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  • thermal diffusivity  (3)
  • 27.60+j  (2)
  • Endogenous depression  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Band structure of118Xe (1988)
    Springer
    The European physical journal 331 (1988), S. 111-112 
    Details
    ISSN: 1434-601X
    Keywords: 21.10.Re ; 23.20.Lv ; 27.60+j
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract High spin states of118Xe have been investigated by means of γ ray spectroscopy using the92Mo(29Si,2pn) at a bombarding energy of 110 MeV. Several new side bands as well as the yrast band were established. A band crossing between the ground state and super bands was observed at ħωc = 0.39 MeV. A negative parity band with two quasi particle excitation, and a quasi γ band were also identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01289443
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  • 2
    Electronic Resource
    Electronic Resource
    High spin states in115Te (1994)
    Springer
    The European physical journal 349 (1994), S. 1-2 
    Details
    ISSN: 1434-601X
    Keywords: 23.20.Lv ; 27.60+j
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract High spin states in115Te have been studied using the89Y (29Si, p2n) reaction at a beam energy of 108 MeV.γ-γ coincidence, Eγ, Iγ and excitation functions have been measured. The level scheme has been extended to 82 MeV excitation energy relative to the 11/2 state and several new states are established. The systematical behaviour in odd- N Te isotopes is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01296323
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal conductivity of CVD diamond films (1996)
    Springer
    International journal of thermophysics 17 (1996), S. 695-703 
    Details
    ISSN: 1572-9567
    Keywords: AC calorimetry ; CVD diamond film ; Debye phonon model ; grain boundary ; thermal conductivity ; thermal diffusivity ; U-process
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Diamond films 60 and 170 µm in thickness were grown by PACVD (plasma-assisted chemical vapor deposition) under similar conditions. The thermal diffusivity of these freestanding films was measured between 100 and 300 K using AC calorimetry. Radiation heat loss from the surface was estimated by analyzing both the amplitude and the phase shift of a lock-in amplifier signal. Thermal conductivity was calculated using the specific heat data of natural diamond. At room temperature, the thermal conductivity of the 60 and 170 υm films is 9 and 16 W-cm−1. K−1 respectively, which is 40–70% that of natural diamond, The temperature dependence of thermal conductivity of the CVD diamond films is similar to that of natural diamond, Phonon scattering processes are considered using the Debye model, The microsize of the grain boundary has a significant effect on the mean free path of phonons at low temperatures. The grain in CVD diamond film is grown as a columnar structure, Thus, the thicker film has the larger mean grain size and the higher thermal conductivity. Scanning electron microscopy (SEM) and Raman spectroscopy were used to study the microstructure of the CVD diamond films. In this experiment, we evaluated the quality of CVD diamond film of the whole sample by measuring the thermal conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01441515
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal Diffusivity Measurement of Two-Layer Optical Thin-Film Systems Using Photoacoustic Effect1 (2000)
    Springer
    International journal of thermophysics 21 (2000), S. 543-552 
    Details
    ISSN: 1572-9567
    Keywords: antireflection coating ; parameter estimation ; photoacoustic effect ; thermal diffusivity ; through-plane
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In this study, we designed and developed two-layer antireflection (AR) optical coating samples on glass substrates, using different evaporation conditions of coating rates and substrate temperatures for two dielectric materials, MgF2 and ZnS, with different refractive indices. The through-plane thermal diffusivity of these systems was measured using the photoacoustic effect. The optical thicknesses of MgF2 and ZnS layers were fixed at 5λ/4 (λ=514.5 nm) and λ, respectively, and the thermal diffusivities of the samples were obtained from the measured amplitude of the photoacoustic signals by changing the chopping frequency of the Ar+ laser beam. The results demonstrated that the thermal diffusivity of the sample fabricated under the conditions of 10μÅ·s−1 and 150°C had the maximum value and that the results were directly related to the microstructure of the film system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006612403028
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement of the Thermal Conductivity of Si and GaAs Wafers Using the Photothermal Displacement Technique (1998)
    Springer
    International journal of thermophysics 19 (1998), S. 281-290 
    Details
    ISSN: 1572-9567
    Keywords: GaAs ; impurities ; phonons ; photothermal displacement technique ; semiconductors ; Si ; thermal conductivity ; thermal diffusivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Thermal conductivity and thermal diffusivity of Si and GaAs wafers were measured using the photothermal displacement technique, and the temperature dependence of these two quantities was investigated. Thermal diffusivity was obtained from the phase difference between the heating source and the signal, and thermal conductivity was determined from the maximum value of the signal amplitude in the temperature range 80 to 300 K. It was verified that an increase in doping concentration gives rise to a decrease in thermal conductivity at low temperatures. The experimental results obtained on samples with different types and doping concentrations are consistent with those expected from theoretical considerations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021467606454
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  • 6
    Electronic Resource
    Electronic Resource
    Increased serum glutamate in depressed patients (1982)
    Springer
    European archives of psychiatry and clinical neuroscience 232 (1982), S. 299-304 
    Details
    ISSN: 1433-8491
    Keywords: Serum glutamate ; Endogenous depression ; Neurotic depression ; Antidepressants ; Serum-Glutamat ; endogene Depression ; neurotische Depression ; Antidepressiva
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Der Serum-Glutamatgehalt wurde bei endogen depressiven, neurotisch depressiven, schizophrenen und schizoaffektiven Patienten sowie gesunden Kontrollpersonen bestimmt. Hierbei zeigte sich, daß die Serumglutamatspiegel bei endogen und neurotisch Depressiven signifikant höher waren als bei den anderen Gruppen. Zwischen schizophrenen und schizoaffektiven Patienten sowie Kontrollen zeigten sich dagegen keine signifikanten Unterschiede. Die weitere Analyse der Daten erbrachte die Hypothese, daß die erhöhten Serum-Glutamat-Konzentrationen bei endogen und neurotisch Depressiven eine Folge der antidepressiven Medikation sind. Diese Ergebnisse werden im Hinblick auf die Wirkung der Antidepressiva auf das Serum-Glutamat bei affektiven Störungen diskutiert.
    Notes: Summary Glutamate concentration was determined in serum from endogenous and neurotic depressive patients, in persons with schizophrenia or schizoaffective disorder, and in normal subjects. The mean serum glutamate level in the endogenous and neurotic depressive patients was found to be significantly higher than in any of the other groups. No other statistically significant differences were found. Statistical analysis revealed that the elevated serum glutamate concentration in the endogenous and neurotic depressive patients was probably caused by medication. These results are discussed in view of the effect of antidepressants upon the serum glutamate in the affective disorders.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00345492
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  • 7
    Electronic Resource
    Electronic Resource
    Levels of total and free tryptophan in the plasma of endogenous and neurotic depressives (1981)
    Springer
    European archives of psychiatry and clinical neuroscience 231 (1981), S. 35-39 
    Details
    ISSN: 1433-8491
    Keywords: Total tryptophan ; Free tryptophan ; Endogenous depression ; Neurotic depression ; Gesamt- und freies Tryptophan ; Endogene Depression ; Neurotische Depression
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Gesamt- und freies Tryptophan wurde im Plasma von 34 endogen Depressiven, 20 neurotisch Depressiven und 25 gesunden Kontrollpersonen bestimmt. Während beim Gesamttryptophan kein Unterschied zwischen den drei Gruppen festgestellt werden konnte, war das freie Tryptophan bei endogen Depressiven und neurotisch Depressiven signifikant erniedrigt. Zwischen endogen und neurotisch Depressiven fand sich kein Unterschied.
    Notes: Summary The levels of total and free tryptophan were determined in the plasma of 34 endogenous depressives, 20 neurotic depressives and 25 healthy volunteers. Whilst the levels of total tryptophan were not different in the three groups, the level of free tryptophan was reduced in both endogenous and neurotic depressives. No difference could be found between endogenous and neurotic depressives.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00342828
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