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  • 1
    Electronic Resource
    Electronic Resource
    Switching phenomena in CdIn2S4 thin films (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1846-1851 
    Details
    ISSN: 0392-6737
    Keywords: Electronic properties of thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si sono studiati due tipi di fenomeni di commutazione in film sottili amorfi e policristallini di CdIn2S4 che sono stati ottenuti col metodo di evaporazione nel vuoto e col metodo di spruzzamento a c.c., rispettivamente. Uno è il cosiddetto fenomeno di commutazione della memoria che nasce dal percorso del filamento a bassa resistenza. Un altro è il caratteristico fenomeno di commutazione nel quale la resistività cambia bruscamente ogni qual volta la temperatura ambiente raggiunge un valore critico. Il tempo di commutazione è breve e intorno ai 100 ns. Questo fenomeno di commutazione è in relazione ai difetti innati nel reticolo CdIn2S4 perché questi possono essere osservati nei film policristallini cosí come nei film sottili amorfi.
    Abstract: РезУме Исследуится два типа явлений коммутации в поликристаллических и аморфных тонких пленках CdIn2S4, которые приготовлены методом вакуумного испарения и методом d.c. напыления. Одно явление представляет так называемое явление запоминающею коммутации. Другое представляет характеристическое явление коммутации, в котором удельное сопротивление резко меняется, когда температура окружающею среды достигает критическою величины. Время коммутации меньше или порядка 100 нс. Это явление коммутации связано с природными дефектами в решетке CdIn2S4, так как они могут наблюдаться в поликристаллических, а талже в аморфных тонких пленках.
    Notes: Summary Two kinds of switching phenomena in CdIn2S4 polycrystalline and amorphous thin films which were prepared by the vacuum evaporation method and the d.c. sputtering method, respectively, were studied. One is the so-called memory switching phenomenon arising from the low resistive filament path. Another is a characteristic switching phenomenon in which the resistivity abruptly changes whenever the ambient temperature reaches a critical value. The switching time is fast and about 100 ns. This switching phenomenon is related to the native defects in the CdIn2S4 lattice, because they can be observed in the polycrystalline as well as in the amorphous thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457875
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetoresistance of CdIn2S4 single crystals (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1886-1890 
    Details
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto La resistenza magnetica è stata misurata in cristalli singoli di CdIn2S4 con concentrazioni di portatori diverse che variano da 4.3·1015 cm−3 a 8.5·1018 cm−3. I risultati indicano che il minimo della banda di conduzione del CdIn2S4 è situato ak=0.
    Abstract: Резюме Измеряется магниторезистивный эффект в монокристаллах CdIn2S4, имеющих различные концентрации носителей от 4.3·1015 см−3 до 8.5·1018 см−3. Полученные результаты указывают, что минимум зоны проводимости в CdIn2S4 приk=0.
    Notes: Summary Magnetoresistance was measured on CdIn2S4 single crystals having various carrier concentrations ranging from 4.3·1015 cm−3 to 8.5·1018 cm−3. The results indicate that the minimum of the conduction band of CdIn2S4 is located atk=0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457881
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of CuIn5S8 single crystals (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1875-1879 
    Details
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Molte proprietà ottiche e di trasporto sono state studiate sui cristalli singoli di tipon di CuIn5S8. Si è determinato che il gap di energia a 0 K dalle misurazioni elettriche è 1.4 eV. Si è trovata un'anisotropia dell'effetto di magnetoresistenza e si è suggerito che i minimi della banda di conduzione siano situati in punti lungo le direzioni [100] nello spaziok. Si è trovata una banda di assorbimento ottico in una regione dell'infrarosso di (1÷1.6) μm, che è state attribuita alle transizioni delle piú basse bande di conduzione situate lungo le direzioni [100] a una piú alta banda di conduzione.
    Abstract: Резюме Исследуются некоторые транспортные и оптические свойства монокристаллов CuIn5S8 n-типа. Из электрических измерений определяется энергетическая щель при 0 К, которая составляет 1.4 эВ. Обнаружена анизотропия магниторезистивного эффекта. Предполагается, что минимумы зоны проводимости расположены в точках вдоль направления [100] вk-пространстве. Обнаружена оптическая зона поглощения в инфракрасной области (1÷1.6) мкм, которая связана с переходами из нижней зоны проводимости, расположенной вдоль направлений [100], В верхнюю зону проводимости.
    Notes: Summary Several transport and optical properties have been studied onn-type CuIn5S8 single crystals. The energy gap at 0 K was determined from the electrical measurements to be 1.4 eV. An anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions ink-space. An optical-absorption band was found in an infrared region of (1÷1.6) μm and was attributed to the transitions from the lowest conduction band situated along the [100] directions to an upper conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457879
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence of the layered compound CdInGaS4 (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 2002-2006 
    Details
    ISSN: 0392-6737
    Keywords: Photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si è misurata ed analizzata la fotoluminescenza del composto a strati CdInGaS4. Si è trovato che la larga banda di emissione a circa 1.9 eV è composta di tre bande con picchi a 2.16, 1.98 e 1.76 eV a 4.8 K. Queste bande sono dovute a transizioni da libero a legato o da donatore ad accettore. Si è trovata una nuova banda di emissione con picco a 2.38 eV. Questa banda mostra che l'intensità di picco dipende marcatamente dalla posizione nel cristallo ed è correlata a centri localizzati. Si discute l'origine dei centri.
    Abstract: Резюме Измеряется и анализируется фотолюминесценция слоистых соединений CdInGaS4. Обнаружено, что широкая полоса излучения около 1.95 эВ состоит из трех зон 2.16, 1.98 и 1.76 эВ при 4.8 К. Эти зоны связаны с переходами из свободного состояния в связанное или от донора к акцептору. Мы обнаружили новую полосу излучения вблизи 2.38 эВ. Эта полоса имеет интенсивность, которая зависит от положения в кристалле и связана с локализованными центрами. Обсуждается природа этих центров.
    Notes: Summary The photoluminescence of the layered compound CdInGaS4 was measured and analysed. The broad emission band at about 1.95 eV was found to be composed of three bands peaking at 2.16, 1.98 and 1.76 eV at 4.8K. These bands are due to free-to-bound or donor-to-acceptor transitions. We have found a new emission band peaking at 2.38 eV. This band shows that peak intensity markedly depends on the position in the crystal and is related to localized centres. The origin of the centres is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457901
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  • 5
    Electronic Resource
    Electronic Resource
    Expanding Roles of Computers and Robotics in Biological Macromolecular Research (1989)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biophysics and Biomolecular Structure 18 (1989), S. 1-24 
    Details
    ISSN: 0084-6589
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.bb.18.060189.000245
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray diffraction under ultrahigh pressure generated with sintered diamond anvils (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2201-2204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High pressures generated with sintered diamond as the second stage anvils in the "6-2 type'' double-stage apparatus have been calibrated by x-ray diffraction with synchrotron radiation. Sintered diamond has permitted a fair amount of x-ray transparency although the chemical analysis shows the existence of 14-wt. % Co binder. Anvils with a top face of 0.7 mm diam performed the generation of 60 GPa, which was confirmed on the lattice parameters of B1 and B2 phases of NaCl. No appreciable plastic deformation of the used anvils has certified the higher pressure generation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337178
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the exponential optical absorption in Bi12SiO20 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2012-2015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption spectra in Bi12SiO20 have been measured precisely at various hydrostatic pressure up to 40 kbar, and analyzed in the region below the fundamental absorption edges. It can be seen that the optical-absorption coefficients plotted semilogarithmically vary linearly with photon energy below the fundamental absorption edges at each hydrostatic pressure. The steepness of the absorption edge decreases with increasing pressure up to 10 kbar and then it shows constant value. The broad shoulders below 3.1-eV photon energy are shown, and the optical-absorption coefficients in those regions increase with increasing pressure up to 10 kbar.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339543
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the exponential optical absorption in CdInGaS4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 434-436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption spectra in the semiconductor CdInGaS4 have been measured precisely at various hydrostatic pressures up to 20 kbar, and analyzed in the region below the fundamental absorption edges. It can be seen that the absorption coefficients plotted semilogarithmically vary linearly with photon energy below the fundamental absorption edges at each hydrostatic pressure. The steepness of the absorption edge is proportional to the inverse of hydrostatic pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338844
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of the thermal expansion of semiconductors CdIn2S4 and CdInGaS4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 732-734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal expansion of the compound semiconductors CdIn2S4 and CdInGaS4 has been investigated on single crystals between 120 and 570 K. At high temperatures the anharmonic effects in lattice vibrations of the (parallel)c-axis direction in CdInGaS4 is similar to that in the ⊥c-axis direction, and that in CdIn2S4 is similar to that in CdInGaS4 in spite of the diverse crystal structures. The characteristic temperature (corresponding to Debye temperatures) for CdIn2S4 is 175±10 K, and for CdInGaS4 it is 200±10 K ((parallel)c axis) and 161±10 K (⊥c axis), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339755
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the optical absorption edge in Bi12SiO20 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2065-2066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption coefficients in Bi12SiO20 have been measured precisely at various hydrostatic pressures up to 40 kbar at room temperature. The interband gap for the indirect allowed transition was found to have a pressure coefficient (∂Eg/∂P)T of −1.20×10−6 eV/bar. Using the result of the pressure coefficient, it was indicated that the electron-phonon interaction was dominant in the temperature dependence of the indirect energy gap in Bi12SiO20.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338006
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