silicide phase could have a cubic symmetry with a lattice constant very similar to that of Si. This phase is, however, metastable and it transforms into the orthorhombic one upon thermal annealing at about 300 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343510
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence of interfacial melting during pulsed laser irradiation of Ni2Si on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 649-651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial melting of thin (∼65 nm) Ni2Si films thermally grown on 〈111〉 Si has been observed after pulsed laser irradiation. Low-energy implanted Bi was used as a marker to detect surface melting. Rutherford backscattering spectrometry has shown that the energy density threshold for interfacial mixing was lower than the one at which changes in the Bi profile occurred. Cross-section transmission electron microscopy performed on those samples has shown the existence of a reacted layer, ∼20 nm, at the silicide/silicon interface while no change in the structure of the outermost 50 nm was observed. The reacted layer formed sharp interfaces with both the underlying silicon and the silicide. Interfacial melting has been related to the presence in the phase diagram of an eutectic between the compound and the pure silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98344
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  • 4
    Electronic Resource
    Electronic Resource
    Long-term low dose ticlopidine treatment in rheumatoid arthritis: Effects on serum sulphydryl levels, technetium index, erythrocyte sedimentation rate, and clinical disease activity (1985)
    Springer
    European journal of clinical pharmacology 29 (1985), S. 165-168 
    Details
    ISSN: 1432-1041
    Keywords: ticlopidine ; rheumatoid arthritis ; sulphydryl levels ; technetium index ; erythrocyte sedimentation rates
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary In 22 patients with rheumatoid arthritis oral ticlopidine 250 mg/day for 18 months induced clinical improvement, confirmed by a significant decrease in the counts of involved joint. A significant decrease was observed in the technetium index (Tc-index) and the erythrocyte sedimentation rate (ESR), and a significant increase occurred in the serum sulphydryl (SH) levels. The long-term changes in serum SH and Tc-index produced by ticlopidine may represent a specific antirheumatic activity of this platelet-inhibiting drug.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00547416
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  • 5
    Electronic Resource
    Electronic Resource
    Unchanging clinical picture of coeliac disease presentation in Campania, Italy (1989)
    Springer
    European journal of pediatrics 148 (1989), S. 610-613 
    Details
    ISSN: 1432-1076
    Keywords: Coeliac disease ; Clinical picture ; Epidemiology ; Adolescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Four hundred and sixty-three new diagnoses of coeliac disease in children were made during 1973 to 1986 in our department. The distribution of new diagnoses per year did not show any decreasing trend in the period 1973 to 1986. No changing trend in breast feeding attitudes was found in the region during the same period. Analysis of the clinical pattern showed a constant distribution of age at diagnosis, onset of first symptoms and nature of symptoms throughout the period studied. These data suggest that coeliac disease is predominantly genetically determined and its expression is modulated by individual and environmental factors. The stability of the observed prevalence of the disease is parallel to the unchanging pattern of breast feeding attitudes in the region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00441511
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    Paper (German National Licenses)
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