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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4364-4368 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A stainless-steel chamber has been constructed and interfaced to a Fourier transform infrared spectrometer for the purpose of studying laboratory simulated atmospheric aerosols and clouds. The chamber is cylindrical in design and is comprised of a double-walled inner assembly that resides within an outer vacuum jacket. The volume of the aerosol sample region is 28 L. By circulating refrigerated methanol between the double walls of the inner assembly, constant temperature control of the sample region can be maintained between 187 and 300 K. A study of temperature uniformity within the chamber at 291, 240, and 187 K revealed a standard deviation in temperature of 1.6 K as determined from measurements made using five copper–constantan thermocouples. Good agreement is obtained between thermocouple measured temperatures and rotational temperatures computed from infrared absorption spectra of methane gas. The chamber described here has been used to examine heterogeneous chemistry of solid powder samples. A technique of generating an aerosol sample by rapidly dispersing a solid powder in a gas is presented. The half-life of a γ-alumina aerosol sample was measured to be 25 min. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To improve inherent shortcomings of statistical methods and apply them to the extraction of plasma equilibrium parameters in a fast timescale for real-time plasma control, new concepts of statistical methods such as principal component analysis-based neural network (NN), functional parametrization (FP)-based NN and double network are introduced by modifying NN and FP. These new methods are benchmarked and compared with the conventional techniques of NN and FP in a simple single-filament system. As a result of their applications to identification of plasma equilibrium parameters in the Korea Superconducting Tokamak Advanced Research tokamak, particularly, the double network concept among them has successfully achieved the improvement of drawbacks in the conventional methods. It is shown that more reliable results from the double network method can be obtained by combining several different statistical treatments as a primary network. Even in the case of nonoptimized methods united as a primary network, quite acceptable results can be achieved in the double network method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5233-5235 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface-energy-induced secondary or tertiary recrystallization by grains with a specific surface plane can be freely governed in thin-gauged 3% Si–Fe strips by controlling the bulk content of sulfur and annealing atmosphere. During a vacuum or hydrogen annealing process, a convex profile in segregated-sulfur concentration is formed due to evaporation or desorption of segregated sulfur as a hydrogen sulfide, corresponding to a trough in magnetic induction. High magnetic induction is obtained after the annealing treatments. Final annealing under an argon atmosphere caused a saturation in segregated-sulfur concentration with annealing time. Under this extremely high segregated sulfur, grains of high index crystal plane including {111} continued to grow, resulting in low magnetic induction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4115-4115 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To match the requirements for development of transformer cores with lower iron losses, many new materials are under development including amorphous materials, 6.5% Si–Fe sheets and thin gauged 3% Si–Fe sheets. Among these materials, the thin gauged 3% Si–Fe sheets are attracting attention due to their good magnetic properties and scientific interest. Arai et al. reported that the magnetic properties of the sheets were comparable to those of the amorphous materials and (110)[001] preferred orientation of the sheets are developed by tertiary recrystallization.1 The 100 μm thick 3% Si–Fe sheets were prepared via conventional metallurgical processes including melting and casting, hot rolling to 25 mmT at 1200 °C, first cold rolling to 0.5 mmT, intermediate annealing at 800 °C for 30 min, second cold rolling to 0.25 mmT, intermediate annealing at 800 °C for 30 min, final cold rolling to 100 μm and final annealing at 1200 °C for 1 h in a vacuum of 5×10−6 Torr. Among these processes, the cold rolling process is an important one because preferred orientation of the sheets was developed in the process. Nakano et al. reported that there was an optimum cold rolling ratio to get required magnetic properties of the sheets.2 Recently, we found that the reduction rate, i.e., number of passes, as well as reduction ratio affected the preferred orientation and magnetic properties of the sheets. The number of passes in the first cold rolling process was changed from 7 to 60 and B10 values of the final sheets were changed from 1.30 to 1.84 T according to the number of passes. From x-ray experiments, it was found that intensity of (110) peak in the cold rolled and annealed sheets strongly affected the magnetic properties of the final sheets. We will discuss the relationship between the reduction rate and preferred orientation, and magnetic properties of the thin gauged 3% Si–Fe sheets. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 43 (1995), S. 2728-2734 
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 237-243 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing incidence x-ray scattering and x-ray diffraction techniques have been employed to investigate the microstructures in various ZnSe-based semiconductor thin films grown on GaAs substrates by molecular beam epitaxy and metalorganic chemical vapor deposition methods. The results are also used for a comparison of the interfacial roughness and overall quality of the II–VI thin films prepared by these two different growth methods. Structural parameters such as the interfacial roughness and layer thickness obtained from the scattering measurements and lattice constants obtained from the x-ray diffraction pattern around the GaAs(004) peak can be correlated with the film deposition rate, compound composition, and lattice strain in the epilayers. We thus demonstrate that x-ray scattering techniques in conjunction with diffraction measurements are useful tools for nondestructive characterization of buried interfaces in semiconductor layer materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Thomson scattering system on the Hanbit magnetic mirror device has been installed to measure the electron temperature and density of the plasma in the central cell. The configuration is based on a standard 90° scattering scheme. The optical system consists of a Q-switched Nd:YAG laser, input optics, collection optics, spectrograph optics, detectors, and a data acquisition system. Although the laser beam path is about 50 m long and the background emissions are not low, the electron temperature measurements have been made at a single point on a shot-by-shot basis, in which the stray light was considerably suppressed by using a beam dump, a viewing dump, and baffles. The measured electron temperature is about 50–70 eV in experiments for plasma production and heating by ICRF of 200-kW-rf power using a slot antenna. A description of the installed system and the experimental results are presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tomographic imaging of the ionosphere is a recently developed technique that uses integrated measurements and computer reconstructions to determine electron densities. The integral of electron density along vertical or oblique paths is obtained with radio transmissions from low-earth-orbiting (LEO) satellite transmitters to a chain of receivers on the earth's surface. Similar measurements along horizontal paths can be made using transmissions from Global Position System (GPS) navigation satellites to GPS receivers on LEO spacecraft. Also, the intensities of extreme ultraviolet (EUV) emissions can be measured with orbiting spectrometers. These intensities are directly related to the integral of the oxygen ion and electron densities along the instrument line of sight. Two-dimensional maps of the ionospheric plasma are produced by analyzing the combined radio and EUV data using computerized ionospheric tomography (CIT). Difficulties associated with CIT arise from the nonuniqueness of the reconstructions, owing to limited angle measurements or nonoptimal receiver location. Improvements in both reconstruction algorithms and CIT measurement systems are being implemented to overcome these difficulties. New imaging systems being developed employ CIT for large area mapping of the plasma densities in the ionosphere. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4994-4999 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen ions were implanted into ZnSxSe1−x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in a N2 ambient. Schottky structures employing the implanted p-type ZnSxSe1−x were fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current–voltage (I–V), current–voltage temperature (I–V–T), and high frequency capacitance–voltage (C–V) measurements. PL spectra showed a clear donor–acceptor pair (DAP) recombination at an energy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respectively, regardless of the postannealing temperatures. The diode conduction in forward bias proceeds by the combination of thermionic and tunneling emission. C–V measurement proved the maximum doping concentration to be around 1017 cm−3 after ion implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2328-2333 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-i-n photodiodes were fabricated on nitrogen ion implanted undoped ZnSe/n-type ZnSe epilayers grown on n+GaAs (100) substrates by molecular beam epitaxy. To obtain a quasi-uniform p layer doping profile, nitrogen ions at multiple energies and ion doses were implanted at room temperature. The activation of implanted species was carried out by an optimized post-annealing in a nitrogen ambient. Optical studies were performed on the implanted/annealed devices by photoluminescence spectroscopy at 10 K, which indicated donor–acceptor pairs at an energy of 2.7 eV and its phonon replicas with 30 meV intervals. The circular p-i-n diodes with a 1 mm diam contact area showed a device breakdown voltage to be linearly dependent on the thickness of the undoped ZnSe epilayer. For p-i-n diodes fabricated on an initial 0.5 μm thick undoped ZnSe layer, an ideality factor of 1.19 and a reverse bias breakdown voltage of 12 V was observed. A large photocurrent, good linearity with light intensity, and low dark current were observed. A photocurrent/dark current ratio 〉105 was obtained at an illumination intensity of 100 mW/cm2. These devices exhibited a responsivity of 0.025 A/W at a wavelength of 460 nm through the top 200 Å thick metal contacts.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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