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  • 1
    Electronic Resource
    Electronic Resource
    Corticotrophin-releasing hormone and corticotrophin- releasing hormone binding protein in normal and pre-eclamptic human pregnancies (1995)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 102 (1995), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objective To measure the plasma levels of corticotrophin-releasing hormone and corticotrophin-releasing hormone binding protein in normal pregnancy and in pregnancies complicated by pre-eclampsia.Setting John Radcliffe Hospital, Oxford and St Thomas's Hospital, London.Subjects One hundred and twenty pregnant women sampled prospectively throughout gestation, of whom 91 experienced a normal pregnancy and eight developed pre-eclampsia; in a second study, 10 women with severe pre-eclampsia, presenting at a range of gestational ages, were sampled once and compared with appropriately matched normal pregnant women.Main outcome measure Plasma levels of corticotrophin-releasing hormone determined by immunoradiometric assay. Plasma levels of corticotrophin-releasing hormone binding protein measured by direct radioimmunoassay.Results In the prospective study, plasma samples from women with pre-eclampsia exhibited higher (390.2 versus 292.7 pmol/l at 36 weeks) levels of corticotrophin-releasing hormone and significantly lower (5.24 versus 8.14 nmol/l at 36 weeks, P 0.002) levels of corticotrophin-releasing hormone binding protein than normal controls. In the second, single time point study a significant elevation in CRH (P 〈 0.002) and reduction in CRH-BP (P 〈 0.001) was found in pre-eclamptic pregnancies compared with controls.Conclusions In human pregnancies complicated by pre-eclampsia there is an elevated level of corticotrophin releasing hormone whilst there is less corticotrophin-releasing hormone binding protein; therefore there is a net increase in free potentially bioactive hormone which may play a role in the pathology of the disease.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1995.tb09063.x
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  • 2
    Electronic Resource
    Electronic Resource
    Germicides for Army Mobile Laundries (1948)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 40 (1948), S. 2054-2059 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50467a010
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  • 3
    Electronic Resource
    Electronic Resource
    New Developments in Army Sea Water Laundering (1949)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 41 (1949), S. 112-119 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50469a028
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  • 4
    Electronic Resource
    Electronic Resource
    A HIGH TEMPERATURE SUPERPHOSPHORIC ACID PLANT (1967)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 59 (1967), S. 18-28 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50690a007
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  • 5
    Electronic Resource
    Electronic Resource
    Defect clusters in zinc oxide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6760-6763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present new evidence that two electron traps observed in polycrystalline zinc oxide can be associated with complex intrinsic defects. One deep level, E1, can be assigned to an oxygen vacancy. The second deep level, E2, could consist of a cluster-type defect associated with oxygen vacancies. The two traps were characterized using deep-level transient spectroscopy. The energies of these traps are 0.15 and 0.24 eV, the capture cross sections are 4×10−18 and 1×10−17 cm2, and the emission rates at 300 K are 2.0×106 and 1.3×105 Hz, respectively. The relative concentrations of these traps varied uniformly as a function of the cooling rate of the zinc oxide from a sintering temperature of 1300 °C. The concentration of E1 decreased, while the concentration of E2 increased, with decreasing cooling rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345114
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of deep levels in zinc oxide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1781-1783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron trap of 0.3 eV depth was characterized in hydrothermally grown, single-crystal zinc oxide using deep-level transient spectroscopy. Specimens were fabricated with Ag Schottky contacts on (0001) surfaces. The capture cross section was determined to be 2.6×10−14 cm2. The defect is a native donor and is attributed to a singly ionized oxygen vacancy V•O.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339919
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  • 7
    Electronic Resource
    Electronic Resource
    Measurement of deflection-mode damping in an accelerating structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6257-6260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly measured the damping of wake-field deflection modes in a slow-wave accelerating structure consisting of a dielectric-lined waveguide with segmented conducting boundaries wrapped with rf absorbing material. Such damping of deflection modes is desired to prevent beam breakup instabilities. Attenuation e-folding times of 246 ps were recorded for deflection modes at the Advanced Accelerator Test Facility while the quality of the desired accelerating mode remained unaffected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348823
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  • 8
    Electronic Resource
    Electronic Resource
    Electrochemical capacitance-voltage profiling of n-type ZnSe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5311-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we report the first detailed study of electrochemical capacitance-voltage profiling of ZnSe. An electrolyte consisting of 1 M sodium hydroxide and 1 M sodium sulphite has been developed that does not deposit selenium while etching the surface of n-type ZnSe during C-V profiling. The dissolution number of the electrolyte/ZnSe system is a function of the strength of electrolyte and the etching current and in order to obtain an accurate etching depth a constant etching current mode was used. A wide range of doping concentrations including both uniformly doped and staircase structures have been measured demonstrating that the electrochemical C-V profiler can now be a routine tool for assessing the growth parameters of ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352016
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  • 9
    Electronic Resource
    Electronic Resource
    Laser ablation of ZnSe using pulsed 193-nm irradiation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2001-2008 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma jets have been produced by the pulsed laser ablation of bulk ZnSe targets. Electrical measurements show that a sudden increase in ion yield occurs at a threshold pulse energy density of 210 mJ cm−2 pulse−1. The plasmas obtained do not exhibit overall electrical neutrality, but have a net positive charge, while the ZnSe target develops a corresponding negative charge. The initial ion translational kinetic energies are also found to be very low, 〈1 eV. These observations suggest that the ablation process is the result of a buildup of photogenerated holes at the semiconductor surface sufficient to result in disintegration of the lattice and rapid vaporization at low thermal energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349485
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  • 10
    Electronic Resource
    Electronic Resource
    Photocapacitance and photoconductance of Bi-doped ZnO (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4011-4016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of occupied interface states as a function of energy in nonohmic polycrystalline Bi-doped ZnO was obtained using photocapacitance measurements. Peaks in the interface states' densities were observed at depths of 2.46 and 2.79±0.08 eV from the bottom of the conduction band. The combination of these two states was found in photoconductance measurements on Bi-doped samples of ZnO and not found in undoped samples; thus, these states were assumed to be related to interface states that arise from doping with Bi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348435
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