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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed intrinsic Josephson effects for current flow perpendicular to the CuO2 planes in HTSC thin films. Tl-Ba-Ca-Cu-O thin films were deposited on step edges in LaAlO3 substrates. Due to the special preparation process, microbridges across such steps act as stacks of intrinsic Josephson junctions with current flow perpendicular to the CuO2 planes (STEP STACK junctions). Up to 130 individual junctions could be observed exhibiting high IcRN products up to 26 mV per junction. We observed ac-Josephson effects as Shapiro steps and in microwave emission experiments. At low temperatures sharp emission peaks were detected at frequencies of 11.3 and 24.2 GHz. Broad emission peaks from the whole stack were observed at temperatures close to Tc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4973-4978 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray structure (λ〈10 A(ring)) of the DPF-78 discharge was investigated with different heavy-gas admixtures to a basic D2 filling. A possible classification of plasma features is proposed. Micropinches with an unusual high aspect ratio of about 10:1 were found. Soft x-ray spectra of single micropinches were registered on film. The use of x-ray spectroscopic methods by means of spectra simulation codes allowed us to estimate the parameters of particular types of pinches with axial size of 0.5 mm and full radial size of 0.05 mm. In the He-like ionization state we obtained ne≈3×1021 cm−3 and Te≈0.8 keV. The electron temperature determined in the H-like ionization stage was considerably higher, Te≈2 keV, indicating a strong ionizing plasma. Possible deviations from the Bennett condition are discussed in connection with the spectroscopic results. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7672-7675 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stable platinum oxide films have been prepared through magnetron sputtering and have been analyzed on the bases of energy-sensitive microanalyses, x-ray diffraction, resistivity, and optical reflectance measurements. The complex dielectric function has been determined for various oxygen contents in the film covering the wave-number regime 50 cm−1–λ−1–50 000 cm−1. The vibrational properties are dominated through a strong band, centered at 765 cm−1, associated with a asymmetric stretching mode of the Pt—O bond. The films are amorphous, with chemical composition PtOx, where 1〈x〈2.1, and are considered as a homogeneous solid solution of PtO and PtO2. The materials system displays a conductor–insulator transition at x≥2, in connection with an optical band gap Eg of ∼1.2 eV in the fully oxidized state. The conduction mechanism over the whole range of compositions is thermally activated and is determined through a large density of localized states extending into the band gap. At x〈2 the optical gap disappears, consistent with the semimetallic behavior of the materials system for this range of composition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The wiggler beamline BW2 at HASYLAB provides an intense monochromatic photon beam in the x-ray range from 2.02 to 33.5 keV for a diversity of experimental x-ray techniques such as surface diffraction, photoemission, absorption, microtomography, standing waves, etc. The beamline layout and its overall performance are described. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 816-818 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High frequency modulation of gain-coupled (GC) and index-coupled (IC) InGaAs/InGaAlAs distributed feedback (DFB) lasers is investigated. Laser dynamics of conventionally fabricated IC DFB lasers are compared with GC DFB lasers realized by the new technology of masked implantation enhanced intermixing. Band structure dependence of the modulation response at low temperature (T=2K) is analyzed by detuning the emission energy of the DFB lasers with respect to the gain maximum using different grating periods. Pulse widths decreasing from 53 ps down to 4.5 ps with increasing emission energy demonstrate the capability of both coupling types. The experimental results are in excellent agreement with a theory without any fit parameter based on laser rate equations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5458-5468 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A versatile model for ultraviolet (UV) laser ablation of polymers is presented, which is very successfully applied to the calculation of a variety of different properties of this process, including the influence of plume attenuation dynamics. The polymer is described as a system of chromophores with two possible electronic states. The model is based on the combination of photothermal decomposition and photodissociative bond breaking in the electronically excited state. Laser induced chemical modifications are incorporated via different absorption coefficients for the initial and for the modified polymer after absorption of UV light. Dynamic attenuation of the expanding ablation plume and heat conduction are taken into account. The results of the theoretical calculations are compared with the results of three different series of experiments performed with polyimide (PI) and polymethylmethacrylate at the excimer laser wavelength 248 nm and with PI also at 308 nm: (1) Measurement of the ablation rate as a function of fluence for four different pulse durations between 20 and 250 ns; (2) Measurements of the ablation rate as a function of fluence for five different laser irradiation spot radii between 10 and 150 μm, and (3) Time resolved measurement of the dynamic plume attenuation at the ablating laser wavelength as a function of fluence for four different pulse durations between 20 and 250 ns. The model leads to a prediction of etch rates, ablation thresholds, plume attenuation, and surface temperatures during the ablation process, which is in good agreement with the experimental results. The observed increase of the ablation rate with increasing pulse length and with decreasing laser spot size can be explained by the model as a consequence of laser induced modified absorption in combination with the dynamic shielding of the expanding plume. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2506-2508 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferromagnetic La0.8Sr0.2MnO3−δ films have been sputtered on SrTiO3 bicrystal substrates. Etched patterns crossing the bicrystal grain boundary are compared with identical patterns not crossing it. The films were annealed at different conditions and their magnetoresistance measured as a function of temperature T and of in plane magnetic field H strength and direction. Annealing at 900 °C was found to modify the grain boundary and to increase its magnetoresistance. For H=±80 Oe parallel to the grain boundary and T=32 K narrow magnetoresistance peaks of 60% height are measured. They are interpreted in the frame of an in plane magnetotunneling structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3455-3457 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of tunneling induced transparency in asymmetric double quantum well structures. Resonant tunneling through a thin barrier is used to coherently couple the two upper states in a three level system of electronic subbands in a GaAs/AlGaAs structure. This creates Fano-type interferences for the collective intersubband excitations in the absorption from the ground state, analogous to electromagnetically induced transparency (EIT) in atomic systems. We observe a 50% reduction in absorption between the subband resonances which can be explained by taking into account the coherent coupling of the upper states. We analyze the bias dependent absorption spectra and determine the relevant lifetime broadening and dephasing rates for the transitions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2554-2556 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of intersubband absorption in single semiconductor quantum wells of different well widths and alloy compositions. The well width dependence of the intersubband absorption linewidth is consistent with broadening dominated by interface roughness. The linewidth, however, is found to be relatively unaffected by alloy composition in the quantum well, making alloying an effective tool in the design of quantum well optical devices relying on intersubband transitions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3611-3613 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements of second-harmonic generation in interband transitions of InxGa1−xN/GaN multiple quantum well samples. The second-order susceptibility χ(2) is studied as a function of pump wavelength and quantum well width. For the narrowest wells, we obtain χ(2)=1.3±0.4×10−10 m/V, which is an order of magnitude larger than the intrinsic value for bulk GaN. The corresponding power conversion efficiency was 6.3×10−7. An enhancement of the nonlinearity due to strong internal piezoelectric fields could not be observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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