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  • 11
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Disc displacement is accepted as one of major findings in temporomandibular disorders (TMD). However, the associations of disc positions with morphological and positional changes of temporomandibular joint (TMJ) components and lateral pterygoid (LP), TMD clinical symptoms, and occlusion have rarely been discussed quantitatively. In this study, the morphological and positional changes of TMJ components and LP were assessed by means of magnetic resonance imaging (MRI) and tomography of the TMJ in 41 TMD and nine control (CN) subjects. Disc positions in TMD subjects were divided into normal position (NP) and anterior displacement with and without reduction (ADR+ and ADR−, respectively). From MRI scans and tomograms, the morphological and positional changes of TMJ components and LP were measured and compared among CN, NP, ADR+ and ADR− groups. Correlations between these measurements and the scored clinical symptoms and occlusal factors were analysed in TMD subjects. The results indicated that: (1) TMJ osseous structures and LP showed no significant difference among CN and the three TMD groups, except for a posterior seat of condyle and shorter/steeper condylar movement during jaw opening; (2) disc length and inclination were significantly shorter and steeper, respectively, in ADR+ and ADR−; (3) disc positions were not specified by clinical symptoms and occlusal factors, except for the dominant TMJ sounds in ADR+; (4) an uncoordinated movement of the condyle/disc complex was found in ADR+ and/or ADR−; (5) TMJ osseous structures and the disc were weakly associated with clinical symptoms and occlusal factors. However, the LP showed negative associations with palpable pain for both the TMJ and jaw muscles and the static occlusal factors. These findings suggest that TMJ internal derangements are more related to the positional changes or spatial relationships of TMJ components but less to the individual morphologies of TMJ osseous structures, disc and LP, as well as specific clinical symptoms and occlusal factors, which might be in disagreement with a large body of previous statements.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Weed research 44 (2004), S. 0 
    ISSN: 1365-3180
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: A radiolabelling method is generally used to determine the foliar uptake of xenobiotics. This technique cannot provide any information on the localization of chemicals inside leaf tissues. The influence of an alcohol ethoxylate surfactant on the uptake of three fluorescent dyes, difluorofluorescein (hydrophilic), rhodamine B (moderately lipophilic) and a naphthalimide dye (lipophilic), into the leaves of three contrasting species, bean (Vicia faba), wheat (Triticum aestivum) and cabbage (Brassica oleracea), at 16 h after treatment was measured using a conventional wash-off method and also visualized in vivo by confocal laser scanning microscopy (CLSM). Whereas the lipophilic dyes showed greater intrinsic uptake than the hydrophilic one, the enhancing effect of the surfactant on uptake was more pronounced for the latter. CLSM revealed that the presence of the surfactant increased the transport of difluorofluorescein into the epidermal cells of bean and wheat leaves, but not cabbage leaves. Rhodamine B showed greatest transcuticular diffusion in all three species, but most of the dye moved into the vacuole of the epidermal cells. The naphthalimide dye was strongly retained by the wax–cuticle layer of all species, even in the presence of the surfactant. CLSM has proven to be an attractive tool for studying xenobiotic diffusion. The results obtained using fluorescent dyes are believed to be applicable to the foliar uptake of herbicides.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 1073-1078 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of super-Gaussian velocity distributions on the ion feature of Thomson scattering off two-ion plasmas is studied. The analytical solution to the dispersion equation shows that although both the frequencies of the two (fast and slow) ion-acoustic waves increase with the index of the super-Gaussian, the slow wave is more weakly dependent on the index due to the screening of the light ions. In the case that plasma can sustain two lightly damped ion-acoustic waves, the inferred plasma parameters such as electron temperature and plasma temperature ratio may suffer some errors without consideration of super-Gaussian electron velocity distributions. Since the relative intensity between the resonant peaks of the fast and slow waves is sensitive to the super-Gaussian index, the super-Gaussian velocity distributions may be measurable with Thomson scattering off laser-heated two species ion plasmas. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6788-6790 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For sputtered Co57Mn43/Si film samples with different ferromagnetic thickness, the spectra of the complex magneto-optical polar Kerr rotation and optical constants were ex-situ measured. For 5 nm-thick Co57Mn43 film, the Kerr rotation around 4.3 eV was enhanced by a factor of about 10 times with lower loss of the signal intensity as compared to the thick film. Numerical calculations show that the enhancement effect is attributed to an interplay between optical properties of Co57Mn43 and substrate Si that has a strong interband transition (E2) near 4.3 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1942-1944 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural stability and electrical properties of Sr2FeMoO6 under high pressure at room temperature have been studied using energy dispersive x-ray diffraction with synchrotron radiation and resistance and capacitance measurements. The x-ray diffraction results show that the structure of Sr2FeMoO6 remains stable up to 40 GPa. The equation of state of Sr2FeMoO6 is obtained from the V/V0–P relationship. The bulk modulus B0 and its first-order derivative B0′ of Sr2FeMoO6 were calculated based on the Birch–Murnaghan equation. The electrical resistance undergoes a metallic transition at about 2.1 GPa. The metallic transition may be caused by a change in the electronic structure induced by high pressure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3139-3144 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of pressure, magnetic field, and Mn-site doping on the magnetic structure and resistive behavior of La0.5(Sr0.53Ca0.47)0.5Mn1−xFexO3 (0≤x≤0.10) have been experimentally studied. The system experiences two magnetic transitions subsequently with decreasing temperature: a paramagnetic to ferromagnetic transition and a ferromagnetic to antiferromagnetic (AFM) transition. The second magnetic transition coincides with a steep resistivity jump. In addition to reducing the critical temperature for the AFM transition (TN), the incorporation of Fe enhances the ferromagnetic order below TN as demonstrated by the gradual increase of magnetization with the content of Fe. Long-range AFM order is replaced by short-range AFM order when x exceeds 0.03, and disappears completely for x〉0.06. The application of pressure or magnetic field depresses the AFM nature of the compounds, resulting in a downward shift of TN at a rate of ∼7 K/GPa or ∼4 K/T. The most interesting observation of the present study is the greatly enhanced resistivity jump at TN, which increase from 1 to 2 orders, after the sample undergoes a pressurizing and then a pressure relieving process. Although high pressure, magnetic field, and Fe doping produce similar effects on the AFM order, the underlying physics is different. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 812-814 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4559-4561 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With Bi3TiNbO9 (BTN) ferroelectric samples, in situ electrical-field-induced growth of ferroelectric thin films was demonstrated to control the films' microstructure and manipulate their ferroelectric properties. BTN films on Ti/SiO2/Si substrates were grown at a relatively low temperature (650 °C) with a biased electrical field during pulsed-laser deposition. The (001) orientation of the films, which makes no contribution to their polarization, was effectively reduced by the in situ electrical field of strength of 70 V/cm. This results in a large increase of remnant polarization from 1.1 to 6.2 μC/cm2, and reduction of the coercive field from 70 to 50 kV/cm, comparing the films grown freely under the same condition. Furthermore, the films showed an excellent fatigue-free property of up to 1010 switching cycles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 634-636 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of a pseudoquaternary Heusler alloy, Ni52Mn16Fe8Ga24, have now been synthesized. The substitution of Fe for Mn strengthens the magnetic exchange interactions, increasing the Curie temperature to 381 K. The Fe also increases the Ni magnetic moment to 0.41 μB relative to that in the stoichiometric Heusler composition. The strain accompanying the martensitic transformation is 2.4% in zero field and can be enhanced to 4.2% by a field of 1.2 T. A field-induced strain of 1.15% has been induced along [001] in unstressed crystals with magnetic fields of 1.2 T applied at 291 K. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4334-4336 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of flux on the growth of ripples on Si(111) under bombardment of oblique, 1 keV O2+ beams was investigated. We found that a low flux leads to a significantly higher ripple growth rate per ion than a high flux. This effect is attributed to a reduction in the viscous flow of the amorphized material. At low fluxes, the viscous flow is reduced because there is more thermal annealing of the radiation damage. Current models of surface roughening remain valid if the flux dependence of the viscous flow is taken into account. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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