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  • 1
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 9908-9917 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The impedance of the electrochemical system is derived in an explicit analytical form in relation to the stability of the system under various driving conditions. It is shown that the complex impedance is represented as the ratio of characteristic polynomials of the Jacobian matrices of linearized system under potentiostatic control and under galvanostatic control. Thus it is definitely shown that the zeros of the impedance are the eigenvalues of the Jacobian of the system under potentiostatic control, and that the poles are the eigenvalues of the Jacobian under galvanostatic control. The obtained impedance formulas are used to derive or prove several electrochemical characteristics. A direct analytical relationship between the hidden negative impedance and the galvanostatic Hopf bifurcation is also derived. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2841-2850 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel spectroscopy technique based on modulated photoconductivity measurements with varying illumination level has been applied to investigate the capture coefficients and the energy distribution of defect states in undoped amorphous silicon. From the experimental data, charged and neutral defect distributions are clearly resolved according to their own capture coefficients. The carrier capture process as well as the defect formation mechanism are both quantitatively discussed.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6538-6543 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new type of high-efficiency solar cell has been developed by a simple production process only with electron cyclotron resonance plasma-assisted chemical vapor deposition of highly conductive microcrystalline silicon carbide (μ c -SiC) on polycrystalline silicon (poly-Si). The device consists of a p -type μ c -SiC/ n -type poly-Si heterojunction where the window material is a specially made wide-band gap and highly conductive μ c -SiC. At the present stage, a conversion efficiency of 15.4% with V oc=556 mV, J sc=35.7 mA/cm2, and F. F.=77.4% has been achieved. Also employing this device as a bottom cell in a four-terminal amorphous silicon ( a -Si) tandem-type solar cell, 16.8% efficiency has been obtained. A series of technical data on the fabrication technology and device performance is presented and discussed.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4079-4086 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Localized deep states in undoped a-Si:H have been investigated by current transient spectroscopy (CTS). After a trap-filling light pulse, current transients associated with thermal emission of trapped carriers are measured over a wide time range under the isothermal condition. Slow saturation of the CTS signal J×t, with increased filling-pulse duration is well explained by taking account of spatially and energy dependent carrier capture and emission processes, yielding an estimate of attempt-to-escape frequency. The attempt-to-escape frequency has been found to be energy dependent and to range from 1012 to 1013 s−1. Detailed analysis of the CTS signal has revealed that deep-states distribution displays a broad peak locating near the center of the gap and a less pronounced structure at 0.5–0.6 eV below the conduction band edge.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3085-3091 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We have developed a longitudinal emittance monitor for a 7 MeV proton beam provided by the 433 MHz linac at the Institute for Chemical Research, Kyoto University. In the present system, the beam first hits a thin gold target on the beam line, and a fraction of the scattered protons comes into a small cavity. After deflected by a rf electric field in the cavity, the protons finally reach a position sensitive detector (PSD). The PSD gives the information of the energy and position of the individual scattered proton, which enables us to reconstruct the longitudinal distribution of the beam before colliding with the target. The phase and energy resolution of the system are estimated to be 13° and 23 keV full width at half-maximum, respectively. The longitudinal rms emittance measured was 0.39±0.07 π deg MeV under the nominal operating condition of the linac. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2901-2909 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The modulated photoconductivity technique, a convenient means of measuring the drift mobility of photocarriers, has been applied to investigate carrier transport in hydrogenated amorphous silicon. The frequency resolved spectra of drift mobility that can be obtained from the measurements were analyzed in accordance with a generalized transport model that included possible carrier interactions between localized states through tunneling transitions. Theory suggests that a tunneling-assisted thermalization of nonequilibrium carriers appreciably affects the transport process. The experimental results are reasonably accounted for by the introduced model, leading to quantitative assessments for transport mechanisms. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3846-3851 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3186-3193 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photocurrent multiplication has been observed in a hydrogenated amorphous silicon-based p-i/a-SiN:H/i-n structure junction under a reverse biased condition. A systematic investigation on the photocurrent characteristics in this junction system has been carried out. It has been shown from the analysis of the results that multiplication arises from the interband tunneling injection of valence band "electron'' through the a-SiN:H barrier layer. A device modeling on the basis of the experimental data permits us to design the device structure for achieving better performances. As a preliminary optimization of device structure, an external quantum efficiency exceeding 70 has been obtained under the operation voltage 30 V in the heterojunction photodiode having an a-SiN:H (thickness of 40 nm with optical energy gap 2.1 eV) at the p a-SiC:H/i a-Si:H interface. The proposed highly sensitive photomultiplier device might have a wide variety of application fields such as a solid-state imager for high-definition televisions, etc.
    Materialart: Digitale Medien
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  • 9
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A design of a microspectrophotometric system using a synchrotron radiation (SR) source is described. The system covers a wide spectral range of 50–13000 cm−1, being under construction at the UVSOR BL6B beamline in the Institute for Molecular Science. Preliminary experiments in the mid-infrared region (500–5000 cm−1) have qualitatively confirmed the theoretical calculation that the synchrotron radiation is more intense than a blackbody (T=1200 K) when a microspectrophotomeric technique is applied, which is due to natural collimation and high brilliance of SR source. The SR as an infrared source exhibits its advantage on measuring the spectra of small single crystals especially in the far-infrared region.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4974-4978 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron-spin resonance (ESR) under a modulated photoexcitation has been measured for investigating the nonequilibrium carriers trapped at band-tail states in hydrogenated amorphous silicon. The photomodulation technique is successfully applied for detecting the weak 29Si hyperfine structures involved in the light-induced ESR spectrum. Access to the recombination kinetics for band-tail carriers is obtained by the frequency-domain study of modulated ESR signal. Physical insights which led from these measurements are discussed quantitatively. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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