Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2005-2009  (3)
  • 1985-1989  (2)
Source
Material
Years
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial (100) silicon films grown at low temperatures in an electron-beam evaporator (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1252-1255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial silicon films were grown on (100) silicon wafers at temperatures between 650 and 700 °C without the need of special cleaning procedures. Deposition rates were from 30 to 80 nm/min. The structure of films was analyzed by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectroscopy. The films were doped by ion implantation. Electrical activity, Hall mobility, and sheet resistivity of the doped layers were measured. Both structural and electrical characterization yielded results indistinguishable from good-quality bulk wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334522
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 518 (July 2006), p. 155-160 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper we present a study of the formation of TiN thin films during the IBADprocess. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incidentangle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiNlayers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneouslybombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressureof Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 -1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to athickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy wasvaried from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples wereanalyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profilesof titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectrawere analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD)for phase identification. The resistivity of samples was measured with four-point probe method. Theresults clearly show that TiN thin layer grows with (111) and (200) preferred orientation, dependingon the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolledcrystalline orientation occurs. Also, it was found that the variations in TiN film resistivitycould be mainly attributed to the ion beam induced damage during the IBAD process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.518.155.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 555 (Sept. 2007), p. 35-40 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We present a study of the micro-structural changes induced in Cr-N layers by irradiationwith argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to athickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures.The samples were subsequently irradiated with 120 keV Ar+, to 1x1015 and 1x1016 ions/cm2.Structural characterization was performed with Rutherford backscattering spectroscopy, x-raydiffraction analysis and transmission electron microscopy, and we also did electrical resistivitymeasurements on the samples. It has been found that the layers grow in the form of a polycrystallinecolumnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N orCrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induceslocal micro-structural changes, formation of nano-particles and defects, though the structures retaintheir polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivityafter ion irradiation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.35.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Properties of TiN Coatings Deposited on Nitrogen Ion Implanted Steel C1045 (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 555 (Sept. 2007), p. 59-64 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The effects of nitrogen pre-implantation of AISI C1045 steel substrates on the propertiesof deposited TiN coatings were investigated. Nitrogen ion implantations were performed at 40 keV,to the fluences from 5x1016 – 5x1017 ions/cm2. On so prepared substrates we deposited 1.3 μm thickTiN layers by reactive sputtering. Structural characterizations of the samples were performed bygrazing incidence X-ray diffraction analysis (GXRD), standard X-ray diffraction analysis (XRD),and scanning electron microscopy (SEM). Microhardness was measured by Vicker’s method. Theobtained results indicate the formation of iron-nitrides in the near surface region of the substrates,more pronounced for higher implanted fluences. The structure of the deposited TiN coatings showsa strong dependence on the pre-implantation of the substrates, which is attributed to the changedlocal structure at the surface. Ion implantation and deposition of hard TiN coatings induce anincrease of the microhardness of this low performance steel of more than eight times
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.59.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Stark broadening and shift of multiply ionized carbon spectral lines (1988)
    Springer
    The European physical journal 9 (1988), S. 129-133 
    Details
    ISSN: 1434-6079
    Keywords: 32.60.S ; 32.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Stark widths and shifts of sixCII, threeCIII and twoCIV spectral lines have been measured in a linear pinch discharge plasma and compared with available experimental and theoretical data. Electron density, (0.86−1.64)×1023 m−3, was determined by single wavelength laser interferometry using the visible 632.8 nm transition of He-Ne laser. The electron temperature of 38000 K was derived from the Boltzmann slope of severalCII spectral lines, and ratios of severalCII toCIII spectral lines. The stark widths (w) dependence on:(i) the upper-level ionization potential (I) of corresponding lines;(ii) net charge (z) of the emitter core seen by the optical electron undergoing transition, and(iii) electron temperature (T) was found to be of the form:w=az 2 T −1/2 I −b . However, it should be noticed that the essential role in the obtained trends belongs to the energy of the emitter core. The established overall trend is used to predict Stark widths of uninvestigated spectral lines originating from the given transition arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01384263
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...