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  • 1
    Digitale Medien
    Digitale Medien
    Simulation of tunneling current from gate edges of metal-oxide-silicon structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6679-6684 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A numerical model has been developed to calculate the electron tunneling current component from gate edges of metal-oxide-silicon capacitor/transistor structures, which had been neglected in previous studies. Tunneling probability from the gate edge is obtained by direct solution of the time-independent Schrödinger equation, using Schwarz–Christoffel transformation to map the nonplanar gate edge region to a rectangular domain, and solving the transformed Schrödinger equation by finite element methods.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348885
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  • 2
    Digitale Medien
    Digitale Medien
    Variations of the infrared transmission properties with the metal–insulator transition in thin films of the yttrium-hydride system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6135-6138 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This work investigates the variations of the infrared transmission spectra of yttrium-hydride films YHx during the hydrogen loading process for the frequency range 500–4000 cm−1. The results indicate that the transmittance slightly decreases in the dihydride phase, followed by a significant increase in the trihydride phase. In addition, the carrier concentration decreases, whereas the carrier relaxation time increases with hydrogen content. The hydrogen vibration modes at interstitial sites are completely screened in the dihydride phase. The screening effect decreases as the system goes through the metal–insulator transition. Moreover, the screening effect can be continuously tuned by simply varying the hydrogen content in the yttrium-hydride system. Analysis indicates that the absorption intensity of the vibration mode depends on the carrier concentration. This effect can be used as a diagnostic tool for estimating the carrier concentration and hydrogen content in rare-earth hydrides. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1367879
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  • 3
    Digitale Medien
    Digitale Medien
    Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 747-752 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Amorphous and polycrystalline compounds of (Ga,As) and (Al,As) grown at very low temperatures by molecular-beam epitaxy are characterized. The ultimate microstructure and the amount of excess arsenic incorporated in the (Ga,As) or (Al,As) layers are found to depend on the arsenic overpressure during the low-temperature growth. With lower arsenic overpressure, a polycrystalline structure prevails and less excess arsenic is observed inside the layer. In contrast, a high incorporation of excess arsenic achieved by high-arsenic overpressures leads to the formation of amorphous films. Upon wet oxidation, the lateral oxidation rate of (Al,As) is found to depend on the crystallinity of the (Al,As) layer and the amount of excess arsenic. During the same process, recrystallization proceeds in the (Ga,As) layer. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1326466
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  • 4
    Digitale Medien
    Digitale Medien
    Strain relaxation and defect reduction in InxGa1−xAs/GaAs by lateral oxidation of an underlying AlGaAs layer (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6922-6924 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The strain relaxation in In0.25Ga0.75As and In0.4Ga0.6As grown on GaAs substrates at low temperature has been studied before and after laterally oxidizing an underlying Al0.98Ga0.02As layer. The relaxation as a function of layer thickness has been measured by cross-sectional transmission electron microscopy and x-ray analysis. It is found that oxidation of the Al0.98Ga0.02As layer improves the relaxation of the strained InxGa1−xAs layer. Moreover, the interfacial misfit dislocations have been removed, and the threading dislocation density has decreased approximately by one order of magnitude after oxidation. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1287766
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  • 5
    Digitale Medien
    Digitale Medien
    Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4921-4923 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550 °C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10−7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357206
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  • 6
    Digitale Medien
    Digitale Medien
    Dielectric permittivity of some smectic phases in ferroelectric liquid crystals derived from (2s)-2-(6-hydroxy-2-naphthyl) propionic acid (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3681-3685 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A study of the dielectric response as a function of frequency (20–106 Hz) and temperature in smectic ferroelectric liquid crystals HmPBNP, m=6,8–12,16, has been carried out. For m=10–12, it reveals a transition sequence of five phases: crystal–SmC*γ–SmC*–SmC*α–SmA. Three Goldstone modes have been identified in different temperature intervals associated with SmC*γ, SmC*, and SmC*α phases, respectively. The ferroelectric phases almost totally disappear for m=6. An unexpected antiferroelectric (AF)-like phase accompanied by the ferroelectric phases forms for m=8. The formation of the AF-like phase might be explained by the fast increase of the relaxation frequencies of the Goldstone modes due to the reduction of the alkyl chain in H8PBNP. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361198
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  • 7
    Digitale Medien
    Digitale Medien
    Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 °C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 °C or below. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114471
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  • 8
    Digitale Medien
    Digitale Medien
    Growth and properties of submillimeter single grain Tl2Ba2Ca2Cu3O10+x superconducting thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2084-2086 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Distinct crystalline superconducting grains of Tl2Ba2Ca2Cu3O10+x(Tl−2223) with sizes up to 150 μm×150 μm×1 μm were prepared by a single target dc-sputtering process followed by proper postannealing at temperatures around 910 °C. A reactive ion etching process was developed to pattern an ∼10 μm wide bridge with four contact leads directly on a single grain to study its superconducting transport properties. The etching process was found to have only minimal effect on the superconducting transition temperature Tc, which was typically around 110 K. Grains grown on MgO(100) and LaAlO3(100) substrates, although displaying somewhat different in-plane orientations, all had critical current densities Jc, well above 106 A/cm2 at 77 K. The existence of only one grain boundary, however, can reduce the Jc by orders of magnitude. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115086
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  • 9
    Digitale Medien
    Digitale Medien
    Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1853-1855 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H6 (1% in H2). The growth temperature was as low as 550 °C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2×1022 cm−3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111777
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  • 10
    Digitale Medien
    Digitale Medien
    Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 641-643 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121933
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