ISSN:
1432-0630
Keywords:
68.35
;
68.55
;
78.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Interfaces of bonded hydrophilic and hydrophobic wafer pairs are studied by multiple internal reflection spectroscopy after annealing at 1100°C. Si−Hx and SiO−H stretching modes are still present in bonded hydrophilic wafers. Interfaces of bonded hydrophobic wafers, prepared by joining HF-etched surfaces without defonized water rinsing, are characterized by the dominance of hydrides (SiH, SiH2, SiH3). Their concentration is about 100 times higher than for bonded hydrophilic wafers. Comparison with the ATR-spectra of HF-treated surfaces showed appreciable shifts in the peak positions indicating that Si−H bonds might be involved in the bonding process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01538372
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