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  • 1
    Electronic Resource
    Electronic Resource
    The properties of Y1Ba2Cu3O7−δ thin films with silver doping prepared by spray pyrolysis (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6946-6952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting, silver-doped films of Y1Ba2Cu3O7−δ have been deposited by spray pyrolysis of aqueous nitrate solutions onto MgO substrates. The superconducting transport properties, microstructure, and microwave losses have been characterized for various amounts of AgNO3 added to the spraying solution. These films had resistive transition temperatures between 79 and 85 K with widths from 3 to 7 K. The room-temperature resistivity was a strong function of the silver doping, dropping by a factor of 50 for the heavily doped films. Critical current densities at 4 K were typically several 103 A/cm2 with little correlation to the silver doping. Lattice constants also were not significantly affected by the silver doping level, however, lightly doped films were denser, had the strongest c axis preferred orientation, and a smoother surface. Rf surface resistance was measured at 18 GHz, and for the best films dropped a factor of 10 below copper by 40 K. The London penetration depth was estimated to be approximately 1 μm for the best films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345038
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  • 2
    Electronic Resource
    Electronic Resource
    Light detection using high-Tc microstrip transmission lines as a probe of film homogeneity (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4995-4999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of light on high-temperature superconductor microstrip transmission lines under conditions for which a bolometric photoresponse is expected. We illustrate the pitfall of comparing a spatially local property (such as microwave detected photoresponse) and a global property (such as microwave transmission), and then drawing conclusions regarding the bolometric character of the photoresponse. For low microwave powers, the photoresponse, measured as function of the position of the spot illuminated, provides a measurement of the spatial inhomogeneity of the microwave properties of the film. For microwave powers large enough to depress the critical temperature, such measurements provide information about standing waves in the microstrip.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349002
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  • 3
    Electronic Resource
    Electronic Resource
    LV.—ON A SOLUBLE COMPOUND OF HYDRASTINE WITH MONOCALCIUM PHOSPHATE. (1897)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 19 (1897), S. 838-840 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja02084a017
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  • 4
    Electronic Resource
    Electronic Resource
    Proton radiation effects in microwave cavities and ring resonators fabricated from YBa2Cu3O7−δ (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1563-1565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first radiation effects study on a superconducting ring resonator made from thin-film YBa2Cu3O7−δ. Exposure to 2 MeV protons causes the superconducting transition temperature Tc to decrease predictably with fluence. For temperatures below about 0.9Tc , there is no significant change in the transmission coefficient, the center frequency, or the quality factor Q of the resonator, even for doses in excess of 4×1016 protons/cm2 (∼0.04 displacements per film atom). Similarly, the low-temperature surface resistance Rs of an unpatterned film does not change with irradiation. We show that this insensitivity to radiation is not predicted by standard theory, and that the dominant part of Rs at low temperature is the residual resistance R0. Thus any viable theory describing the origin of R0 must, as a criterion, explain the origin of its insensitivity to large irradiation doses. This criterion is used to evaluate theories ascribing R0 to weak links, flux pinning, impurities, and lattice imperfections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105178
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic properties of symmetric and asymmetric quantum-well electron barrier diodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 706-710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum-well electron barrier diode is a device whose current-voltage characteristic originates in the symmetry of the ground-state energies present in a sequence of quantum wells. In this paper, current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the quantum-well electron barrier diode are presented for a number of symmetric and asymmetric configurations fabricated from samples grown by molecular-beam epitaxy. The data demonstrate that the symmetry of the quantum wells determines the symmetry of the I-V characteristic. The effect of doping on the C-V characteristic is also examined. It is shown how the effect of doping can be understood via a solution of Poisson's equation at zero bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339746
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  • 6
    Electronic Resource
    Electronic Resource
    Minimization of the noise temperature of the free-electron bolometer mixer (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1715-1718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The principal factors which limit the bandwidth and noise temperature of the free-electron bolometer mixer have been calculated. The minimum mixer contribution to the effective noise temperature is found to be 33Tlattice under the conditions of rf match, IF match, and constant current bias. This result is independent of the electron-lattice energy relaxation time, and can be achieved without significantly degrading the information bandwidth. The best experimental values from the literature are found to be near this predicted performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336018
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  • 7
    Electronic Resource
    Electronic Resource
    Microwave surface resistance of bulk Tl-Ba-Ca-Cu-O superconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 389-390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first measurements of the microwave surface resistance at 18 GHz of bulk Tl-Ba-Ca-Cu-O superconductors produced by the hot isostatic pressing (HIP) process are reported. The superconducting samples, prepared by solid-state reaction with subsequent sintering and consolidation to obtain ideal density, were measured by replacing the end wall of a TE011 circular mode gold-plated copper cavity with the sample and determining the cavity Q for the temperature range 4–300 K. Results indicated that HIP samples which underwent subsequent annealing exhibit, below the critical temperature, a surface resistance approaching an order of magnitude less than copper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100972
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  • 8
    Electronic Resource
    Electronic Resource
    Barium–strontium–titanate thin films for application in radio-frequency-microelectromechanical capacitive switches (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1255-1257 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the application of barium–strontium–titanate (BST) thin film oxides as the dielectric layer in radio-frequency-microelectromechanical system (rf-MEMS) capacitive switches. BST thin films deposited at ambient temperature by off-axis sputtering have been employed for application in rf-MEMS switches. Their dielectric properties have been characterized in the frequency range from 1 to 20 GHz both on magnesium oxide and on gold metal films. Switches have been fabricated which demonstrate promising on-state capacitance and good dielectric breakdown properties. Dielectric breakdown in excess of 400 kV/cm has been measured on switches cycled in excess of 2000 times during testing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450263
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  • 9
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of double-sided YBa2Cu3O7 thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1682-1684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of YBa2Cu3O7−δ were deposited on both sides of (100) LaAlO3 substrates by metalorganic chemical vapor deposition. Using a gold-coated wafer carrier, improvements in both the transition temperature and critical current density of the film exposed to the carrier (first side) were demonstrated. Tc's of 86–88 K and Jc's≥106 A/cm2 at 77 K were achieved. The microwave surface resistance of both sides of double-sided samples measured at 77 K was approximately 8 mΩ at 36 GHz, scaling to less than 700 μΩ at 10 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109575
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  • 10
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of low microwave surface resistance YBa2Cu3O7 on (100) LaAlO3 and (100) SrTiO3 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2926-2928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of YBa2Cu3O7−δ on (100) LaAlO3 and (100) SrTiO3, up to 5000 A(ring) thick, were grown by metalorganic chemical vapor deposition. The as-deposited films were c-axis oriented, and had transition temperatures between 87 and 89 K, transition widths less than or equal to 1 K, and critical current densities of 1–3×106 A/cm2 at 77 K. Microwave surface resistance measurements at 36 GHz on (100) LaAlO3 showed significant improvements over copper metal at 77 K. Films grown on (100) SrTiO3 exhibited slightly better properties than those grown on (100) LaAlO3. Films which were slightly deficient in barium and rich in yttrium consistently demonstrated superior properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106822
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