Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    A thin film CdS-self-electro-optic effect device with identically contrasted (0.95/1) optical and electro-optical loops at 210 K (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7357-7359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of the improved photothermal bistable features of a thin (6 μm) CdS Self-Electro-optic Effect Device prepared by spray deposition on pyrex. For the excitation, the 514.5 nm laser line was used. Optical, optoelectronic, electrical, and electrooptical bistabilities were observed at 210 K. It is shown that it is possible to reach with thin CdS films comparable contrasted ratios in the optical and optoelectronic bistabilities. The function of the device is explained by the measured transmission dependence of the temperature. A generalized model basing on Urbach's rule for calculating the temperature dependence of the absorption coefficient is presented, leading to a fairly good agreement with the measured curve. Furthermore, the switch-off time of the optical bistability is observed to be unusually small (5 ms) for the used laser focus diameter (400 μm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347595
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Observation of multiple precipitate layers in MeV Au++-implanted silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1796-1798 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103103
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Quantum-confined subband transitions of a GaAs sawtooth doping superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1133-1135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present for the first time the observation of quantum-confined transitions of a short-period sawtooth doping superlattice in photocurrent and luminescence. The luminescence was investigated with different laser intensities. Due to the nature of the band modulation of sawtooth doping superlattices, the resonant energies for optical transitions are dependent on the intensity of the laser beam. We present a model, which incorporates both the Kronig–Penney energy dispersion and the self-consistent intensity-dependent internal field to explain the observed energy shift. Furthermore, the differences between photocurrent and luminescence measurements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100739
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Spatial localization of impurities in δ-doped GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1508-1510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage profiles on δ-doped GaAs grown by molecular beam epitaxy reveal extremely narrow widths of (approximately-less-than)40 A(ring) at room temperature. Subband structure and capacitance-voltage (C-V) profiles of δ-doped GaAs are calculated self-consistently. Experimental C-V profiles agree with self-consistent results, only if we assume that Si impurities are localized on the length scale of the lattice constant in the host GaAs zinc-blende lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99114
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Photocurrent spectroscopy in a sawtooth doping superlattice (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1967-1969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of photocurrent response in a sawtooth doping superlattice which is composed of alternating n(Si) and p(Be) δ-doping layers with undoped GaAs layers (7–15 nm) between them. A selective contact method is used to measure the interesting behavior of the subband gap compared with the gap of the host semiconductor. The photocurrent is finite even when the photon energy is below the gap of GaAs and can be varied by applying a bias voltage between the n and p contacts. The observed phenomena can be explained by a generalized Franz–Keldysh model which takes into account the finite voltage drop inside the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99592
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Encapsulation of Ag films on SiO2 by Ti reactions using Ag–Ti alloy/bilayer structures and an NH3 ambient (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3251-3253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin encapsulated silver films have been prepared on oxidized silicon by nitridation of ∼200-nm-thick Ag–19 at. % Ti alloy films and Ag(120 nm)/Ti(22 nm) at 300–700 °C in an ammonia ambient. The encapsulation process has been studied in detail by Rutherford backscattering, and scanning Auger and secondary-ion-mass spectrometry, which showed that Ti-nitride and Ti-oxide-silicide formation take place at the surface and the Ag–Ti/SiO2 interface, respectively. Four-point-probe analysis of the alloy films suggests that the resistivity is controlled by the residual Ti concentration. Resistivity values of ∼4 μΩ cm were measured in encapsulated Ag alloy films with initial low Ti concentrations. The annealed bilayer structure had minimal Ti accumulations in Ag and the resistivity values were comparable to that of the as-deposited Ag (∼3 μΩ cm). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116564
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependence of reflectance and transmittance at 514.5 nm of CdS films formed by laser ablation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2985-2986 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of reflectance and transmittance of a thin (2 μm) CdS film prepared by laser ablation was investigated. The measurements were performed with the 514.5 nm line of an argon laser in the range 180–350 K. It occurred that due to locally enhanced absorption at the film/substrate interface, the transmitted light was considerably weaker than would be theoretically expected for a homogeneous layer. The reflectance, however, followed the theory based on Urbach's rule. The interfacial enhancement of the absorption was confirmed by luminescence investigations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116671
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Photovoltaic hybrid device with broad tunable spectral response achieved by organic/inorganic thin-film heteropairing (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 556-558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By means of laser deposition, spin casting and vacuum evaporation, optoelectronic hybrid devices were manufactured based upon the thin-film heteropairing of a perylene-derived molecule [di-isoquinoline perylene derivative (DQP)] and CdS. The photovoltaic characteristics of the devices are presented and discussed. We demonstrate that by exploitation of relatively high carrier mobilities in the CdS layer and the high photonic yield and deposition ease of the DQP film, efficient and technologically appealing optoelectronic devices are feasible. In addition, bias dependence of the spectral sensitivity demonstrates the versatility of the introduced device concept in light of photonic sensor applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494117
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of oriented thin-film CdS on glass formed by laser deposition was investigated employing 200 fs, 1.54 eV laser pulses at room temperature. The ultrafast excitation caused a two-photon absorption process, which results in purely green emission at the band gap. The spectra are fitted very well by the application of the van Roosbroeck–Shockley relation, density of states, and Urbach's rule demonstrating the intrinsic character of the radiative recombination. It is further shown that the energy position of the emission peak depends on the polarization of the impinging laser beam due to the dichroism of the highly oriented films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432756
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Demonstration of the independence of absorptive all-optical bistabilities in reflection and luminescence (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1590-1592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence on the source location of photothermal bistabilities of a thin CdS:Cu film is demonstrated by the investigation of bistability in luminescence in reflection geometry. Particularly, it is shown that the infrared portion in the reflected beam clearly exhibits contrasting bistable loops in contrast to the reflection itself. The unexpected effect is explained by the fact that bistability in luminescence is a bulk feature which is not affected by the surface region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113861
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...