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  • 1
    Electronic Resource
    Electronic Resource
    Photothermal deflection spectroscopy study of defects in semi-insulating GaAs (1991)
    Springer
    Applied physics 52 (1991), S. 112-114 
    Details
    ISSN: 1432-0630
    Keywords: 78.20.Dj ; 78.20.Nv ; 71.55.Jv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323725
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Sub-gap absorption study of defects in ion-implanted and annealed Si layers (1990)
    Springer
    Applied physics 50 (1990), S. 495-498 
    Details
    ISSN: 1432-0630
    Keywords: 78.20.Dj ; 78.20.Nv ; 71.55.Jv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sub-gap absorption measurements are presented as a tool to characterize the amorphization and recrystallization processes in ion-implanted and annealed Si layers. The gap state density associated with the disorder introduced in the target crystalline lattice has been shown to saturate once the amorphization dose is exceeded. The doping effect due to implantation of impurity species is also reported. The absorption spectra have also been shown to be very sensitive to defects associated with precipitation of the implanted atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324573
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoacoustic monitoring of damage in ion implanted and annealed si layers (1989)
    Springer
    Applied physics 49 (1989), S. 205-209 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 61.80 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of the implantation conditions of ion dose and energy and of thermal annealing conditions, through the determination of the material thermal conductivity and optical absorption coefficient. It was found that the technique can discriminate between amorphous material obtained under different implantation conditions. Regarding the annealed samples, different results have been obtained for amorphous as-implanted, fine grain polycrystalline, highly defective single crystalline and defect-free single crystalline materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616300
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    Paper (German National Licenses)
    Fulltext
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