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Notes: Abstract Epitaxial-diffused 6H-SiC diodes incorporating a high-resistivity interlayer in the base were studied; the resistance of this interlayer varied when the forward-bias voltage was applied. It is shown that, in spite of the absence of direct indications of the effects of the series resistance (the capacitance is independent of frequency and the value of capacitive cutoff voltage is small), the capacitance measurements for such structures may be incorrect.

Notes: Two electron cyclotron resonance (ECR) sources, DECRIS-14-2 and ECR4M, are presently in permanent operation at the Flerov Laboratory of Nuclear Reactions cyclotrons, U400M and U400, respectively. A wide range of ions of gases from He up to Xe was delivered by the sources and accelerated in the cyclotrons. Major efforts were made in the production of high current stable ion beams of solids with relatively low melting points in mass ranges from Li up to Bi. Both the evaporator and the MIVOC technique were used. Among the solids a beam as exotic as 48Ca was produced at the U400 cyclotron with high efficiency. The main results on production of ion beams of gases and solids are reported. For further development of ECR ion sources a test bench was designed and built. The test bench is equipped with the new DECRIS-3 ion source. The parameters of the test bench and ECR source are described. © 2000 American Institute of Physics.

Notes: Production of the intense accelerated 48Ca ion beam is the key problem in the experiments on synthesizing of new heavy nuclei. For this purpose an axial injection system with the electron cyclotron resonance (ECR)-4M ion source was created for the U400 cyclotron. The task was to achieve an accelerated beam with an intensity of 0.5 pμA of 48Ca5+ at the 48Ca consumption of ∼0.5 mg/h. To solve this problem, a new method for the solid material feed into the ECR source was developed. The combination of a micro oven with a hot tantalum sheet inside the discharge chamber allowed the production of intense beams of ions of metals with relatively low melting point. The present article describes the method, technique, and experimental results on the production of 48Ca ion beam at the U-400 cyclotron from the ECR-4M ion source. The analysis of the working substance balance in the ion source including the ion beam extraction and material regeneration is performed. The analysis based on the experimental data has shown that the efficiency of Ca atom transformation into ion beam is close to that obtained for the gases such as Ar, and the intensity of 48Ca5+ constitutes about 20% of the extracted ion beam. © 2000 American Institute of Physics.

Notes: Deep centers in n-type 4H–SiC and 6H–SiC irradiated with 8 MeV protons have been investigated by capacitance spectroscopy and electron paramagnetic resonance (EPR). Samples were fabricated by sublimation epitaxy or commercially produced by CREE Inc. Research Triangle Park, NC. It is showed that irradiation of wide-band gap semiconductors may lead to an increase in the concentration of uncompensated donors in an n-type material. The spectrum of deep centers in both SiC polytypes is independent of the technology of material growth or type of charged particles. However, the parameters and behavior of the radiation defects in 6H– and 4H–SiC are different. A conclusion about the possible nature of the irradiation induced centers is made on the basis of annealing behavior and EPR data. The obtained results show that proton irradiation can be used in SiC device fabrication technology for producing local high-resistance regions in the semiconductor. © 2000 American Institute of Physics.

Notes: The weak-field dielectric dispersion (100 Hz–1.8 GHz) studies both of pure and Fe2+/Fe3 modified Cd2Nb2O7 ceramics over the temperature range of 90–380 K are presented and discussed from the viewpoint of relaxor and glassy properties of the system. It is revealed that Cd2Nb2O7 pyrochlore is intolerant of the addition of 25 mol % Fe2+ or Fe3+ for Cd2+. From the x-ray diffraction analysis, pure Cd2Nb2O7 forms a single-phase pyrochlore, while the compositions Cd1.5Fe0.52+Nb2O7 and Cd1.5Fe0.53+Nb2O7 give CdNb2O6 columbite doped with Fe2+ or Fe3+ on the Cd sites (〈8 and 〈2 mol %, respectively), except for minor amount of parasitic hematite. The novel CdNb2O6 type compounds are not ferroelectrics, unlike Cd2Nb2O7. In the latter, at TC=196 K the dielectric relaxation due to the motion of ferroelectric domain walls driven by an external ac electric field is observed. A polydispersive dielectric response of Cd2Nb2O7 around 188 K has characteristics of the relaxor ferroelectrics with glassy behavior (like PMN). Near the characteristic freezing temperature of the zero-field-cooled state (Tf=183 K) the dielectric absorption spectra and the relaxation-time distribution strongly broaden and tend to flatten out, while below Tf the imaginary part of the dielectric permittivity becomes nearly frequency independent. The dielectric response of Cd2Nb2O7 dominating far below TC (around 150 K) and that of Fe2+/Fe3+ doped CdNb2O6 between 90 and 380 K are typical of glass-forming systems at temperature far above Tglass. The relaxational process is characterized by (i) a significant frequency dependence of the peak permittivity position, (ii) non-Arrhenius behavior, and (iii) increasing asymmetry of the dielectric absorption spectrum at the low-frequency side with decreasing temperature, without broadening the relaxation-time distribution and freezing the peak-absorption frequency. It is proposed that although the nature of structural disorder in Cd2Nb2O7 pyrochlore and Fe2+/Fe3+ doped CdNb2O6 columbite is different, in both systems the off-center displacements of the A-site ions act as a random field and are responsible for the relaxor and dipolar glass-like behavior upon cooling. The Debye-like HF dielectric relaxation (1 MHz–1.8 GHz) observed both in Cd2Nb2O7 and its isostructural analog Cd2Ta2O7 at RT and higher (a centrosymmetric phase) is attributed to fluctuations in polarization of the dynamically reoriented O(7th)–Cd–O(7th) dipoles due to dynamical off-center location of Cd ions. © 2001 American Institute of Physics.

Notes: The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n–p–n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a "floating base" regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.

Notes: Abstract An analysis is made of the behavior of a magnetic droplet suspended in a liquid in a high-frequency uniform, rotating magnetic field. In weak fields the droplet is spheroidal while in strong fields it is disk-shaped. The observed change in the shape of the droplet as the amplitude of the field increases depends on the magnetic permeability μ of the liquid and takes place according to three scenarios: (a) for small μ the spheroidal droplet is continuously converted into a disk; (b) for intermediate μ there is a range of fields in which the droplet becomes a triaxial ellipsoid with its major axis lying in the plane of the field, and spheroid-triaxial ellipsoid-disk transitions take place as a result of a soft bifurcation; (c) at high μ both transitions are hard. Theoretical calculations are made of the stability curve for the various droplet shapes. It is predicted that a change in the types of droplet shape bifurcations will occur in strong fields. A comparison is made with the experimental data.

Notes: Abstract Possible types of orientational relationships for hexagonal and cubic gallium nitride layers on aluminum-magnesium spinel substrates with various crystallographic orientations have been determined as a result of the theoretical and the experimental studies of this system. Most of the experimental data and the data obtained in the present study are consistent with the theoretical considerations. The causes of some apparent inconsistencies are discussed.

Notes: Abstract The local environment of Ga, Tl, and Se atoms in InTe-based solid solutions have been studied by the method of EXAFS spectroscopy. It is shown that these atoms can be regarded as substitutional impurities occupying the In(1), In (2), and Te positions in the InTe structure. Electric measurements showed that the In1-x GaxTe and InTe1-x Sex solid solutions are semiconductors at x 〉 0.24 and x 〉 0.15, respectively.

Notes: Abstract The effect of uniaxial pressure on the electroluminescence (EL) spectrum and current-voltage (I–V) characteristics of a 6H-SiC p-n structure was studied. Under the effect of pressure, a fast quenching of the excitonic EL is observed and a slower quenching of the impurity EL bands. Uniaxial pressure also distorts the shape of the forward I–V characteristic and shifts it to lower voltages. A conclusion is made that the application of pressure leads to the transformation of thermal injection currents into tunneling currents.