Digitale Medien
Chester
:
International Union of Crystallography (IUCr)
Journal of synchrotron radiation
8 (2001), S. 375-377
ISSN:
1600-5775
Quelle:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Thema:
Geologie und Paläontologie
,
Physik
Notizen:
Local structure of gallium ions implanted in silicon carbide has been investigated using extended X-ray absorption fine structure on the Ga K-edge. The crystallinity of the implantation layer is compared in the samples prepared under several different conditions of implantation temperature and post-implantation annealing. It is found that significant damage is induced by the implantation at room temperature, but the crystallinity recovers by the subsequent annealing at high temperature at 1600 °C. On the other hand, the best crystallinity is obtained by the implantation at high temperature of 500 °C, but the annealing results in degrading the crystallinity. This indicates an influence of the post-implantation annealing at high temperature on the crystallinity in atomic level, which relates to the secondary defects in lattice observed by electron microscope.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1107/S0909049500016113
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