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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1942-1944 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structural stability and electrical properties of Sr2FeMoO6 under high pressure at room temperature have been studied using energy dispersive x-ray diffraction with synchrotron radiation and resistance and capacitance measurements. The x-ray diffraction results show that the structure of Sr2FeMoO6 remains stable up to 40 GPa. The equation of state of Sr2FeMoO6 is obtained from the V/V0–P relationship. The bulk modulus B0 and its first-order derivative B0′ of Sr2FeMoO6 were calculated based on the Birch–Murnaghan equation. The electrical resistance undergoes a metallic transition at about 2.1 GPa. The metallic transition may be caused by a change in the electronic structure induced by high pressure. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3139-3144 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Effects of pressure, magnetic field, and Mn-site doping on the magnetic structure and resistive behavior of La0.5(Sr0.53Ca0.47)0.5Mn1−xFexO3 (0≤x≤0.10) have been experimentally studied. The system experiences two magnetic transitions subsequently with decreasing temperature: a paramagnetic to ferromagnetic transition and a ferromagnetic to antiferromagnetic (AFM) transition. The second magnetic transition coincides with a steep resistivity jump. In addition to reducing the critical temperature for the AFM transition (TN), the incorporation of Fe enhances the ferromagnetic order below TN as demonstrated by the gradual increase of magnetization with the content of Fe. Long-range AFM order is replaced by short-range AFM order when x exceeds 0.03, and disappears completely for x〉0.06. The application of pressure or magnetic field depresses the AFM nature of the compounds, resulting in a downward shift of TN at a rate of ∼7 K/GPa or ∼4 K/T. The most interesting observation of the present study is the greatly enhanced resistivity jump at TN, which increase from 1 to 2 orders, after the sample undergoes a pressurizing and then a pressure relieving process. Although high pressure, magnetic field, and Fe doping produce similar effects on the AFM order, the underlying physics is different. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2842-2848 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this paper, a new type of shock associated with magnetic reconnection processes has been explored using a compressible magnetohydrodynamics simulation method. The simulations have shown that, when there are strong field-aligned shear flows at the two sides of a current sheet, the coupling mode between Kelvin–Helmholtz and resistive instabilities will appear; further, reflected shocks and incident shocks can be produced at both sides of the boundary layer. Both the reflected shocks and incident shocks are fast shocks, through which the magnetic field strength, density, and temperature all increase sharply, while the plasma velocity decreases steeply. It is expected that some inhomogeneous structures can be formed at plasma boundary layer regions due to the existence of fast field-aligned shear flow driven shocks. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 1073-1078 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The influence of super-Gaussian velocity distributions on the ion feature of Thomson scattering off two-ion plasmas is studied. The analytical solution to the dispersion equation shows that although both the frequencies of the two (fast and slow) ion-acoustic waves increase with the index of the super-Gaussian, the slow wave is more weakly dependent on the index due to the screening of the light ions. In the case that plasma can sustain two lightly damped ion-acoustic waves, the inferred plasma parameters such as electron temperature and plasma temperature ratio may suffer some errors without consideration of super-Gaussian electron velocity distributions. Since the relative intensity between the resonant peaks of the fast and slow waves is sensitive to the super-Gaussian index, the super-Gaussian velocity distributions may be measurable with Thomson scattering off laser-heated two species ion plasmas. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6788-6790 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: For sputtered Co57Mn43/Si film samples with different ferromagnetic thickness, the spectra of the complex magneto-optical polar Kerr rotation and optical constants were ex-situ measured. For 5 nm-thick Co57Mn43 film, the Kerr rotation around 4.3 eV was enhanced by a factor of about 10 times with lower loss of the signal intensity as compared to the thick film. Numerical calculations show that the enhancement effect is attributed to an interplay between optical properties of Co57Mn43 and substrate Si that has a strong interband transition (E2) near 4.3 eV. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 646-650 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Recent development of electron cyclotron resonance (ECR) ion sources in China is reviewed. Emphasis is put on high charge state ECR ion sources which have been mainly developed in China by Institute of Modern Physics (IMP). Presently two ECR ion sources built by IMP for highly charged ion beams are put into operation for cyclotrons and atomic physics research. The development of high charge state ECR ion sources at IMP has progressed with a new magnetic field configuration, better condition for extraction of highly charged ions, high mirror magnetic field, large plasma volume, and special techniques to provide extra cold electrons. These techniques greatly enhance the production of highly charged ions from IMP ECR ion sources. So far more than 185 eμA of Ar11+ and 50 eμA of Xe26+ were produced by the IMP ECR ion sources. The metallic ion beam production was tested and the first beam 40Ca11+ was provided to the cyclotrons at IMP. The beam intensity of 40Ca11+ could reach 130 eμA. The next part of this article will report the latest progress of 2.45 GHz ECR ion sources in China. A 2.45 GHz compact permanent magnet proton ion source was designed and constructed by IMP. A new microwave feeding system is applied on this ion source. The ion source is able to deliver 90 mA of mixed ion beam (H1++H2++H3+) after preliminary commissioning. The article also mentions a small 2.45 GHz ECR ion source which was built by Sichuan University and used for industry applications. The dependence of plasma density and electron temperature on radio frequency power, neutral gas pressure, and different microwave windows was measured by a Langmuir probe on this ion source. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 427-429 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The domain structures in a ferroelectric thin film are studied using a phase-field model. A cubic-to-tetragonal ferroelectric phase transition in lead titanate thin film is considered. Both elastic interactions and electrostatic interactions are taken into account. The focus is on the effect of electrical boundary conditions on the domain morphologies and volume fractions. It is shown that different electric boundary conditions may have a significant effect on the domain structures. © 2002 American Institute of Physics.
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 973-975 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural planar defects in the SrBi2Ta2O9 (SBT) films with 10 mol % excess Bi grown in Pt/TiO2/SiO2/Si substrates by metalorganic deposition have been observed by high-resolution electron microscopy. It was found that these stacking defects were planar defects with extra Bi–O planes normal to the c axis. These structural defects are expected to effectively improve the ferroelectric response and fatigue-resistance characteristics of SBT films because of the extra Bi–O planes having higher strucutral flexibility and alleviating the mechanical stresses and strains as well as injected-charge problems. © 2001 American Institute of Physics.
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3878-3880 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. © 2001 American Institute of Physics.
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 812-814 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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