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  • 11
    Electronic Resource
    Electronic Resource
    Interlaboratory comparison of the depth resolution in sputter depth profiling of Ni/Cr multilayers with and without sample rotation using AES, XPS, and SIMS (1993)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 20 (1993), S. 621-626 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In order to provide a consistent judgment on the capabilities and limitations of the sample rotation approach to depth profiling, a round robin (interlaboratory comparison) was organized between four laboratories on identical samples using AES, XPS and SIMS. The sample consisted of an Ni/Cr multilayer with a total of 16 alternating Ni and Cr layers with a singly layer thickness of 30 nm. Sputter profiling was performed with a rastered beam of 3 keV Ar+ ions at an incidence angle of 45° to the surface normal, with and without sample rotation. Test runs were additionally performed with BCR standard samples of 30 nm thick Ta2O5 layers on Ta. For sample rotation, depth profiles of the Ni/Cr multilayer by AES and SIMS show a marked improvement in depth resolution of about a factor of two for lower sputter depth (30 nm) and four to five for greater sputter depth (450 nm). The depth resolution deteriorates with depth for stationary samples, but is found to be independent of depth when using sample rotation. For XPS, the depth resolution improvement for sample rotation is less pronounced. Agreement between the different laboratories and techniques is excellent and clearly demonstrates the capabilities of sample rotation in depth profiling studies.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740200803
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  • 12
    Electronic Resource
    Electronic Resource
    Quantification of preferential sputtering and contamination overlayer effects in AES sputter profiling (1984)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 6 (1984), S. 78-81 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A model calculation is presented for the quantitative evaluation of AES sputtering profiles of thin layers in the case of preferential sputtering and a contamination overlayer. The model is based on the statistical contribution to depth resolution, the escape depth effect correction and the preferential sputtering model of Ho et al. (1976). Applications to measured AES sputtering profiles of the anodic oxides Ta2O5 and Nb2O5 allow the determination of the thickness and the oxygen content of the contamination overlayer.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740060208
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  • 13
    Electronic Resource
    Electronic Resource
    Temperature dependence of the phosphorus segregation at the twin boundary in an Fe-4 at.% Si alloy (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 546-551 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: AES of in situ fractured bicrystals of an Fe-4 at.% Si alloy containing traces of phosphorus was used to study the temperature dependence of the segregation at the symmetrical {112} (coherent twin) grain boundary between 773 and 1173 K. The observed enrichment of P decreases with temperature, whereas that of Si increases slightly. This behaviour is described by a mutual repulsive interaction coefficient α′ = 92 kJ mol-1 of P and Si and the corre-sponding pure binary segregation enthalpies ΔH0P = -7.9 kJ mol-1 and ΔH0Si = -3.0 kJ mol-1, the absolute values of which are considerably lower than those reported for polycrystalline samples of Fe—P and Fe—Si. The differences are explained on the basis of orientation, concentration and interaction effects.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7401601113
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  • 14
    Electronic Resource
    Electronic Resource
    An AES study of particles in the welding fumes of mild and stainless steel (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 563-564 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Additional Material: 1 Tab.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7401601118
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  • 15
    Electronic Resource
    Electronic Resource
    Depth profiling with sample rotation: Capabilities and limitations (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 304-309 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Depth profiling with sample rotation has become a frequently applied method to obtain the in-depth distribution of composition in thin films with high resolution. Sample rotation strongly diminishes the effect of local variations of the ion beam intensity and of the sputtering yield, which are the main cause of increasing surface roughness during sputtering and therefore of profile broadening. Capabilities and limitations of rotational profiling are considered with respect to its dependence on various parameters, such as inhomogeneity of the ion beam instensity, ion incidence angle and rotation speed. In particular, it is shown that non-linear components and excentric movement of the sample lead to periodic features in the profile and to non-vanishing degradation of depth resolution with depth. For smooth sample surfaces, depth resolution improves with increasing ion incidence angle but is much less pronounced, as for profiling with stationary samples. For originally rough surfaces, the deterioration of depth resolution with increasing ion incidence angle is considerably reduced. The key parameter for optimized conditions in rotational profiling is the ratio of sputtering rate and rotation speed. The minimum necessary, useful rotation speed depends on this ratio and on the magnitude of other contributions to the depth resolution that are not affected by sample rotation.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740210507
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  • 16
    Electronic Resource
    Electronic Resource
    Interfacial reactions and silicide formation in Si/Ni/Si and Si/Cr/Si sandwich layersPaper presented at ECASIA 93, Catania, Sicily, 4-8 October 1993. (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 560-565 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The preparation of well-characterized silicide thin films for microelectronics needs a control of interfacial reactions and diffusion processes during heat treatment of metal/semiconductor systems. Two sandwich structures of Si(33 nm)/Me(50 nm)/Si(33 nm), where Me = Ni or Cr, with a total thickness of each structure of 116 nm were sputter deposited onto smooth silicon-(111) substrates. The reactions of both metals with amorphous silicon thin films were activated in a differential scanning calorimeter (DSC), at a heating rate of 40°C/min-1, between room temperature and different higher temperatures. Auguer electron spectroscopy depth profiles showed that the Si/Ni/Si sandwich structure reacted almost completely during heat treatment up to 320°C and formed reaction products with a composition close to Ni3Si2. Selected area diffraction patterns revealed that this is a mixture of Ni2Si and NiSi silicides. A much less pronounced reaction between Si and Cr was observed in the Si/Cr/Si sandwich structure, even with heating to 630°C, resulting in CrSi2 silicide and different Cr-Si solid solutions. The results of AES depth profiling studies of the thermally treated sandwich structures are discussed in terms of diffusion processes, movement of interfaces and formation of silicides. The additional information obtained with differential scanning calorimetry and transmission electron microscopy enables a detailed identification of reaction products formed in the early stage of the thermally treated Si/Me/Si structures.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740210808
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  • 17
    Electronic Resource
    Electronic Resource
    Oxidation of NiCr and NiCrFe alloys at room temperature (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 437-438 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120719
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  • 18
    Electronic Resource
    Electronic Resource
    Factor analysis and superposition of Auger electron spectra applied to room temperature oxidation of Ni and NiCr21Fe12 (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 59-65 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Low energy valence band Auger transitions are advantageous for the study of the initial stages of metal and alloy oxidation owing to their high surface sensitivity and to their chemical bonding features. However, the latter property leads to difficulties in quantification of the spectra, particularly by using peak-to-peak heights in the derivative mode. Therefore, two other methods are applied for a quantitative evaluation of the different elemental bonding states: (a) superposition of standard spectra according to the least mean squares fitting method and (b) factor analysis. The reliability of both methods is compared for the quantitative determination of the kinetics of oxygen reaction with pure Ni and with a NiCr21Fe12 alloy at oxygen pressures between 10-6 Pa and 10-4 Pa. Although both methods give comparable results, only method (b) allows the determination of the chemisorbed oxygen bonding state on Ni using the low energy Ni M23 VV transition. For the NiCrFe alloy, only method (a) gives a clear distinction between nickel and iron oxides.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740140113
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  • 19
    Electronic Resource
    Electronic Resource
    86. Diffuse Emissionen an Rohrleitungsflanschen - Ein Verbundforschungsprojekt der chemischen Industrie (1999)
    Weinheim : Wiley-Blackwell
    Chemie Ingenieur Technik - CIT 71 (1999), S. 996-997 
    Details
    ISSN: 0009-286X
    Keywords: Chemistry ; Industrial Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cite.330710990
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  • 20
    Electronic Resource
    Electronic Resource
    Charakterisierung keramischer Werkstoffe mit der Auger-Elektronenspektroskopie: Möglichkeiten und Grenzen (1990)
    Weinheim : Wiley-Blackwell
    Materialwissenschaft und Werkstofftechnik 21 (1990), S. 93-104 
    Details
    ISSN: 0933-5137
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Understanding the relationships between mechanical and other physico-chemical properties and the microstructural chemistry is a necessity for a well-controlled development of new materials. A prerequisite for the achievement of this goal is an advanced microanalytical characterization, which can be obtained by application of surface analysis methods. Among these, high resolution Auger electron spectroscopy (HR-AES or Scanning Auger Microscopy, SAM) has proved to be extremely useful for surface, interface and depth profile analysis of ceramic materials. After a short presentation of the principles and the main areas of application, specific advantages are discussed for some examples. Those are e.g. a depth of information in the nanometer range, a sub-micrometer lateral resolution, a relatively high detection sensitivity for the light elements like B, C, N, O, and a small matrix effect in quantitative analysis. The main disadvantages are due to a variety of detrimental electron beam induced effects which are outlined for some examples of oxide and non-oxide ceramics. The generation of electrical charging of insulating ceramics and its avoidance or reduction by appropriate experimental procedures is particularly emphasized.
    Notes: Das für eine kontrollierte Materialentwicklung benötigte Verständnis des Zusammenhangs zwischen mechanischen und anderen physikalisch-chemischen Eigenschaften und dem mikrostrukturellen Aufbau setzt eine leistungsfähige mikroanalytische Charakterisierung voraus, die vor allem durch den Einsatz oberflächenspezifischer Untersuchungsverfahren erhalten werden kann. Unter diesen hat sich insbesondere die hochauflösende Auger-Elektronenspektroskopie (High Resolution Auger-Electron Spectroscopy, HR-AES bzw. Scanning Auger Microscopy, SAM) in Verbindung mit Oberflächen-, Bruchflächen- und Tiefenprofilanalysen bewährt, deren Grundlagen und Haupteinsatzgebiete unter besonderer Berücksichtigung keramischer Werkstoffe vorgestellt werden. Den Vorteilen kleiner Informationstiefe im Nanometerbereich, der hohen Ortsauflösung im Sub-Mikrometer-Bereich, der vergleichsweise hohen Nachweisempfindlichkeit für leichte Elemente wie B, C, N, O sowie der geringen Matrix-Effekte bei der quantitativen Analyse stehen als Nachteile eine Reihe störender elektronenstrahlinduzierter Effekte gegenüber. Diese werden anhand ausgewählter Beispiele für oxidische- und nichtoxidische Keramiken erläutert, wobei besondere Betonung auf die Entstehung von elektrischen Aufladungen bei nichtleitenden Keramiken und deren Vermeidung bzw. Verminderung durch geeignete experimentelle Maßnahmen gelegt wird.
    Additional Material: 14 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/mawe.19900210302
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