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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Anatomy and embryology 177 (1988), S. 485-493 
    ISSN: 1432-0568
    Keywords: Ventral tegmental nucleus of Gudden ; Dorsal tegmental nucleus of Gudden ; Quantitative morphometric study ; Synaptic organization ; Electron microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The fine structure of neuronal somata and axosomatic synapses in each subnucleus of Gudden's tegmental nuclei was studied by use of electron microscopy. The pars principalis of the ventral tegmental nucleus of Gudden (TVP) is composed of oblong or triangular, medium sized neurons (11.8x22.6 μm, 211.4 μm2) containing many mitochondria, lysosomes, Golgi apparatus, and rough endoplasmic reticulum composing Nissl bodies. The light oval nucleus with a prominent nucleolus is centrally situated, and indentations of its nuclear envelope are recognized in all neurons. The neuron in the pars ventralis of the dorsal tegmental nucleus of Gudden (TDV) is similar to that in the TVP, but its average size is significantly smaller (10.0x18.8 μm, 151.4 μm2), and its organelles are also less well developed. The pars dorsalis of the dorsal tegmental nucleus of Gudden (TDD) is composed of spindle shaped, small neurons (6.9x16.2 μm, 85.1 μm2) characterized by their irregular shaped nucleus with its invaginated envelope. These neurons have a thin rim of cytoplasm, poorly developed organelles and no Nissl bodies. The average number of axosomatic terminals in a sectional plane is 9.9 in the TVP, 9.6 in the TDV and 2.6 in the TDD, and the bouton covering ratio is 24.3% in the TVP, 26.5% in the TDV and 7.4% in the TDD. The respective percentages of round, flat and pleomorphic type axosomatic terminals were estimated, and the flat type terminals were found to be dominant in the TVP, the pleomorphic type terminals in the TDV, and the round type terminals in the TDD.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0533
    Keywords: Brain tumor ; Brain metastasis ; Walker 256 tumor ; Bromodeoxyuridine (BrdU) ; Glial fibrillary acidic protein (GFAP)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary To elucidate the environmental influence on the growth of a tumor, bromodeoxyuridine (BrdU) uptake in multiple tumor foci within the intracranial cavity was studied immunohistochemically with a monoclonal antibody. Walker 256 tumor implanted intracerebrally produced multifocal tumors presented as (1) intraparenchymal solid tumor, (2) tumor in the choroid plexus, and (3) leptomeningeal dissemination. The BrdU-labeling indices, or the S-phase fractions (% of nuclei labeled by BrdU divided by the number of tumor cell nuclei scored; LI), of those tumors were 48.4±1.1, 59.1±1.3, and 27.9±5.9, respectively (means ± SEM). These differences in LI, or the tumor growth activity, are discussed in relation to the different environmental conditions in different host structures. These host structure-related modification of tumor growth would be important in evaluating the proliferative activity of tumors growing at various intracranial structures.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Acta neuropathologica 68 (1985), S. 87-92 
    ISSN: 1432-0533
    Keywords: Pituitary neoplasm ; Anterior pituitary hormone ; Amyloid ; Electron microscopy ; Bromocriptine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The accumulation of amyloid in pituitary adenomas was examined in relation to the types of adenoma and the effect of bromocriptine treatment. Amyloid had accumulated in 34 of 48 adenomas (71%). The occurrence in prolactin-secreting adenomas and growth hormone-secreting adenomas was 79%, respectively, while that in non-functioning adenomas was 50%. Treatment with bromocriptine enhanced the occurrence and extent of the amyloid accumulation in prolactin- or growth hormone-secreting adenomas. Electron microscopy revealed the initial appearance of the amyloid fibrils in the smooth endoplasmic reticulum and a possible sequential process of their release from the cells. The presence of secretory granules in vesicles containing amyloid fibrils and their simultaneous release with amyloid fibrils suggested that degradation of secretory granules was involved in the formation of amyloid.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 0942-0940
    Keywords: Brain neoplasms ; medulloblastoma ; lymphokine-activated killer (LAK) cells ; adoptive immunotherapy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary An adoptive immunotherapy of 6 patients with medulloblastoma by lymphokine-activated killer (LAK) cells is described. They were from 2 to 9 years in age and had cerebrospinal fluid (CSF) dissemination of the tumours. All patients underwent the whole-neuraxis irradiation and chemotherapy. After the usual treatments, they were submitted to an adoptive transfer of one-haplotype identical LAK cells. The LAK cells were induced from peripheral blood lymphocytes (PBL) of their relatives with human recombinant interleukin-2 (rIL-2). 3–15×109 LAK cells were transferred intrathecally in 2–3 months. In 3 of 6 patients, neurological signs were improved and malignant cells had never been detected on CSF cytology after the adoptive immunotherapy. One among these 3 patients showed complete response in 20 months. Thus, this is an attractive approach for the treatment of medulloblastoma with CSF dissemination of the tumour which current therapeutic intervention can not cure.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 0942-0940
    Keywords: Primary intracranial malignant melanoma ; Longterm survival
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary A 57-year-old male with primary intracranial malignant melanoma who survived 9 years and 6 months is reported. He underwent surgical removal of the tumour three times during the decade 1978 to 1988, and received chemo-immuno-radiotherapy during that time. Acute tumour growth, suggesting tumour dissemination, was seen in the CT scans after the third removal of recurrent tumour, but then it disappeared after combined chemoradiotherapy with DTIC. He gradually became inactive, probably because of brain atrophy caused by high-dose radiotherapy and chemotherapy, and died of renal failure without any sign of recurrence on CT scans.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2764-2766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power (2.2 W) cw operation has been achieved in a (111)-oriented GaAs/AlGaAs graded-index separate-confinement-heterostructure single-quantum-well laser with the 100-μm wide stripe geometry. High differential quantum efficiency of 81% has been obtained up to ∼1.2 W, and high total power-conversion efficiency of 46% has been achieved at 1.5 W.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 297-302 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of polarization-dependent gain-current characteristics have been carried out on (111)- and (100)-oriented GaAs/AlGaAs single-quantum-well lasers by using Hakki and Paoli's method. Polarization-dependent gain-current characteristics have been found to strongly depend on the well width and the quantization direction. The saturation of gain with the injection current and the width of the gain spectrum depends on the well width, and they are also affected by the transition between the higher-order subbands. Experimental results of polarization-dependent spontaneous emission are also presented. The simple selection rule and the effective-mass theories do not quantitatively account for the experimental results.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 339-341 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fundamental characteristics of (111) oriented GaAs/AlGaAs graded-index separate-confinement-heterostructure single quantum well lasers have been compared with conventional (100) oriented lasers. In particular, the threshold current density Jth of (111) oriented lasers does not change with the well width Lz in the range of Lz=30–100 A(ring), which corresponds to an ideal extreme. The lowest Jth of 145 A/cm2 together with a high characteristic temperature T0 of 186 K in the threshold-temperature dependence has been achieved for an Lz of 40 A(ring) and a cavity length of 490 μm. The dependence of T0 on Lz showed that T0 is maximum at Lz∼60 A(ring) for both (111) and (100) oriented lasers.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1729-1732 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy-band structure of (AlAs) (GaAs) short-period superlattices (SLs) has been investigated by using photoluminescence and photoluminescence excitation spectroscopy. In the indirect transition region, both direct and indirect transitions are simultaneously observed and the band structure is elucidated. Indirect-direct crossover occurs in the region of 15–18 A(ring) GaAs thickness for SLs with 10-A(ring) AlAs thickness.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4452-4454 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity Al0.3Ga0.7As is grown by molecular beam epitaxy at a high substrate temperature using a superlattice buffer layer in order to trap residual impurities. The unintentionally doped layer is p type with p 〈 5×1014 cm−3. Photoluminescence spectra at 10 K showed the strong bound-exciton emission to be 3.8 meV wide and extremely weak emission due to residual C and Si. Photoluminescence spectra of successively grown single-quantum wells with different widths demonstrate that residual C and Si are mainly trapped at the interface of the first-grown well.
    Type of Medium: Electronic Resource
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