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  • 11
    Electronic Resource
    Electronic Resource
    Evidence of N-related compensating donors in lightly doped ZnSe:N (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2200-2202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a nitrogen/argon mixed plasma to dope p-type ZnSe during molecular beam epitaxy. We show that this technique allows control of the net acceptor concentration in the whole range from 1015 to 1018 cm−3. The unique ability to fine tune the doping at very low levels provides new insight into the compensation mechanisms. We provide a direct demonstration that not only the deep but also the shallow compensating donor detected by photoluminescence spectroscopy is a N-related defect. Further, our results show that both these compensating donors are generated from the very onset of N incorporation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123800
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  • 12
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2859-2861 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study through reflection high-energy electron diffraction (RHEED) the growth by molecular-beam epitaxy of the II-VI compound-semiconductor BeTe on GaAs substrates. Long lasting RHEED oscillations reveal that BeTe nucleates on GaAs buffer layers in a two-dimensional mode when the GaAs surface is not Te reacted. The growth temperatures of BeTe and ZnSe are only marginally compatible. We show that the Te- and Be- terminated BeTe surfaces are (2×1) and (3×1) reconstructed, respectively. The transition from (2×1) to (3×1) surface occurs via the formation of a faint (4×1) reconstruction. We determine the surface phase diagram under static as well as growing conditions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121482
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  • 13
    Electronic Resource
    Electronic Resource
    Critical thickness of Zn1−xCdxSe/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 217-219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study through high-resolution x-ray diffraction (HRXRD) and photoluminescence spectroscopy a series of Zn1−xCdxSe/ZnSe multi-quantum-well heterostructures grown by molecular-beam epitaxy on relaxed ZnSe buffer layers, themselves grown on bare GaAs substrates. We show that HRXRD experiments combined with simulations allow one to accurately assess the strain state of the heterostructures which appear to follow closely the Matthews and Blakeslee model [J. Cryst. Growth 27, 118 (1974)]. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120690
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  • 14
    Electronic Resource
    Electronic Resource
    Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3564-3566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the molecular-beam epitaxy of ZnBeSe ternary alloys lattice matched onto GaAs substrates. We demonstrate that these alloys can be grown with a high structural perfection. X-ray linewidths down to 27 arcsec are obtained even though the growth is carried out on bare substrates. Transmission electron microscopy reveals the high quality of the interface. Photoluminescence spectra of undoped layers are dominated by free-exciton recombinations. The excitonic gap is determined to be 2.863 eV at 9 K. Finally, high carrier concentrations are obtained for both n-type and p-type doping. These results are promising in view of fabricating laser diodes with this material system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119234
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  • 15
    Electronic Resource
    Electronic Resource
    Photoluminescence study of ZnSe single crystals grown by solid-phase recrystallization (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1356-1358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate through low-temperature photoluminescence (PL) and selective photoluminescence (SPL) spectroscopies, ZnSe single crystals grown by solid-phase recrystallization. The PL spectra are dominated by the so-called I1deep excitonic line, a neutral–acceptor bound–exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities. Donor–acceptor pair bands are hardly detected. A major characteristic of these samples is the quasiabsence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, I1deep is ascribed to an exciton bound to Zn-vacancies related acceptors. Our results indicate that these ZnSe samples are of high quality and that solid-phase recrystallization is a promising technique to prepare ZnSe epitaxial substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116078
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  • 16
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 957-959 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of BeSe on vicinal Si(001) substrates has been investigated by molecular beam epitaxy. Reflection high energy electron diffraction was used to study the initial growth mode and the surface structure. Efforts have been done at the early steps of the growth in order to optimize the interface quality. Transmission electron microscopy revealed a BeSe layer relaxed with misfit dislocations and stacking faults that are mainly confined near the heterointerface. These results are promising in view of the growth of Zn0.55Be0.45Se alloy that is lattice matched to silicon. There will be many potential applications of this alloy—in the case of a direct band gap—in the frame of Si-based optoelectronic devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122051
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  • 17
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy of high-quality ZnSe homo-epitaxial layers on solid-phase recrystallized substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3221-3223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study through reflection high-energy electron diffraction (RHEED) and low-temperature photoluminescence (PL) spectroscopy the molecular-beam epitaxy of ZnSe homoepitaxial layers on solid-phase recrystallized substrates. We show that with a proper ex situ substrate polishing a two-dimensional (2D) RHEED pattern is readily observed when introducing the substrate into the growth chamber at low temperature. We demonstrate that the in situ pre-growth treatment has a dramatic influence on ZnSe nucleation and that a suitable preparation leads to direct 2D growth of ZnSe layers which exhibit superior optical properties. The PL spectra are dominated by the near-band edge emission, with no deep-level and defect-related lines. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118016
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  • 18
    Electronic Resource
    Electronic Resource
    Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3404-3406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the influence of both the growth rate and the growth temperature on the structural and optical properties of GaAs0.972N0.028/GaAs single quantum wells grown by solid-source molecular beam epitaxy. The results are analyzed in light of the surface phase diagram obtained from in situ reflection high energy electron diffraction. We show that the best quality is achieved at the highest temperature below the onset of alloy decomposition. The use of high growth rates allows one to significantly increase the growth temperature. Our results demonstrate that it is the GaAsN alloy stability which governs the sample properties. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418263
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  • 19
    Electronic Resource
    Electronic Resource
    On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1562-1564 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated by temperature-dependent photoluminescence (PL) spectroscopy as-grown GaInNAs, InGaAs, and GaAsN quantum wells (QWs) embedded in a GaAs matrix. The evolution of the PL peak position and of the PL linewidth shows evidence of a strong carrier localization for the GaInNAs QWs only. The high delocalization temperature, in the 150 K range, indicates the presence of a high density of possibly deep-localizing potential wells. In addition, a higher density of nonradiative recombination centers appears to result in stronger carrier localization. Transmission electron microscopy reveals well defined, flat interfaces, in these comparatively high N-content (yN∼0.04–0.05) QWs. Our results thus demonstrate that the origin of localization in GaInNAs QWs is the concomitant presence of both In and N, which may result in strain and/or composition fluctuations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354153
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  • 20
    Electronic Resource
    Electronic Resource
    Analysis of epitaxial GaxIn1−xAs/InP and AlyIn1−yAs/InP interface region by high resolution x-ray diffraction (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 149-151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed strain analysis of high resolution x-ray diffraction patterns taken from GaxIn1−xAs and AlyIn1−yAs layers grown lattice matched on (001) InP substrates shows the existence of distinct interface regions. Our dynamical diffraction model allows us to detect buried interface layers with submonolayer resolution and differences in composition of less than 1% from the rest of the epilayer. Comparison between experimental and theoretical rocking curves reveals that the interface region between epilayer and substrate comprises 2 monolayers InAs plus GaxIn1−xAs (or AlyIn1−yAs) interlayer with different group III element ratios.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109354
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