Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Radiochemical Tracing of Fluid Catalyst Flow (1960)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 52 (1960), S. 989-992 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50612a022
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A phenomenological description of strain relaxation in GexSi1−x/Si(100) heterostructures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5837-5843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe how in situ observation of strain relaxation of Gex Si1−x /Si(100) heterostructures in a transmission electron microscope enable us to obtain the fundamental parameters which describe the nucleation, propagation, and interaction of misfit dislocations. Activation energies and prefactors are obtained for the nucleation and propagation processes for x in the range 0.20–0.35, and a simple model to account for dislocation interactions is developed. These measured parameters are then incorporated into a predictive model of strain relaxation which successfully reproduces experimental data. This model relies only upon parameters which can be directly measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343604
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Detailed atomic scale structure of AlInAs/GaInAs quantum wells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2688-2692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantification of high-resolution transmission electron microscopy (HRTEM) lattice images and detailed luminescence line-shape analysis is used to determine the atomic structure of GaInAs quantum wells (QWs) between AlInAs barriers. By careful analysis of a statistically large number of HRTEM images, we are able to measure the standard deviation in the mean quantum-well width to better than one (200) monolayer. Statistical analysis of the temperature dependence of the luminescence yields QW width distribution functions and variations of the mean QW width across the sample with a precision of better than 0.2 nm in quantitative agreement with the transmission electron microscopy results. No large and smooth islands with monolayer steps in between but rather long-range mean band-gap fluctuations are observed. Spectral broadening is found to be induced by well-width-dependent roughness of inequivalent growth surfaces and by clustering in the barriers for extremely narrow wells of the order Lz≈1 nm. Our results indicate a pronounced surface roughening of InGaAs at 640 °C. The mean height of steps of a maximum width of 5 nm at the InGaAs surface increases from 1 to 2 monolayers for an increase of well width from ≈1 to 2.5 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342753
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Growth of GeSi/Si strained-layer superlattices using limited reaction processing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2407-2409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe/Si superlattices were grown using limited reaction processing. Each multilayer structure was fabricated in situ by changing the gas composition between high-temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly deposited and were examined using transmission electron microscopy, sputtering Auger electron spectroscopy, and Rutherford backscattering. Si/SiGe interfaces are abrupt to within a few monolayers, establishing for the first time the use of a chemical vapor deposition technique to fabricate abrupt GeSi/Si-based heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337960
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Quantitative three-dimensional reconstruction of geometrically complex structures with nanoscale resolution (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 330-334 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A technique to reconstruct high resolution three-dimensional structural images and chemical maps of geometrically complex features is presented. A focused ion beam microscope is used to collect secondary electron images and secondary ion mass spectroscopy elemental maps as a function of depth in the sample. These images and elemental maps are then used to reconstruct volume images and chemical maps using shape-based interpolative methods with 25 nm lateral resolution and approximately 10 nm depth resolution. From these reconstructions, fundamental parameters such as connectivity, the volume fraction, and surface areas of features of interest can be calculated directly. These techniques open broad new opportunities for understanding three-dimensional structural and chemical relationships in materials research. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430550
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Comparison of pulsed laser and furnace annealing of nitrogen-implanted silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 193-196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied pulsed ruby laser and furnace annealing of high-dose (D〉1017 N/cm2) 50-keV nitrogen-implanted silicon. Using Rutherford backscattering and channeling, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation, and nitride formation. As has been previously reported, during furnace annealing at or above 1200 °C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4) layer. In contrast, pulsed laser melting produces a buried amorphous layer containing silicon and nitrogen with only very small amounts of polycrystalline silicon nitride below a layer of polycrystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335707
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2214-2216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination dynamics of excess charge carriers around misfit dislocations in strained layer GaAs/In0.23Ga0.77As/GaAs quantum wells are directly imaged with spectrally and time-resolved infrared cathodoluminescence imaging with subnanosecond time resolution. This unique experimental approach for the first time allows the imaging of excitonic lifetime around dislocations in such quantum wells. A strong reduction is observed. The quenching by more than two orders of magnitude of the quantum efficiency upon an increase of the line dislocation density from 4×103 to 5×106 m−1 is explained quantitatively by a diffusion model. The critical layer thickness is determined to agree well with the "mechanical equilibrium of forces'' model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344288
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4723-4729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the role of strained layer superlattices in threading dislocation reduction in the growth of Ge0.5Si0.5 alloys on Si(100) substrates by molecular-beam epitaxy. Several superlattice structures are studied with zero, negative, and positive net strains with respect to a Ge0.5Si0.5 buffer layer. Control samples consisting of uniform strained layers are also grown for each superlattice structure. Transmission electron microscopy analysis of defect densities is found to be hampered by defect losses from thin foils, particularly in the plan view geometry. It is found that although strained interfaces are effective at deflecting threading dislocations into the interfacial plane, little surface threading dislocation density reduction is observed as a function of the presence of the superlattices for dislocation densities of the order 108 cm−2. This observation may be understood in terms of threading dislocation propagation at strained interfacial planes, and a simple predictive model is developed for defect interaction probabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343223
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Texture transformations in reactive metal films deposited upon amorphous substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2635-2640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results that demonstrate how interfacial reactions between a metal film and substrate during deposition affect microstructural evolution. In particular, we investigate Ti films deposited on amorphous SiO2 using ultrahigh vacuum transmission electron microscopy. Ti films were deposited in situ at room temperature and were examined using Auger electron spectroscopy and transmission electron microscopy. An initial [hk0] preferred orientation developed in films up to 2.5 nm in thickness. Films between 2.5 and 5.0 nm developed a [001] preferred orientation that persisted in films up to 20.0 nm thick. These data, in conjunction with Auger electron spectra and dark-field microscopy, suggest that growth of Ti films on SiO2 is directly affected by reactions at the Ti/SiO2 interface and that this reaction is responsible for the observed change in preferred orientation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337078
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Interface imperfections in metal/Si multilayers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2675-2678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and optical properties of Mo/Si and Ru/Si x-ray multilayers prepared by sputter deposition in argon have been examined using high-resolution transmission electron microscopy, optical profilometry, and x-ray and soft x-ray reflectance. We find that for Ru/Si, similar to previous results for Mo/Si, lower argon pressure during deposition results in smoother layers and higher reflectance. For low-pressure deposited multilayers, interfacial roughness is negligible compared to interfacial diffuseness; the presence of amorphous interlayer regions in both of these systems is the major cause of reduced reflectance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351040
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...