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  • 1990-1994  (31)
  • 11
    Electronic Resource
    Electronic Resource
    Design and fabrication of asymmetric strained layer mirrors for optoelectronic applications (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 444-446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design of thin-film mirrors is optimized for strained layer materials systems. It is shown that the use of asymmetric structures produces only minor loss in reflectivity per mirror period, while greatly extending the number of periods that can be grown in a defect-free mode. As applied to the GexSi1−x/Si strained layer system, the net result is an enhancement of reflectivity, with 1.3 μm mirrors achieving peak values near 75%. The approach is applicable to other materials systems and should yield even higher reflectivities in situations where wider ranges in index of refraction are available.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110018
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  • 12
    Electronic Resource
    Electronic Resource
    Finite element analysis of stress relaxation in thin foil plan-view transmission electron microscopy specimens (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2291-2293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Finite element analysis has been used to model stress relaxation in thin foil plan-view transmission electron microscope specimens of strained epitaxial layers. Relaxation of the orders of 2%–20%, relative to the unthinned specimen, are determined for lattice strains of the order 1%, epitaxial layer thicknesses in the hundreds of angstrom regime and sample thicknesses of the order 1 μm. These calculations show that under carefully controlled experimental conditions, the stresses in thinned samples used for in situ electron microscope observations of dislocation dynamics in strained epitaxial layers are not substantially different from those in unthinned structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110507
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    Paper (German National Licenses)
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  • 13
    Electronic Resource
    Electronic Resource
    Misfit dislocation microstructure and kinetics for InxGa1−xAs/InP(100) and (110) interfaces under tensile and compressive stress (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Misfit dislocation microstructures and strain relaxation kinetics are studied for 1% lattice mismatched (100) and (110) interfaces under tensile and compressive stress in the InxGa1−xAs/InP system. Misfit dislocations are observed to be either 60° a/2〈101〉 total [for (100) compressive and (110) tensile configurations] or 90° a/6〈112〉 partial [dominant for (100) tensile and (110) compressive configurations] types. Relaxation kinetics are observed to be substantially faster for 90° a/6〈112〉 than 60° a/2〈101〉 dislocations. This produces significantly different relaxation rates for (100) versus (110) interfaces and compressive versus tensile stress. The relaxation is also found to be an extremely strong function of excess stress, with an increase of about two orders of magnitude of dislocation density per 100 MPa increase in excess stress for interfacial dislocation densities in the range 102–106 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109670
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    Paper (German National Licenses)
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  • 14
    Electronic Resource
    Electronic Resource
    Dislocation glide in {110} planes in semiconductors with diamond or zinc-blende structure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2206-2208 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of the secondary a/2〈110〉{110} glide systems as observed by transmission electron microscopy in epitaxial Ge(Si) and InGaAs layers grown on comparatively highly misfitting substrates, is rationalized in terms of a mechanical equilibrium analysis that includes a frictional force on the gliding dislocations. The conditions for occurrence of further secondary glide planes, such as {113} and {100}, are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109443
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  • 15
    Electronic Resource
    Electronic Resource
    Growth of GexSi1−x alloys on Si(110) surfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 964-966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth of GexSi1−x alloys on Si(110) surfaces. For this growth normal, there are only two inclined {111} glide planes intersecting the interfacial plane. Both intersections are along the same in-plane [11¯0] direction, thus classic a/2〈110〉{111} glide misfit dislocations can form along only one interfacial direction. This produces an orthorhombic unit cell following strain relaxation by misfit dislocations. At sufficiently high stresses, previously unobserved misfit dislocation structures are activated. The critical thickness for misfit dislocation introduction is found to be shifted to lower Ge compositions with respect to growth on the (100) surface, consistent with a higher angular factor resolving the interfacial component of the dislocation Burgers vector in the (110) system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106316
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  • 16
    Electronic Resource
    Electronic Resource
    Interfacial structure and its effect on nucleation and growth energetics in mesotaxial Si/CoSi2/Si structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3467-3469 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show how analysis of the stacking sequences at CoSi2/Si interfaces formed by 100 kV Co+ implantation into Si (001) or (111) predicts the formation of partial dislocations or stacking faults at precipitate corners. The presence and nature of the stacking fault can uniquely identify the bonding coordination at the CoSi2/Si(111) interface. Consideration of the interfacial structure for twinned (B) and untwinned (A) {111} interfaces helps explain the competitive nucleation and growth of A vs B precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105655
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    Paper (German National Licenses)
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  • 17
    Electronic Resource
    Electronic Resource
    Changes in electrical device characteristics during the in situ formation of dislocations (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1426-1428 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By adding electrical connections to a specimen heating holder for a transmission electron microscope (TEM), we have measured the characteristics of electronic devices, such as diodes, while they remain under observation. We have made TEM specimens from metastable GeSi/Si p-n junction diodes and introduced dislocations by heating in situ. We describe the changes in the electrical properties of these devices as dislocations form. We find that a generation-recombination process does not explain our results and instead, suggest a model based on the creation of point defects or the diffusion of metals during the formation of dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108649
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  • 18
    Electronic Resource
    Electronic Resource
    Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2802-2804 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1−x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60° a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, h〈hx, but greater on the 60° a/2〈110〉 dislocations for h(approximately-greater-than)hx. The sensitive calculated dependence of hx upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m−2 for x∼0.3 in GexSi1−x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108068
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    Paper (German National Licenses)
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  • 19
    Electronic Resource
    Electronic Resource
    Improvement in heteroepitaxial film quality by a novel substrate patterning geometry (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1468-1470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a novel substrate patterning geometry which can reduce epilayer threading dislocation densities by up to two orders of magnitude in GexSi1−x/Si(100) (x∼0.15–0.20) het- eroepitaxial layers. The basic pattern consists of a two-dimensional array of ∼2 μm diameter oxide pillars which are separated from each other by varying pitch dimensions, and which are staggered slightly from their neighbors with respect to the in-plane 〈011〉 directions. This ensures that a misfit dislocation nucleating at any point within the epilayer must eventually propagate into one of the pillars, where the threading end will be terminated. Prospects for surface planarization and overgrowth of the pillars are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107273
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  • 20
    Electronic Resource
    Electronic Resource
    Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1327-1329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed new misfit dislocation configurations and slip systems in (Al)GaAs/InxGa1−xAs/GaAs(100) heterostructures for x≥0.4. Dislocations are observed running along 〈001〉 directions in the interface, which are inconsistent with conventional glide of misfit dislocations on {111} planes in the zincblende lattice. Diffraction contrast analysis in a transmission electron microscope (TEM) shows that these dislocations are of the edge type with b=a/2〈011〉, inclined at 45° to the interface. In situ TEM heating experiments reveal dislocation propagation velocities ∼tens of μm s−1 at 600 °C, suggesting that they are moving by glide, rather than climb. The only slip planes consistent with these observations are {101} planes inclined to the interface. This represents a new relaxation mechanism in highly strained semiconductor heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107332
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