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  • 72.40  (1)
  • Alien translocation  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Development and molecular cytogenetic analysis of wheat-Haynaldia villosa 6VS/6AL translocation lines specifying resistance to powdery mildew (1995)
    Springer
    Theoretical and applied genetics 91 (1995), S. 1125-1128 
    Details
    ISSN: 1432-2242
    Keywords: Wheat ; Haynaldia villosa ; Alien translocation ; Powdery mildew resistance ; In situ hybridization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Several Triticum aestivum L.-Haynaldia villosa disomic 6VS/6AL translocation lines with powdery mildew resistance were developed from the hybridization between common wheat cultivar Yangmai 5 and alien substitution line 6V(6A). Mitotic and meiotic C-banding analysis, aneuploid analysis with double ditelosomic stocks, in situ hybridization, as well as the phenotypic assessment of powdery mildew resistance, were used to characterize these lines. The same translocated chromosome, with breakpoints near the centromere, appears to be present in all the lines, despite variation among the lines in their morphology and agronomic characteristics. The resistance gene, conferred by H. villosa and designated as Pm21, is a new and promising source of powdery mildew resistance in wheat breeding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00223930
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements (1982)
    Springer
    Applied physics 28 (1982), S. 223-227 
    Details
    ISSN: 1432-0630
    Keywords: 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deep-level transient spectroscopy and thermally stimulated capacitance measurements were used to investigate the properties of deep traps in Si-dopedn-Al x Ga1−xAl layers grown by molecular beam epitaxy. Two electron traps at electron emission activation energies of 0.44 and 0.57 eV have been detected. Both traps were studied in detail and found to be the origin of the persistent-photo-conductivity phenomenon in this material. The nature of both traps is the same as of the DX center in liquid phase epitaxial material reported by Lang et al. The electron capture cross-sections areσ n 1 =σ n 2=8.3×10−22cm2 atT=205K. Activation energies ofE σ 1= 0.33eV andE σ 2=0.37eV at temperatures higher than 125 K were determined by DLTS measurements and by direct measurements of the capture transient. In order to allow for the variation of the free-electron concentration during the capture process, a new method for the evaluation of the electron capture crosssection was developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618698
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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