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  • 1
    Digitale Medien
    Digitale Medien
    Modeling of bombardment induced oxidation of silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3001-3011 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Secondary ion mass spectrometry has become the preferred tool for impurity profiling primarily due to its excellent depth resolution and high detection sensitivity. Prerequisite in obtaining high detection sensitivity for positive secondary ions is the use of oxygen as primary ions. This leads to a high degree of oxidation of the sample surface, which is essential for a high secondary ion ionization efficiency. Unfortunately, this oxygen bombardment not only leads to the transformation of the original target surface into an oxidized layer but, as the latter requires a certain fluence before stationary state is reached, inherently causes some nonlinearities and transients in the secondary ion signal and the fluence-eroded depth relation. In this work a computer code implantation, sputtering, replacement/relocation, and diffusion (ISRD) has been optimized to predict the compositional changes of the sample surface (or altered layer formation), the sputter yields and the surface regression as a result of the interaction of oxygen beams with Si-targets. This article describes a careful reevaluation of the previously used version of ISRD (and the parameters contained in the program) in order to obtain a systematic agreement with experimental data on sputter yields, altered layer formation, and surface recession, and with other theoretical predictions. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1344581
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  • 2
    Digitale Medien
    Digitale Medien
    Electrical characterization of magnesium implanted gallium nitride (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 178-182 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Gallium nitride layers grown by molecular beam epitaxy on c axis oriented sapphire substrates were implanted with 180 keV magnesium ions with ion doses between 1×1014 and 1×1016 cm−2. The implantation induced defect states were investigated by temperature dependent conductivity (TDC) as well as by thermal and optical admittance spectroscopy (TAS, OAS) measurements. Dominant carrier emissions having thermal activation energies between 360 and 800 meV were found in TAS and TDC. These states are assigned to implantation induced electron traps since they do not appear in the nonimplanted reference sample. Defect states with similar transition energies were also observed in OAS resulting in an enhancement of defect-to-band transitions in the near band-gap region around 3.45 eV, in the blue band around 3.0 eV, as well as in the midgap range for photon energies between 2.5 and 1.80 eV, respectively. In addition, new transitions were found at 2.1 and 1.95 eV. Furthermore, transitions from implantation induced shallow states were observed, i.e., the magnesium acceptor as well as a new donor level at about 70 meV, tentatively discussed as nitrogen vacancy. The critical ion dose for amorphization was determined to be between 5×1015 and 1×1016 Mg+ cm−2 using x-ray diffraction. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1421218
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  • 3
    Digitale Medien
    Digitale Medien
    Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 546-548 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In GaN layers grown by molecular beam epitaxy and metalorganic vapor phase epitaxy on c-axis oriented sapphire, a defect-to-band transition at a photon energy of 0.44 eV was found by optical admittance spectroscopy. This transition was investigated as a function of temperature and modulation frequency. The height of the corresponding optical admittance peak shows a thermally activated quenching with an activation energy of 0.4±0.1 eV caused by a thermal carrier emission from the same defect state to the conduction band at higher temperatures. Based on this thermal quenching, the 0.44 eV level is assigned to an electron trap located in the upper half of the gap. The spectral photoionization cross section was determined, resulting in a photoionization energy at 80 K estimated to be below 0.425 eV. The omnipresence of the 0.44 eV electron trap in GaN layers grown by various epitaxial techniques and in different reactors implicates its intrinsic nature. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.127039
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  • 4
    Digitale Medien
    Digitale Medien
    Retropatellar contact characteristics in total knee arthroplasty with and without patellar resurfacing (2000)
    Springer
    International orthopaedics 24 (2000), S. 191-193 
    Details
    ISSN: 1432-5195
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Beschreibung / Inhaltsverzeichnis: Résumé  6 cadavres ont été examinés après implantation d’une prothèse totale du genou avec et sans implants de restructuration de la surface rotulienne. Les mesures de la pression et de la surface de contact ont été réalisées avec une flexion du genou à un angle de 60°. En comparant les résultats de genoux sans implants et genoux avec implants de la rotule de taille ”petite”, on remarque que ces derniers ont causé une diminution significative de la surface de contact rétro-rotulienne. Les pressions moyenne et maximum n’ont pas changé de manière déterminante. Les implants de taille ”moyenne” ont conduit à une augmentation considérable de la pression maximum et à une diminution significative de la force alors que la surface de contact et la pression moyenne ont elles, légèrement augmenté. Après la pose des deux types d’implants de la rotule on a constatée une réduction significative de la surface de contact, mais ne pas de la pression rétro-rotulienne.
    Notizen: Abstract  Total knee replacement with and without patellar resurfacing was performed in 6 cadaver specimens. The contact pressure and contact area between femur and patella was measured at 60° of flexion. In comparison to specimens without resurfacing the specimens with small size resurfacing showed a significant decrease in contact area, whereas average and maximum pressure were unchanged. In specimens with medium size resurfacing, contact area and average pressure increased slightly, whereas maximum pressure increased significantly. Patellar resurfacing did not change the retropatellar pressure, but was associated with reduced contact area.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s002640000140
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  • 5
    Digitale Medien
    Digitale Medien
    Improved Phosphoric Acid Mixtures for Nitride Strip (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 76-77 (Jan. 2001), p. 43-46 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.76-77.43.pdf
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  • 6
    Digitale Medien
    Digitale Medien
    The Origins of Fluorine in Dry Ultrathin Silicon Oxides (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 76-77 (Jan. 2001), p. 153-156 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.76-77.153.pdf
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  • 7
    Digitale Medien
    Digitale Medien
    Continuous spectral measurements of the optical absorption of glasses over the visible and near-infrared wavelength ranges (1974)
    Springer
    Applied physics 4 (1974), S. 109-113 
    Details
    ISSN: 1432-0630
    Schlagwort(e): Continuous light absorption ; Bulk glass
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A calorimetric method for continuous measurements of the optical absorption of bulk glasses over the spectrum extending from the visible to the near-infrared wavelength ranges is presented. A relation between the absorption and the induced temperature rise of the sample, at thermal equilibrium, is derived. Details for the most convenient arrangement of source, lens and monochromator are given. As an example, experimental results are plotted for a F2 glass.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00884265
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  • 8
    Digitale Medien
    Digitale Medien
    Isomeric and ground-state decay of 215 Bi (2003)
    Springer
    The European physical journal 18 (2003), S. 31-37 
    Details
    ISSN: 1434-601X
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract. A new high-spin isomer in 215Bi, with a half-life of 36.9(6) s, has been identified at the PSB-ISOLDE on-line mass separator using the pulsed-release technique combined with the element selective RILIS source. A decay scheme of $^{215{\rm m}}$ Bi was constructed and complemented with the low-spinstructure observed in $^{215{\rm g}}$ Bi decay. The population of a cascade on top of the $\left( \nu g_{9/2} \right)^5_{9/2+}$ level in 215Poprovides evidence for Gamow-Teller $\beta$ -decay of the high-spin 215Bi isomer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1140/epja/i2003-10066-6
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  • 9
    Digitale Medien
    Digitale Medien
    Nuclear spins, magnetic moments and α-decay spectroscopy of long-lived isomeric states in 185Pb (2002)
    Springer
    The European physical journal 14 (2002), S. 63-75 
    Details
    ISSN: 1434-601X
    Schlagwort(e): PACS. 27.70.+q 150 ?A? 189 – 23.60.+e Alpha decay – 32.10.Dk Electric and magnetic moments, polarizability – 32.10.Fn Fine and hyperfine structure
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract: Alpha-decay properties of the neutron-deficient isotope 185Pb were studied at the PSB-ISOLDE (CERN) on-line mass separator using the resonance ionisation laser ion source (RILIS). The nuclei of interest were produced in a 1.4 GeV proton-induced spallation reaction of a uranium graphite target. In contrast to previous studies, two α-decaying isomeric states were identified in 185Pb. The relative production of the isomers, monitored by their α-counting rates, could be significantly changed when a narrow-bandwidth laser at the RILIS setup was used to scan through the atomic hyperfine structure. Based on the atomic hyperfine structure measurements, along with the systematics for heavier odd-mass lead isotopes, the spin and the parity of these states were interpreted as 3/2- and 13/2+ and their nuclear magnetic moments were deduced. The α-decay energy and half-life value for the I π = 13/2+ isomer are E α = 6408(5) keV, T 1/2 = 4.3(2) s, respectively; while for the I π = 3/2- isomer ( T 1/2 = 6.3(4) s) two α-decays with E α1 = 6288(5) keV, I α1 = 56(2)% and E α2 = 6486(5) keV, I α2 = 44(2)% were observed. By observing prompt α-γ coincidences new information on the low-lying states in the daughter isotope 181Hg was obtained.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1140/epja/iepja1387
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  • 10
    Digitale Medien
    Digitale Medien
    The decay of the new neutron-rich isotope 217Bi (2003)
    Springer
    The European physical journal 18 (2003), S. 5-8 
    Details
    ISSN: 1434-601X
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract. Exotic, neutron-rich proton-induced spallation products of 232Th and 238U obtained from the PS Booster ISOLDE facility have been investigated by $\gamma$ - $\gamma$ , $\alpha$ - $\gamma$ coincidence and spectrum-multiscaling measurements. A new method for the reduction of isobaric contamination enabled to study the unknown region beyond 208Pb for the decay chain A = 217. A new isotope 217Bi with a half-life of $98.5 \pm 0.8$ s was discovered and its $\beta$ -decay studied. For the first time, a half-life value of $1.53 \pm 0.03$ s for the $\alpha$ -decay of 217Po was measured.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1140/epja/i2003-10065-7
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