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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1311-1314 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the InAlAs/InGaAs modulation-doped structure, passivated with a SiN film, was investigated. In contrast to the capless sample, the passivated modulation-doped sample exhibited negligible degradation in the two-dimensional electron gas concentration (NS) after annealing at 280 °C, indicating that SiN is an efficient passivation material to ensure good thermal stability for the InAlAs/InGaAs modulation-doped structure. In addition, partial recovery in NS was found by annealing the SiN-passivated sample that had experienced serious NS degradation. A series of secondary ion mass spectroscopy (SIMS) measurements and Hall effect measurements revealed that the recovery of NS is associated with the discharge of fluorine atoms from the Si-doped n-type InAlAs layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 84 (1977), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The levels of human placental lactogen (HPL) in the serum of expectant mothers both subjected to and not subjected to aircraft noise were measured. The HPL levels in the quiet reference area and in the noise area were similar before the 29th week of pregnancy. However, the HPL levels of subjects in the noise area tended to be lower than those in the reference area after the 30th week of pregnancy and the difference became significant after the 36th week of pregnancy. The lower HPL levels were associated with lower birth weight for infants of mothers who lived in the noise area.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5206-5208 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The local electrical properties were measured simultaneously with the topography for a Ta(50 Å)/Fe20Ni80(50 Å)/IrMn(150 Å)/Co(50 Å)/Al(13 Å)-oxide junction. The electrical image showed the contrast with around a few nm lateral size and a strong correlation with the topographical image was not observed. In the local current–voltage characteristics, data within the bias voltage of ±1.5 V were fitted well to Simmon's equation and we obtained the barrier height Φ=1.9 eV and the thickness d=12 Å. On the other hand, data with the bias voltages higher than 3 V were fitted well to Fowler–Nordheim equation. The histogram of current density was calculated by taking into consideration a Gaussian distribution of the barrier thickness and the height. The distribution of the barrier height can explain the experimental result realistically. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5209-5211 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inelastic-electron-tunneling spectroscopy (IETS) has been applied to investigate the spin dependent tunneling process for a Ta(50 Å)/Fe20Ni80(60 Å)/IrMn(300 Å)/Co(60 Å)/Al(13 Å)-oxide/ Co(40 Å)/Fe20Ni80(200 Å) spin-valve-type tunnel junction. IET spectra for both parallel and antiparallel magnetization configurations of ferromagnetic electrodes showed a strong peak at 12 mV. The subtraction spectrum defined by the difference between the spectra of both the configurations was calculated. Spin-independent inelastic excitation processes are not affected by an external magnetic field, and thus, the subtraction spectrum indicates the inelastic modes induced only by the magnetic origin. It showed a strong peak at 12 and 20 mV for the positively and negatively biased direction of the bottom electrode, respectively. The tendency of the tunneling magnetoresistance ratio to decrease with bias voltage agreed with the shape of the subtraction spectrum. By assuming the surface magnon excitation, we obtained the distributions of the correlation length and the Curie temperature for both ferromagnetic electrode surfaces faced on the insulator. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1023-1028 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Large area ion sources have been used in ion doping systems in the field of LCD production. In these ion sources good uniformity and wide dynamic range in beam current are both required to achieve the good dose uniformity in wide dose range. A new ion source which uses dc arc discharge with three filaments, each of which is controlled individually, is now in the production lines instead of the conventional rf discharge type. Better than 5% of beam uniformity across 600 mm is achieved by an automated feedback control using beam profile data taken by a built-in beam profiler in less than 10 s from arc ignition. Another emerging requirement is high beam purity, for the ion beams from these ion sources are used without mass analysis. The hydrogen ion fraction was successfully reduced by magnetically retarding the hydrogen ions to less than 5%. A large area ion source having a newly designed mass separating structure is developed. The structure is comprised of a permanent magnet array and a beamlet scanner just after the multiple-slot beam extraction electrode system. All the unwanted ion species in the beam can be eliminated to a good level. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3456-3458 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Initial ac susceptibility χ was examined in the temperature range from 4.2 K to Curie temperatures for polycrystalline Fe100−xNix (20≤x≤50) alloys. The reentrant spin glass is found in x=30–45 alloys. The dependence of the freezing temperature Tg on the intensity of driving magnetic field (ac: 0–0.26 Oe; dc: 0–10 Oe) and on the frequency (140–9200 Hz) was studied for the Fe65Ni35 alloy. A strong magnetic relaxation is observed below Tg. These results are discussed based on the cluster model.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3743-3745 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Considerable relaxation of the high internal stresses which arise in HfN thin films during their deposition by a sputtering method has been accomplished through bombarding the films with energetic silicon ions. The internal stresses have been estimated from the measurements of the surface curvature. Our results indicate a relaxation of the internal compressive stresses in the films, which occurs via a transport of the interstitial defects within the thermal spikes created by a post-deposition energetic ion bombardment. The mechanical properties of HfN films before and after the treatment have been studied by depth-sensing indentation technique while the structural analysis has been made using x-ray diffraction, Rutherford backscattering, and Auger electron spectroscopy. Ion bombardment did not affect resistivity of the thin films while improving their plastic properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background  Topical immunotherapy with a contact allergen is effective in alopecia areata (AA). However, the mechanism of the effect is still unknown, and pretreatment prediction of the outcome of therapy in each patient remains difficult. Objectives  To predict the clinical effect of this therapy in AA patients, we investigated the relationship between clinical responses to topical immunotherapy and in vitro proliferative responses of peripheral blood mononuclear cells (PBMC) to T-cell stimulants. Methods  PBMC were taken from 67 AA patients before or during diphenylcyclopropenone immunotherapy and from 14 healthy controls, and proliferative responses to phytohaemagglutinin and staphylococcal enterotoxin B were evaluated by measuring [3H]-thymidine incorporation. Results  PBMC from the AA patients with a good clinical response to immunotherapy showed a normal level of proliferation, whereas PBMC from the poor responders showed a markedly suppressed proliferative response and interleukin (IL)-2 production, but increased IL-4 production compared with the controls. Conclusions  The proliferative response of PBMC to T-cell stimulants may be one of the indicators of the clinical effect of topical immunotherapy for AA.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physiology 56 (1994), S. 711-739 
    ISSN: 0066-4278
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Biology
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1440-1797
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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