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  • Chemistry  (4)
  • 21.20Re  (1)
  • 34.50.H  (1)
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  • 1
    Digitale Medien
    Digitale Medien
    Rotational band in111Sn (1995)
    Springer
    The European physical journal 351 (1995), S. 1-2 
    Details
    ISSN: 1434-601X
    Schlagwort(e): 23.20Lv ; 27.60+j ; 21.20Re
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Partial level scheme of the neutron deficient111Sn isotope is established upto an excitation energy of about 9 MeV and Iπ=43/2− from γ-rays following103Rh(12C, p3n) reaction. Clear evidence for the existence of a negative parity rotational band aboveγ=23/2−, most probably based on 3p-2h configuration, is obtained.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01292775
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  • 2
    Digitale Medien
    Digitale Medien
    Lifetime measurement of some levels belonging to 3p 4 4p configuration of Ar II (1989)
    Springer
    The European physical journal 14 (1989), S. 25-28 
    Details
    ISSN: 1434-6079
    Schlagwort(e): 32.70.F ; 34.50.H
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract High frequency deflection technique with delayed coincidence single photon counting arrangement has been used to measure the lifetimes of some excited states of argon II. The measurements have been performed under conditions where pressure-dependent effect is negligible. The instrumental response function has been obtained directly and the measured decay curves have been deconvoluted using this response function to yield the lifetimes of the levels concerned.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01401339
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  • 3
    Digitale Medien
    Digitale Medien
    Limitations of ion etching for interface analysis (1981)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 3 (1981), S. 118-125 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: The limitations of using ion sputtering for interfacial analysis are reviewed. It is concluded that many artifacts may degrade interfacial resolution - surface roughness, zone of mixing, bulk and surface diffusion, implantation, residual gas adsorption and matrix effects. Techniques to minimize these limitations are suggested. Some examples are: use of reactive ion beams, multiple ion beams, sample rotation and special mounting, varying the ion energy and incidence angle, and deconvolution. It is concluded, however, that sputtering may destroy atomic arrangement and chemical state information at the interface, and new approaches are needed to determine these interfacial parameters.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740030305
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  • 4
    Digitale Medien
    Digitale Medien
    Ion beam mixing of Pt with René N4 alloy (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 131-134 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Ion mixing was studied in Pt-René N4 alloy system. The substrate, René N4, is a nickel-base superalloy with about 66% of ordered γ′ precipitates by volume. The average precipitate size is approximately 0.42 μm. Mixing was accomplished by 1 MeV Pt+ ions at two different doses and followed by Rutherford back scattering and Auger sputter profiling. Mixing was significantly slower in this system than it was in Pt/Ni binary alloy suggesting a possible strong influence of alloy chemistry, microstructure or intermediate impurity layer on the mixing process.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740100212
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  • 5
    Digitale Medien
    Digitale Medien
    Notiz über Schellolsäure (1936)
    Weinheim : Wiley-Blackwell
    Zeitschrift für die chemische Industrie 49 (1936), S. 668-668 
    Details
    ISSN: 0044-8249
    Schlagwort(e): Chemistry ; General Chemistry
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/ange.19360493705
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  • 6
    Digitale Medien
    Digitale Medien
    Application of cross-sectional transmission electron microscopy in the characterization of ion beam processed materials surfaces (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 142-148 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Ion-beam-mixing-induced amorphization of Ni—Ti bilayered thin film and the amorphization of α-SiC through ion bombardment have been studied by employing cross-sectional transmission electron microscopy techniques. Rutherford backscattering analysis was employed to monitor the mixing of Ni—Ti bilayer as a function of dose (3 × 1015-2 × 1016 ions cm-2) of 1 MeV Au+ ions. It has been observed that amorphization starts at the interface as the mixing proceeds. Formation of a buried amorphous layer was obtained in α-SiC by ion bombardment with 2.5 MeV Ni+ at a dose of 1 × 1016 ions cm-2. Double energy implants (1 MeV Ni+, 1 × 1016 ions cm-2+2 MeV Ni+, 1 × 1016 ions cm-2) were employed to obtain 1.8 μm thick continuous amorphous layer on the surface of α-SiC. Also, in the present investigation, it has been shown that α-SiC pieces with amorphous surface layers joined better than those with as received crystalline surface layers.
    Zusätzliches Material: 8 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740100214
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