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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1252-1255 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial silicon films were grown on (100) silicon wafers at temperatures between 650 and 700 °C without the need of special cleaning procedures. Deposition rates were from 30 to 80 nm/min. The structure of films was analyzed by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectroscopy. The films were doped by ion implantation. Electrical activity, Hall mobility, and sheet resistivity of the doped layers were measured. Both structural and electrical characterization yielded results indistinguishable from good-quality bulk wafers.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 9 (1988), S. 129-133 
    ISSN: 1434-6079
    Keywords: 32.60.S ; 32.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Stark widths and shifts of sixCII, threeCIII and twoCIV spectral lines have been measured in a linear pinch discharge plasma and compared with available experimental and theoretical data. Electron density, (0.86−1.64)×1023 m−3, was determined by single wavelength laser interferometry using the visible 632.8 nm transition of He-Ne laser. The electron temperature of 38000 K was derived from the Boltzmann slope of severalCII spectral lines, and ratios of severalCII toCIII spectral lines. The stark widths (w) dependence on:(i) the upper-level ionization potential (I) of corresponding lines;(ii) net charge (z) of the emitter core seen by the optical electron undergoing transition, and(iii) electron temperature (T) was found to be of the form:w=az 2 T −1/2 I −b . However, it should be noticed that the essential role in the obtained trends belongs to the energy of the emitter core. The established overall trend is used to predict Stark widths of uninvestigated spectral lines originating from the given transition arrays.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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